FGP15N60UNDF tm 600V, 15A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Air Condtioner, Washing Machine, Refrigerator, Dish Washer Features • Industrial Inverter - Sewing Machine, CNC • Short circuit rated 10us • High current capability • High input impedance General Description • Fast switching • RoHS compliant Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential. C G C E G TO-220 E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC Ratings Units 600 V ± 20 V Collector Current @ TC = 25oC 30 A Collector Current @ TC = 100oC 15 A A o ICM (1) Pulsed Collector Current @ TC = 25 C 45 IF Diode Forward Current @ TC = 25oC 15 A W PD o Maximum Power Dissipation @ TC = 25 C 178 Maximum Power Dissipation @ TC = 100oC 71 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o C C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.2, VGE=13.5V Thermal Characteristics Max. Units RθJC(IGBT) Symbol Thermal Resistance, Junction to Case Parameter 0.7 oC/W RθJC(Diode) Thermal Resistance, Junction to Case 2.3 o RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 62.5 o ©2011 Fairchild Semiconductor Corporation FGP15N60UNDF Rev. A Typ. 1 C/W C/W www.fairchildsemi.com FGP15N60UNDF 600V, 15A Short Circuit Rated December 2011 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGP15N60UNDF FGP15N60UNDF TO220 Tube 50ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250µA 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 µA IC = 15mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 5.5 6.8 8.5 V IC = 15A, VGE = 15V - 2.2 2.7 V IC = 15A, VGE = 15V, TC = 125oC - 2.7 - V - 619 - pF - 80 - pF - 24 - pF - 9.3 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 9.8 - ns td(off) Turn-Off Delay Time - 54.8 - ns tf Fall Time - 9.9 12.8 ns Eon Turn-On Switching Loss - 0.37 - mJ Eoff Turn-Off Switching Loss - 0.067 - mJ Ets Total Switching Loss - 0.44 - mJ td(on) Turn-On Delay Time - 8.9 - ns tr Rise Time - 9.9 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Tsc Short Circuit Withstand Time FGP15N60UNDF Rev. A VCC = 400V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 - 56.6 - ns - 13.2 - ns - 0.54 - mJ - 0.11 - mJ - 0.65 - mJ 10 - - µs www.fairchildsemi.com FGP15N60UNDF 600V, 15A Short Circuit Rated Package Marking and Ordering Information Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 15A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 15A - nC 6 - nC - 26 - nC Min. Typ. Max TC = 25oC - 1.6 2.2 TC= 125oC - 1.5 - TC = 25oC - 82.4 TC= 125 C - 142 - TC = 25oC - 213 - - 541 - o Diode Reverse Recovery Charge FGP15N60UNDF Rev. A 43 TC = 25°C unless otherwise noted IF =15A, dIF/dt = 200A/µs Qrr - TC= 3 125oC Units V ns nC www.fairchildsemi.com FGP15N60UNDF 600V, 15A Short Circuit Rated Electrical Characteristics of the IGBT FGP15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics Figure 1. Typical Output Characteristics 80 o TC = 25 C 20V 80 17V 60 50 VGE = 12V 40 30 20 10 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 17V 15V 60 50 VGE = 12V 40 30 20 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 Figure 4. Transfer Characteristics 80 80 70 Common Emitter VGE = 15V 60 TC = 25 C Common Emitter 70 VCE = 20V o TC = 25 C o Collector Current, IC [A] Collector Current, IC [A] 20V 10 0 0.0 o TC = 125 C 50 40 30 20 10 60 o TC = 125 C 50 40 30 20 10 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 4.0 30A 3.5 3.0 15A 2.5 2.0 IC = 7.5A 1.5 1.0 25 3 6 9 12 Gate-Emitter Voltage,VGE [V] 4 Common Emitter o TC = 25 C 16 12 8 15A 30A 4 IC = 7.5A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGP15N60UNDF Rev. A 15 Figure 6. Saturation Voltage vs. VGE 4.5 Collector-Emitter Voltage, VCE [V] o TC = 125 C 70 15V Collector Current, IC [A] Collector Current, IC [A] 70 Figure 2. Typical Output Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com Figure 7. Saturation Voltage vs. VGE 20 Figure 8. Capacitance Characteristics 3000 Common Emitter Collector-Emitter Voltage, VCE [V] o TC = 25 C Cies 1000 Coes Capacitance [pF] 16 12 8 15A Cres 100 Common Emitter VGE = 0V, f = 1MHz 30A 4 IC = 7.5A 0 4 o TC = 25 C 8 12 16 Gate-Emitter Voltage, VGE [V] 10 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 100 15 10µs 12 400V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 200V VCC = 100V 9 6 3 10 100µs 1ms 1 10 ms Common Emitter o TC = 25 C 0.01 0 0 5 10 15 20 25 30 35 Gate Charge, Qg [nC] 40 45 1 50 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 50 Common Emitter VCC = 400V, VGE = 15V IC = 15A 40 30 o Switching Time [ns] Switching Time [ns] DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 20 tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 15A TC = 25 C td(off) o TC = 125 C 100 tf o TC = 25 C 10 o TC = 125 C 5 0 10 20 30 40 Gate Resistance, RG [Ω ] FGP15N60UNDF Rev. A 50 0 60 10 20 30 40 50 60 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGP15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 50 300 Common Emitter VGE = 15V, RG = 10Ω o 10 td(on) Common Emitter VGE = 15V, RG = 10Ω tr 100 Switching Time [ns] Switching Time [ns] TC = 25 C o o TC = 125 C td(off) tf TC = 25 C 10 o TC = 125 C 1 0 5 10 15 20 25 30 5 35 0 5 Collector Current, IC [A] 10 15 20 25 30 Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 3000 Eon Eon Switching Loss [uJ] Switching Loss [µJ] 1000 Eoff 100 Common Emitter VCC = 400V, VGE = 15V IC = 15A Eoff 100 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 25 C o TC = 125 C 10 o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 0 5 10 15 20 25 30 35 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 100 30 Forward Current, IF [A] Collector Current, IC [A] 35 Collector Current, IC [A] 10 10 o o TJ = 125 C TJ = 75 C o TJ = 25 C Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 1 1000 0 Collector-Emitter Voltage, VCE [V] FGP15N60UNDF Rev. A 6 1 2 Forward Voltage, VF [V] 3 www.fairchildsemi.com FGP15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 100 0.7 o TC = 25 C o Stored Recovery charge, Qrr [ns] TJ = 125 C Reverse Current , IR [µA] 10 1 o TJ = 75 C 0.1 o 0.01 TJ = 25 C 1E-3 50 200 400 Reverse Voltage, VR [V] 0.6 TC = 125oC 200A/µs 0.5 0.4 0.3 di/dt = 100A/µs 0.2 200A/µs 0.1 di/dt = 100A/µs 0.0 600 0 2 4 6 8 10 12 14 16 18 20 Forward Current, IF [A] Figure 21. Reverse Recovery Time 200 Stored Recovery Charge, trr [nC] o TC = 25 C di/dt = 100A/µs o TC = 125 C 150 200A/µs di/dt = 100A/µs 100 200A/µs 50 0 0 2 4 6 8 10 12 14 16 18 20 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGP15N60UNDF Rev. A 7 www.fairchildsemi.com FGP15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics FGP15N60UNDF 600V, 15A Short Circuit Rated Mechanical Dimensions TO-220 FGP15N60UNDF Rev. A 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I58 FGP15N60UNDF Rev. 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