ISL9V2540S3ST
EcoSPARK® N-Channel Ignition IGBT
250mJ, 400V
Features
General Description
! SCIS Energy = 250mJ at TJ = 25oC
The ISL9V2540S3ST is a next generation ignition IGBT that
offers outstanding SCIS capability in the industry standard
D²-Pak (TO-263) plastic package. This device is intended
for use in automotive ignition circuits, specifically as a coil
driver. Internal diodes provide voltage clamping without the
need for external components.
! Logic Level Gate Drive
! Qualified to AEC Q101
! RoHS Compliant
Applications
! Automotive Ignition Coil Driver Circuits
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
! Coil - On Plug Applications
Package
Symbol
COLLECTOR
R1
GATE
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev. A1
R2
EMITTER
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
November 2009
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
430
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 12.9A, L = 3.0mHy
250
mJ
ESCIS150
mJ
At Starting TJ = 150°C, ISCIS = 10A, L = 3.0mHy
150
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
15.5
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
15.3
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
166.7
W
1.11
W/°C
TJ
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω (HBM)
4
kV
Power Dissipation Derating TC > 25°C
TSTG
TL
Package Marking and Ordering Information
Device Marking
V2540S
Device
ISL9V2540S3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
370
400
430
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
390
420
450
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1KΩ,
See Fig. 11
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
±12
±14
-
V
TC = 25°C
-
-
25
µA
TC = 150°C
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
70
-
Ω
10K
-
26K
Ω
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
TC = 25°C,
See Fig. 3
-
1.37
1.8
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.5V
TC = 150°C
See Fig. 4
-
1.77
2.2
V
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
-
15.1
-
nC
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.1
-
V
-
0.61
-
µs
-
2.17
-
µs
IC = 10A,
VCE = 12V
Switching Characteristics
td(ON)R
triseR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C
VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
3.64
-
µs
-
2.36
-
µs
TJ = 25°C, L = 3.0mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
250
mJ
TO-263
-
-
0.9
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
Dynamic Characteristics
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
35
30
25
TJ = 25°C
20
15
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25
50
75
100
125
150
175
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
35
30
25
20
TJ = 25°C
15
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
200
1
2
tCLP, TIME IN CLAMP (µS)
1.55
VGE = 3.5V
ICE = 6A
1.50
1.45
VGE = 4.5V
VGE = 4.0V
1.40
1.35
VGE = 5.0V
1.30
VGE = 10.0V
1.25
-50
-25
0
25
50
75
100
125
150
VGE = 3.5V
2.0
VGE = 4.0V
1.9
1.8
1.7
VGE = 4.5V
1.6
VGE = 5.0V
1.5
VGE = 10.0V
-25
0
25
50
75
100
125
150
175
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
VGE = 10.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
TJ, JUNCTION TEMPERATURE (°C)
20
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.5V
VGE = 3.0V
5
TJ = - 40°C
0
0
9
ICE = 10A
2.1
1.4
-50
175
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
10
8
2.2
TJ, JUNCTION TEMPERATURE (°C)
15
4
5
6
7
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
VGE = 10.0V
VGE = 5.0V
15
VGE = 4.5V
VGE = 4.0V
VGE = 3.5V
10
VGE = 3.0V
5
TJ = 25°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
VGE = 10.0V
VGE = 5.0V
15
VGE = 4.5V
VGE = 4.0V
10
VGE = 3.5V
VGE = 3.0V
5
TJ = 175°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
15
TJ = 175°C
10
TJ = 25°C
5
TJ = -40°C
0
1.0
4.0
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
3.0
3.5
4.0
2.0
VCE = VGE
ICE = 1mA
VGE = 4.0V
VTH, THRESHOLD VOLTAGE (V)
14
12
10
8
6
4
1.8
1.6
1.4
1.2
2
0
25
50
75
100
125
150
1.0
-50
175
-25
TC, CASE TEMPERATURE (°C)
0
25
50
75
100
125
150
175
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
10
Inductive tOFF
VECS = 24V
ICE = 6.5A, VGE = 5V, RG = 1KΩ
9
1000
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
2.5
Figure 8. Transfer Characteristics
16
ICE, DC COLLECTOR CURRENT (A)
2.0
VGE, GATE TO EMITTER VOLTAGE (V)
100
10
VCES = 300V
8
7
6
Resistive tOFF
5
4
1
3
Resistive tON
VCES = 250V
0.1
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
175
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
Typical Performance Curves (Continued)
10
1500
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
C, CAPACITANCE (pF)
1250
1000
CIES
750
500
CRES
250
COES
0
0
5
10
15
20
8
6
4
2
VCE = 6V
0
0
25
VCE = 12V
5
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
15
20
25
QG, GATE CHARGE (nC)
30
35
40
Figure 14. Gate Charge
BVCER, BREAKDOWN VOLTAGE (V)
445
440
TJ = - 40°C
435
430
TJ = 175°C
425
420
TJ = 25°C
415
410
405
10
100
1000
5000
RG, SERIES GATE RESISTANCE (Ω)
ZθJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
0.1
10-1
t1
0.05
PD
0.02
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
10-2
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
Typical Performance Curves (Continued)
L
VCE
R
or
L
C
PULSE
GEN
LOAD
C
RG
RG = 1KΩ
DUT
G
+
DUT
G
VCE
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE
BVCES
tP
VCE
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGE
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 19. Unclamped Energy Test Circuit
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
Figure 20. Unclamped Energy Waveforms
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
Test Circuit and Waveforms
th
ISL9V2540S3ST N-Channel Ignition IGBT
SPICE Thermal Model
JUNCTION
REV 16 May 2005
ISL9V2540S3ST
CTHERM1 th 6 19e -4
CTHERM2 6 5 12e -3
CTHERM1
RTHERM1
CTHERM3 5 4 15e -3
CTHERM4 4 3 25e -3
6
CTHERM5 3 2 69e -3
CTHERM6 2 tl 100e -3
CTHERM2
RTHERM2
RTHERM1 th 6 80e -3
5
RTHERM2 6 5 81e -3
RTHERM3 5 4 82e -3
RTHERM4 4 3 100e -3
RTHERM3
CTHERM3
RTHERM5 3 2 150e -3
RTHERM6 2 tl 1645e -4
4
SABER Thermal Model
ISL9V2540S3ST
CTHERM4
RTHERM4
template thermal_model th tl
thermal_c th, tl
3
{
ctherm.ctherm1 th 6 = 19e -4
CTHERM5
RTHERM5
ctherm.ctherm2 6 5 = 12e -3
ctherm.ctherm3 5 4 = 15e -3
2
ctherm.ctherm4 4 3 = 25e -3
ctherm.ctherm5 3 2 = 69e -3
CTHERM6
RTHERM6
ctherm.ctherm6 2 tl = 100e -3
rtherm.rtherm1 th 6 = 80e -3
rtherm.rtherm2 6 5 = 81e -3
rtherm.rtherm3 5 4 = 82e -3
tl
CASE
rtherm.rtherm4 4 3 = 100e -3
rtherm.rtherm5 3 2 = 150e -3
rtherm.rtherm6 2 tl = 1645e -4
}
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I43
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ISL9V2540S3ST N-Channel Ignition IGBT
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