FGB20N60SF 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) =2.2V @ IC = 20A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Welder, UPS, SMPS, PFC C COLLECTOR (FLANGE) G TO-263AB/D2-PAK G C E E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC Units 600 V ± 20 V 40 A 20 A Pulsed Collector Current @ TC = 25oC 60 A Maximum Power Dissipation @ TC = 25oC 208 W Maximum Power Dissipation o @ TC = 100 C 83 Operating Junction Temperature TJ Ratings Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o -55 to +150 oC o 300 C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (PCB Mount)(2) Typ. Max. - 0.6 o 40 oC/W - Units C/W Notes: 2: Mounted on 1” square PCB(FR4 or G-10 material) ©2008 Fairchild Semiconductor Corporation FGB20N60SF Rev. A 1 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT October 2010 Device Marking Device Package Rel Size Tape Width Quantity FGB20N60SF FGB20N60SF TO-263AB/D2-PAK 13” Dia - 800 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA 4.0 5.0 6.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 2.2 2.8 V Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V - VCE(sat) IC = 20A, VGE = 15V, TC = 125oC - 2.4 - V - 940 - pF - 110 - pF - 40 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 90 - ns tf Fall Time - 24 48 ns Eon Turn-On Switching Loss - 0.37 - mJ Eoff Turn-Off Switching Loss - 0.16 - mJ VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC Ets Total Switching Loss - 0.53 - mJ td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 95 - ns tf Fall Time - 28 - ns Eon Turn-On Switching Loss - 0.4 - mJ Eoff Turn-Off Switching Loss - 0.28 - mJ Ets Total Switching Loss - 0.69 - mJ - 65 - nC - 7 - nC - 33 - nC Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGB20N60SF Rev. A VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 60 o TC = 25 C 20V Collector Current, IC [A] 15V 10V 20 VGE = 8V 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 40 20 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] 40A 20A 2 IC = 10A 1 25 20 0 Common Emitter VGE = 15V 3 o TC = 125 C 40 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 10V VGE = 8V 20 60 Collector-Emitter Voltage, VCE [V] 12V 40 6.0 Figure 3. Typical Saturation Voltage Characteristics 0 20V 15V 40 0 0.0 o TC = 125 C 12V Collector Current, IC [A] 60 Figure 2. Typical Output Characteristics Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 0 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] FGB20N60SF Rev. A 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o TC = 25 C o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 20A IC = 10A 0 20 Figure 9. Capacitance Characteristics 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 2500 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o 2000 Capacitance [pF] 40A 4 TC = 25 C Cies 1500 1000 Coes 500 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] TC = 25 C 12 Figure 11. SOA Characteristics 200V 9 6 3 0 30 300V VCC = 100V 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100μs 10 Switching Time [ns] Collector Current, Ic [A] 10μs 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C tr td(on) 10 o TC = 25 C o 0.1 2. TJ = 150 C 3. Single Pulse 1 FGB20N60SF Rev. A 10 100 Collector-Emitter Voltage, VCE [V] Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 125 C 5 1000 4 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Common Emitter VCC = 400V, VGE = 15V IC = 20A Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C o TC = 25 C td(off) o TC = 125 C 100 tf 10 0 10 20 30 40 TC = 125 C Switching Time [ns] Switching Time [ns] o 50 tr td(on) 10 3 60 0 10 Figure 15. Turn-off Characteristics vs. Collector Current 40 Figure 16. Switching Loss vs. Gate Resistance Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C td(off) 100 TC = 25 C 1 o TC = 125 C Eon Eoff tf 10 30 3 300 Switching Time [ns] 20 Collector Current, IC [A] Gate Resistance, RG [Ω] 0 10 20 30 0.1 40 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 18. Turn off Switching SOA Characteristics 80 10 Common Emitter VGE = 15V, RG = 10Ω o o TC = 125 C 1 Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eon Eoff 0.1 10 Safe Operating Area o 0.02 0 10 20 30 1 40 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] FGB20N60SF Rev. A VGE = 15V, TC = 125 C 5 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT Typical Performance Characteristics FGB20N60SF 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 19.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 single pulse 0.01 -5 10 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] FGB20N60SF Rev. A 6 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT Mechanical Dimensions TO-263AB/D2-PAK FGB20N60SF Rev. A 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FGB20N60SF Rev. A 8 www.fairchildsemi.com FGB20N60SF 600V, 20A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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