Unitpower UN3002N3 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The UN3002N3 UN3002N3 is is the the highest highest performance performance The BVDSS trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . RDSON ID 18m 30V 28A Applications The UN3002N3 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch Advanced high cell density Trench technology DFN3X3 Pin Configuration Super Low Gate Charge D Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available S SSG Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Sou ce Voltage ID@TC=25 ID@TC=100 ID@TA=25 ID@TA=70 IDM 10s Steady State 30 Units V V 20 1 28 A 1 18 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 11.8 1 9.5 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current2 3 7.5 A 6 A 65 A EAS Single Pulse Avalanche Energy 72 mJ IAS Avalanche Current 20 A 20.8 W PD@TC=25 PD@TA=25 4 Total Power Dissipation 4 Total Power Dissipation 4.2 1.67 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 W Thermal Data Symbol R R R JA JA JC Parameter Typ. Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Ambient 1 (t 10s) Thermal Resistance Junction-Case 1 Max. Unit --- 75 /W --- 30 /W --- 6 /W Rev A.02 D070711 1 Unitpower UN3002N3 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol BVDSS BVDSS RDS(ON) VGS(th) , unless otherwise noted) Parameter Conditions Drain-Source Breakdown Voltage TJ BVDSS Temperature Coefficient Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 30 --- --- V --- 0.022 --- VGS=10V , ID=15A --- 14.5 18 VGS=4.5V , ID=10A --- 20 26 1.2 1.5 2.5 V --- -3.92 --- mV/ VDS=24V , VGS=0V , TJ=25 --- --- 1 VDS=24V , VGS=0V , TJ=55 --- --- 5 --- --- 100 nA S VGS=0V , ID=250uA Reference to 25 , ID=1mA VGS=VDS , ID =250uA VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS gfs Forward Transconductance VDS=5V , ID=15A --- 22 --- Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.04 2.1 Qg Total Gate Charge (4.5V) --- 6.1 8.5 Qgs Gate-Source Charge --- 2 2.8 Qgd Gate-Drain Charge --- 2 2.8 Td(on) 20V , VDS=0V VDS=15V , VGS=4.5V , ID=15A Turn-On Delay Time V/ m uA nC --- 1.2 2.4 Rise Time VDD=15V , VGS=10V , RG=3.3 --- 14.4 26 Turn-Off Delay Time ID=15A --- 16.4 33 Fall Time --- 7.2 14.4 Ciss Input Capacitance --- 583 816 Coss Output Capacitance --- 77 108 Crss Reverse Transfer Capacitance --- 59 83 Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit --- --- 28 A --- --- 65 A --- --- 1.2 V --- 7.6 --- nS --- 2.4 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions 1,6 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25 IF=15A , dI/dt=100A/µs , TJ=25 Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A 4.The power dissipation is limited by 150 junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unitpower UN3002N3 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 28 80 ID=15A 26 60 24 50 RDSON (m ) ID Drain Current (A) 70 VGS=10V 40 22 VGS=7V 30 VGS=5V 20 VGS=4.5V 20 18 10 VGS=3V 0 16 0 1 2 3 VDS , Drain-to-Source Voltage (V) 4 4 Fig.1 Typical Output Characteristics 6 8 VGS (V) 10 Fig.2 On-Resistance vs. Gate-Source 70 10 VDS=15V VGS , Gate to Source Voltage (V) IS Source Current(A) 60 50 40 30 TJ=150 TJ=25 20 10 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) ID =15A 8 6 4 2 0 1.2 0 Fig.3 Forward Characteristics Of Reverse 6 9 QG , Total Gate Charge (nC) 12 15 Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 3 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 TJ ,Junction Temperature ( 100 -50 150 0 50 100 TJ , Junction Temperature ( ) ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 Unitpower UN3002N3 N-Ch 30V Fast Switching MOSFETs 1000 100.00 10us 100us 10.00 100 ID (A) Capacitance (pF) Ciss Coss 1ms 10ms 100ms 1.00 DC Crss 0.10 TC=25 Single Pulse F=1.0MHz 10 1 4 0.01 7 10 13 16 19 22 0.1 1 VDS , Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R JC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x R 0.001 0.00001 0.0001 0.001 0.01 0.1 1 JC 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4