UniFET TM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features Description • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 28 -Continuous (TC = 100oC) - Pulsed Ratings 500 A 17 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 31 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns 112 A (Note 2) 2352 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 310 W 2.5 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.4 RθCS Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev.C0 Units o C/W 40 1 www.fairchildsemi.com FDA28N50F N-Channel MOSFET January 2012 Device Marking FDA28N50F Device FDA28N50F Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.7 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.140 0.175 Ω - 35 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 14A gFS Forward Transconductance VDS = 20V, ID = 14A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 28A VGS = 10V (Note 4, 5) - 3975 5387 pF - 566 753 pF - 38 56 pF - 80 105 nC - 22 - nC - 31 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 28A RG = 25Ω (Note 4, 5) - 67 145 ns - 137 285 ns - 192 395 ns - 101 212 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 28 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 112 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 28A - - 1.5 V trr Reverse Recovery Time - 266 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 28A dIF/dt = 100A/μs - 1.38 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6mH, IAS = 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA28N50F Rev.C0 2 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Package Marking and Ordering Information FDA28N50F N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 Figure 2. Transfer Characteristics 150 100 ID,Drain Current[A] ID,Drain Current[A] 100 o 150 C o -55 C 10 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.3 0.06 0.1 1 VDS,Drain-Source Voltage[V] 1 10 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 150 100 0.25 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 10 25 C *Notes: 1. VGS = 0V o 0.10 *Note: TJ = 25 C 0 25 50 75 ID, Drain Current [A] 1 0.2 100 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 Ciss 4000 2. 250μs Pulse Test 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 8000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.30 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz Coss 2000 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDA28N50F Rev.C0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 *Note: ID = 28A 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -75 175 Figure 9. Maximum Safe Operating Area 175 28 60μs 100 24 100μs 1ms ID, Drain Current [A] ID, Drain Current [A] -25 25 75 125 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 300 10ms 10 DC Operation in This Area 1 is Limited by R DS(on) *Notes: 0.1 20 16 12 8 o 1. TC = 25 C 4 o 0.01 *Notes: 1. VGS = 10V 2. ID = 14A 0.5 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 *Notes: o 0.01 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDA28N50F Rev.C0 t2 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Typical Performance Characteristics (Continued) FDA28N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA28N50F Rev.C0 5 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDA28N50F Rev.C0 6 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA28N50F Rev.C0 7 www.fairchildsemi.com tm FDA28N50F N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDA28N50F Rev.C0 8 www.fairchildsemi.com