TC74HCT138AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HCT138AP,TC74HCT138AF
3-to-8 Line Decoder
The TC74HCT138A is a high speed CMOS 3-to-8 LINE
DECODER fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
When the device is enabled, 3 Binary Select inputs (A, B and
C) determine which one of the outputs ( Y0 - Y7 ) will go low.
When enable input G1 is held low or either G2A or G2B is
held high, decoding function is inhibited and all outputs go high.
G1, G2A , and G2B inputs are provided to ease cascade
connection and for use as an address decoder for memory
systems.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HCT138AP
TC74HCT138AF
Features
•
High speed: tpd = 17 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
•
Compatible with TTL outputs: VIH = 2 V (min)
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
VIL = 0.8 V (max)
•
Wide interfacing ability: LSTTL, NMOS, CMOS
•
Output drive capability: 10 LSTTL loads
•
•
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
∼ tpHL
Balanced propagation delays: tpLH −
•
Pin and function compatible with 74LS138
: 1.00 g (typ.)
: 0.18 g (typ.)
Pin Assignment
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TC74HCT138AP/AF
IEC Logic Symbol
Truth Table
Inputs
Outputs
Enable
Select
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Selected
Output
G1
G2 A
G 2B
C
B
A
L
X
X
X
X
X
H
H
H
H
H
H
H
H
None
X
H
X
X
X
X
H
H
H
H
H
H
H
H
None
X
X
H
X
X
X
H
H
H
H
H
H
H
H
None
H
L
L
L
L
L
L
H
H
H
H
H
H
H
Y0
H
L
L
L
L
H
H
L
H
H
H
H
H
H
Y1
H
L
L
L
H
L
H
H
L
H
H
H
H
H
Y2
H
L
L
L
H
H
H
H
H
L
H
H
H
H
Y3
H
L
L
H
L
L
H
H
H
H
L
H
H
H
Y4
H
L
L
H
L
H
H
H
H
H
H
L
H
H
Y5
H
L
L
H
H
L
H
H
H
H
H
H
L
H
Y6
H
L
L
H
H
H
H
H
H
H
H
H
H
L
Y7
X: Don’t care
Logic Diagram
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TC74HCT138AP/AF
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5~7.0
V
DC input voltage
VIN
−0.5~VCC + 0.5
V
DC output voltage
VOUT
−0.5~VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
−65~150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Supply voltage
VCC
4.5~5.5
V
Input voltage
VIN
0~VCC
V
VOUT
0~VCC
V
Operating temperature
Topr
−40~85
°C
Input rise and fall time
tr, tf
0~500
ns
Output voltage
Note:
Unit
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Ta = 25°C
Test Condition
Ta = −40~85°C
VCC (V)
Min
Typ.
Max
Min
Max
Unit
High-level input
voltage
VIH
⎯
4.5~5.5
2.0
⎯
⎯
2.0
⎯
V
Low-level input
voltage
VIL
⎯
4.5~5.5
⎯
⎯
0.8
⎯
0.8
V
High-level output
voltage
VOH
IOH = −20 μA
VIN
= VIH or VIL I
OH = −4 mA
4.5
4.4
4.5
⎯
4.4
⎯
4.5
4.18
4.31
⎯
4.13
⎯
Low-level output
voltage
VOL
IOL = 20 μA
VIN
= VIH or VIL I = 4 mA
OL
4.5
⎯
0.0
0.1
⎯
0.1
4.5
⎯
0.17
0.26
⎯
0.33
VIN = VCC or GND
5.5
⎯
⎯
±0.1
⎯
±1.0
μA
ICC
VIN = VCC or GND
5.5
⎯
⎯
4.0
⎯
40.0
μA
IC
Per input:
VIN = 0.5 V or 2.4 V
5.5
⎯
⎯
2.0
⎯
2.9
mA
Input leakage
current
Quiescent supply
current
IIN
V
V
Other input: VCC or GND
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TC74HCT138AP/AF
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
4
8
ns
⎯
⎯
17
28
ns
⎯
⎯
15
25
ns
⎯
⎯
17
28
ns
tTLH
Output transition time
tTHL
Propagation delay time
tpLH
(A, B, C- Y )
tpHL
Propagation delay time
tpLH
(G1- Y )
tpHL
Propagation delay time
tpLH
( G2 - Y )
tpHL
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Output transition time
Symbol
tTLH
tTHL
Propagation delay
time
tpLH
(A, B, C- Y )
tpHL
Propagation delay
time
tpLH
(G1- Y )
tpHL
Propagation delay
time
tpLH
( G2 - Y )
tpHL
Input capacitance
CIN
Power dissipation
capacitance
CPD
Note:
(Note)
Ta = 25°C
Test Condition
Ta = −40~85°C
Unit
VCC (V)
Min
Typ.
Max
Min
Max
4.5
⎯
8
15
⎯
19
5.5
⎯
7
14
⎯
18
4.5
⎯
21
33
⎯
44
5.5
⎯
18
30
⎯
40
4.5
⎯
19
30
⎯
38
5.5
⎯
17
27
⎯
34
4.5
⎯
22
33
⎯
41
5.5
⎯
20
30
⎯
37
⎯
⎯
5
10
⎯
10
pF
⎯
⎯
55
⎯
⎯
⎯
pF
⎯
⎯
⎯
⎯
ns
ns
ns
ns
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC
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TC74HCT138AP/AF
Package Dimensions
Weight: 1.00 g (typ.)
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TC74HCT138AP/AF
Package Dimensions
Weight: 0.18 g (typ.)
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TC74HCT138AP/AF
RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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