SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) • Lower Susceptibility to ESD Damage Description and Applications MA4E2502 Series V5 The MA4E2502 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder. Case Style 1246 The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300 °C. A B C D E Inches Dim D Millimeters A Min. 0.0445 Max. 0.0465 Min. 1.130 Max. 1.180 B 0.0169 0.0189 0.430 0.480 C 0.0040 0.0080 0.102 0.203 D Sq. 0.0128 0.0148 0.325 0.375 E 0.0128 0.0148 0.325 0.375 The “ 0502 ” outline allows for Surface Mount placement and multi-functional polarity orientations. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes MA4E2502 Series V5 Electrical Specifications @ 25 °C Model Number Type Recommended Frequency Range Vf @ 1 mA ( mV ) Vb @ 10 uA (V) Ct @ 0V ( pF ) Rt Slope Resistance ( Vf1 - Vf2 )/(10.5mA-9.5mA ) (Ω) MA4E2502L Low Barrier DC - 18 GHz 330 Max 300 Typ 3 Min 5 Typ 0.12 Max 0.10 Typ 16 Typ 20 Max MA4E2502M Medium Barrier DC - 18 GHz 470 Max 420 Typ 3 Min 5 Typ 0.12 Max 0.10 Typ 12 Typ 18 Max MA4E2502H High Barrier DC - 18 GHz 700 Max 650 Typ 3 Min 5 Typ 0.12 Max 0.10 Typ 11 Typ 15 Max Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) Handling Die Bonding All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The devices are well suited for high temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable for usage. Die attach with Electrically Conductive Silver Epoxy is Not Recommended. The rugged construction of these SurMount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized. Absolute Maximum Ratings @ 25 °C (Unless Otherwise Noted) 1 Parameter Absolute Maximum Operating Temperature -40 °C to +125 °C Storage Temperature -40 °C to +150 °C Junction Temperature +175 °C Forward Current 20 mA Reverse Voltage 5V RF C.W. Incident Power + 20 dBm RF & DC Dissipated Power 50 mW For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying Equal heat to the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed. 1. Operation of this device above any one of these parameters may cause permanent damage. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes MA4E2502 Series V5 MA4E2502L Low Barrier SPICE PARAMETERS Is (nA) 26 Rs (Ω) 12.8 N 1.20 Cj0 ( pF ) M 1.0 E-2 0.5 Ik Cjpar Vj (mA) (pF) (V) FC BV (V) IBV 14 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2 FC BV (V) (mA) (mA) MA4E2502M Medium Barrier SPICE PARAMETERS Is (nA) 5 E-1 Rs (Ω) 9.6 N 1.20 Cj0 ( pF ) M 1.0 E-02 0.5 Ik Cjpar Vj (mA) (pF) (V) IBV 10 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2 FC BV (V) (mA) 5.0 1.0 E-2 MA4E2502H High Barrier SPICE PARAMETERS Is (nA) 5.7 E-1 Rs (Ω) 6.5 N 1.20 Cj0 ( pF ) M 1.0 E-02 0.5 Ik Cjpar Vj (mA) (pF) (V) 4 9.0 E-2 8.0 E-2 0.5 IBV Circuit Mounting Dimensions (Inches) 0.020 0.020 0.020 0.020 0.013 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes MA4E2502 Series V5 Ordering Information Part Number Package MA4E2502L-1246W Wafer on Frame MA4E2502L-1246 Die in Carrier MA4E2502L-1246T Tape/Reel MA4E2502M-1246W Wafer on Frame MA4E2502M-1246 Die in Carrier MA4E2502M-1246T Tape/Reel MA4E2502H-1246W Wafer on Frame MA4E2502H-1246 Die in Carrier MA4E2502H-1246T Tape/Reel MA4E2502 Diode Schematic Ct Ls Rs Rj Schematic Values Model Number Ls (nH) Rs Rj (Ω) (Ω) Ct (pF) MA4E2502L 0.8 12.8 26 / Idc (mA) 0.10 MA4E2502M 0.8 9.6 26 / Idc (mA) 0.10 MA4E2502H 0.8 6.5 26 / Idc (mA) 0.10 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.