NTSV30100SG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.41 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halide Free and are RoHS Compliant http://onsemi.com 1 2, 4 3 4 TO−220AB CASE 221A STYLE 3 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • 1 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 2 3 MARKING DIAGRAM Mechanical Characteristics • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in Weight (Approximately): 1.9 grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec AYWW TSV30100SG AKA A Y WW G AKA = Assembly Location = Year = Work Week = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device Package Shipping† NTSV30100SG TO−220 (Pb−Free/ Halide−Free) 50 Units/Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 0 1 Publication Order Number: NTSV30100S/D NTSV30100SG MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 105°C) IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 95°C) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A Operating Junction Temperature TJ −40 to +150 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.0 70 °C/W °C/W ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 30 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) (IF = 30 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.47 0.57 0.915 − − 1.1 0.41 0.54 0.78 − − 0.85 12 11 55 27 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% http://onsemi.com 2 Unit V mA mA 1000 60 mA mA NTSV30100SG TYPICAL CHARACTERISTICS 1000 TA = 150°C 10 TA = 125°C 1 0.1 0.0 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 25°C 0.2 0.4 0.6 0.8 TA = 125°C 1 0.1 TA = 25°C 0.01 30 40 50 60 70 80 90 100 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics 1000 1 10 VR, REVERSE VOLTAGE (V) IF(AV), AVERAGE FORWARD CURRENT (A) 60 TJ = 25°C 100 dc 50 45 40 35 30 25 SQUARE WAVE 20 15 10 5 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 4. Current Derating, Case 45 TA = 150°C IPK/IAV = 20 40 RqJC = 1.3°C/W 55 Figure 3. Typical Junction Capacitance PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) C, JUNCTION CAPACITANCE (pF) 10 0.001 20 1.0 10000 100 0.1 TA = 150°C 100 IPK/IAV = 10 35 IPK/IAV = 5 30 25 SQUARE WAVE 20 15 10 dc 5 0 0 14 16 18 2 4 6 8 10 12 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation http://onsemi.com 3 20 140 NTSV30100SG R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 6. Typical Transient Thermal Response, Junction−to−Case http://onsemi.com 4 100 1000 NTSV30100SG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F T SEATING PLANE C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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