TPD1045F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1045F Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1045F is a low-side power switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features • A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2-π-MOSⅤ) on single chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clamp), SOP8-P-1.27A Weight: 0.08 g (typ.) Over temperature (thermal shutdown), and overcurrent (switching mode). • Low Drain-Source ON-resistance: RDS (ON) = 100 mΩ (max) (@VIN = 5 V, ID = 2 A, Tch = 25°C) • 8-pin SOP package with embossed-tape packing. Pin Assignment (top view) Marking SOURCE 1 8 DRAIN SOURCE 2 7 DRAIN SOURCE 3 6 DRAIN IN 4 5 DRAIN TPD1045 F Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. (TOP VIEW) Note 1: Due to its MOS structure, this product is sensitive to static electricity. 1 2006-10-31 TPD1045F Block Diagram DRAIN IN Over temperature detection/protection Over current detection/protection SOURCE Pin Description Pin No. Symbol 1, 2, 3 SOURCE 4 IN 5 ,6, 7, 8 DRAIN Pin Description Source (ground) pin Input pin. This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin. When the load is short circuited and current in excess of the detection current (10A min) flows to the drain (output) pin, the drain (output) automatically turns on or off. Input Signal VIN Overcurrent detection (Load short circuit) Over temperature detection Over temperature detection hysteresis(10℃ typ.) Timing Chart Over temperature recovery VCL(DSS) VDD Drain to source Voltage VDS Inductive load Drain Current ID Normal Over current protection Thermal shutdown (Note 2) Note 2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (10°C typ.) in relation to the overheating detection temperature. 2 2006-10-31 TPD1045F Truth Table VIN VDS Output State State L H OFF H L ON L H OFF H H current limiting(switcing) L H OFF H H ON Normal Overcurrent Overtemperature Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS (DC) 50 V Drain current ID (DC) Internally Limited A Input voltage VIN −0.3~7 V Power dissipation(Note 3-a) PD(1) 1.1 W Power dissipation(Note 3-b) PD(2) 0.425 W EAS 158 mJ IAR 5 A EAR 0.11 mJ Operating temperature Topr −40~125 °C Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C Drain-source voltage Single Pulse Active Clamp Tolerance (Note 4) Active Clamp Current Repetitive Active Clamp Tolerance (Note 3-a) (Note 5) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth(ch-a) max 113.5 (Note 3-a) 294.0 (Note 3-b) Note 3: 3-a : glass epoxy board (a) Unit °C /W 3-b : glass epoxy board (b) FR-4 25.4×25.4×0.8 (unit：mm) FR-4 25.4×25.4×0.8 (unit：mm) Note 4 : VDD = 25 V､Tch = 25 ℃ (initial)､L = 7.4 mH､IAR = 5 A､RG = 25 Ω Note 5 : Repetitive rating : Pulse Width limited by maximum channel temperature. 3 2006-10-31 TPD1045F Electrical Characteristics Characteristics Drain to Source clamp voltage Input threshold voltage Protective circuit operation input voltage range Drain cut-off current Symbol Test Circuit V (CL) DSS - Vth - VIN (opr) - IDSS - IIH (1) - Test Condition Tch = 25°C Tch = -40~125°C Tch = 25°C Tch = -40~125°C - RDS (ON) - VDS - temperature detection TOT(1) - temperature recovery TOT(2) - IOC - Drain to Source on resistance Load-short tolerance Over temperature detection Tch = 25°C Tch = -40~125°C Tch = 25°C Tch = -40~125°C Tch = -40~125°C Tch = 25°C 1 toff Drain to Source diode forward voltage VDSF VIN = 0 V, ID = 10 mA 50 58 - 50 - - VDS = 12 V, ID = 10 mA 1.0 1.5 2.8 0.8 - 3.0 4 - 7 VIN = 0 V, VDS = 12 V - - 10 - - 30 VIN = 5 V, at normal operation - 300 750 - - 750 - VIN = 5 V, when protective circuit is actuated Tch = -40~125°C Tch = -40~125°C VIN = 4～7 V Tch = 25°C Tch = -40~125°C Tch = -40~125°C Tch = 25°C VIN = 5 V VDD = 12 V, VIN = 0 V/5 V, RL = 10Ω Tch = -40~125°C - Tch = 25°C Unit V V V μA μA - - 1200 - 70 100 - - 150 18 - - V 150 170 200 °C 125 160 - ℃ 5 10 - 5 - - - 25 100 - - 100 - 30 100 - - 100 - - 1.8 mΩ VIN = 5 V Tch = 25°C ton Switching time Max VIN = 5 V, ID = 2 A - Over current detection Typ Tch = -40~125°C High level input current IIH (2) Min VIN = 0 V, IF = 5 A A μs V Test Circuit 1 Switching time measuring circuit Test circuit Measured waveforms tr ≦ 0.1μs VDD=12V 90% VIN RL=10Ω 0V DRAIN IN VIN tf ≦ 0.1μs 5V 90% 10% 10% 90% TPD1045F P.G. V VDS VDS 12 V 10% 0V SOURCE ton 4 toff 2006-10-31 TPD1045F VVthth–-TTchch V(CL)DSS V – ch Tch (CL)DSS-T 5 60 50 40 30 20 VIN=0V 10 VDS=12V 5 70 入力しきい値電圧 Input threshold voltageVVthth(V) (V) ドレイン･ソース間クランプ電圧 Drain to Source clamp voltage VV(CL)DSS (V) (CL)DSS (V) 80 ID=10mA ID=10mA 4 4 3 3 2 2 1 1 0 -80 -60 -40 -20 0 0 20 40 60 80 100 120 140 160 -80 -60 -40 -20 IIIH(1) -T – ch Tch VIN=5V State:Normal 600 IH(1) 500 400 300 200 80 100 120 140 160 800 700 600 500 400 300 200 100 100 0 -80 -60 -40 -20 0 0 20 40 60 0 80 100 120 140 160 1 2 3 4 5 6 7 8 7 8 (V) V IN V 入力電圧 Input voltage IN (V) Channel temperature Tch ( ℃) Tch (°C) チャネル温度 IIH(2) –VIN IN IH(2) -V IIIH(2) – ch Tch IH(2) -T 1600 1000 900 VIN=5V State:Overcurrent 700 600 IH(2) 500 400 300 200 Tch=25°C State:Overcurrent 1400 High level input current 入力電流 IIH (2)(μA) (μA) I 800 High level input current 入力電流 IIH(2) (μA) IIH(2) (μA) 60 Tch=25°C State:Normal 900 High level input current IH (1)(μA) 入力電流 I(μA) I High level input current 入力電流 IIH(1) (μA) IIH(1) (μA) 700 40 IIH(1) IIH(1)– -VVIN IN 1000 1000 800 20 Channel temperature Tch (°C) チャネル温度 Tch (℃) Channel temperature Tch (°C) チャネル温度 Tch ( ℃) 900 0 1200 1000 800 600 400 200 100 0 -80 -60 -40 -20 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 (V) V IN V 入力電圧 Input voltage IN (V) Tch ( ℃T) ch (°C) Channel temperature チャネル温度 5 2006-10-31 TPD1045F R – Tch RDS(ON) DS(ON) -Tch RDS(ON) –V DS(ON)-V ININ 100 90 Drain to Source on resistance ドレイン･ソース間オン抵抗 RDS(ON) (mΩ) ＲDS(ON) (mΩ) Drain to Source on resistance ドレイン･ソース間オン抵抗 RDS(ON) (mΩ) DS(ON)(mΩ) Ｒ 120 100 80 60 40 20 VIN=5V ID=2A 80 70 60 50 40 30 20 ID=2A 10 0 -80 -60 -40 -20 Tch=25°C 0 0 20 40 60 0 80 100 120 140 160 1 2 6 7 8 20 (A) 18 VIN=5V 16 Over current detection 過電流検出値 IOC I(A) OC (A) Over current detection 過電流検出値 IOC I(A) OC 5 IOC – VININ IOC -V IIOC – ch Tch OC -T 20 14 12 10 8 6 4 2 0 Tch=25°C 18 16 14 12 10 8 6 4 2 0 -80 -60 -40 -20 0 20 40 60 0 80 100 120 140 160 1 2 – Tch tton,t,toff off－Tch Switching time ton,toff (μs) スイッチングタイム ton,toff (μs) VIN=5V 80 R L=10Ω 70 60 50 40 toｆｆ 30 20 ton 10 4 5 6 7 8 tton -VVININ on,t,toff of f – 100 VDD=12V 90 3 V IN (V) Input voltage VIN (V) 入力電圧 Channel temperature Tch ) (°C) Tch ( ℃ チャネル温度 Switching time ton ,toff (μs) スイッチングタイム ton,toff (μs) 4 V IN (V) 入力電圧 Input voltage VIN (V) ) ch (°C) Tch ( ℃T チャネル温度 Channel temperature 100 3 0 VDD=12V 90 RL=10Ω 80 Tch=25°C 70 60 50 toｆｆ 40 30 20 ton 10 0 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 Input voltage VIN (V) V IN (V) 入力電圧 Tch ( ℃) Tch (°C) Channel temperature チャネル温度 6 2006-10-31 1.6 VDD=12V 220 180 160 140 120 100 80 60 (W ) 200 PPDD-Ta – Ta TOT(1) – VIN TOT-VIN 1.4 Power dissipation PD 許容損失 P D (W) (°C ) 240 Over temperature detection TOT(1) 過熱検出温度 TOT (℃) TPD1045F 1.2 40 (1)Mounted on glass epoxy board(a) (2)Mounted on glass epoxy board(b) (1) 1 0.8 0.6 (2) 0.4 0.2 20 0 -40 0 2 3 4 5 6 7 8 -20 Input voltage (V) V IN V IN (V) 入力電圧 (°C/W ) 1 Transient過渡熱抵抗 thermal resistance rth(ch-a) rth(h-a) (℃/W) 0 0 20 40 60 80 100 120 140 160 Ambient周囲温度 temperature ) (°C) Ta ( ℃Ta rrth(ch-a)-tw th(ch-a) – tW 1000 (1)Mounted on glass epoxy board(a) (2)Mounted on glass epoxy board(b) (2) Measuring single pulse,Ta=25℃ 100 (1) 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse widthtw t(s) パルス幅 W (s) 7 2006-10-31 TPD1045F Package Dimensions Weight: 0.08 g (typ.) 8 2006-10-31 TPD1045F RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2006-10-31