MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection These are Pb−Free and Halide−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERE 100 VOLTS Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal SMA−FL CASE 403AA STYLE 6 Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • MARKING DIAGRAM 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B AYWW RAAG G RAA = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF2H100G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 Publication Order Number: MBRAF2H100/D MBRAF2H100T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 140°C) Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 4.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 145°C IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C 130 A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL TBD °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA TBD °C/W TJ = 25°C TJ = 125°C Unit 0.79 0.65 0.050 9.0 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Value Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3) (iF = 2.0 A) vF Maximum Instantaneous Reverse Current (Note 3) (VR = 100 V) IR 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 V mA MBRAF2H100T3G TYPICAL CHARACTERISTICS 100 150°C 25°C 125°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 1.1 150°C 25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 IR, REVERSE CURRENT (mA) 150°C 1 125°C 0.1 0.01 0.001 25°C 0.0001 0 10 20 30 40 50 60 70 80 90 100 150°C 1 125°C 0.1 0.01 25°C 0.001 0 10 20 VR, REVERSE VOLTAGE (V) 30 400 TJ = 25°C f = 1 MHz 350 300 250 200 150 100 50 0 10 20 50 60 70 80 Figure 4. Maximum Reverse Current 450 0 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current C, CAPACITANCE (pF) IR, REVERSE CURRENT (mA) 125°C 0.1 1.2 10 0.00001 10 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance http://onsemi.com 3 90 100 90 100 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) MBRAF2H100T3G 100 10 1 50% Duty Cycle 10% 20% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 6. Typical Transient Thermal Response, Junction−to−Ambient http://onsemi.com 4 100 1000 MBRAF2H100T3G PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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