SEMICONDUCTORS PNP TIP34-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current 02/10/2012 Value TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C COMSET SEMICONDUCTORS -40 -60 -80 -100 -40 -60 -80 -100 Unit V V -5 V -10 A -15 A 1|4 SEMICONDUCTORS PNP TIP34-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings Base Current IB @ Tc < 25° PC Power Dissipation @ Ta < 25° TJ Junction Temperature Ts Storage Temperature range TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C Value Unit -3 A 80 Watts 3.5 150 °C -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings RthJ-MB From junction to mounting base RthJ-A From junction to ambient in free air 02/10/2012 TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C COMSET SEMICONDUCTORS Value Unit 1.56 °C/W 35.7 °C/W 2|4 SEMICONDUCTORS PNP TIP34-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICES Collector Cutoff Current ICEO Collector Cutoff Current IE= 0, VCE = -VCEO IB= 0, VCE = -30V IB= 0, VCE = -60V IEBO Emitter Cutoff Current VEB= -5 V IC= 0 VCEO Collector-Emitter Breakdown Voltage (*) IC= -30 mA IB= 0 IC= -3 A IB= -300 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -10 A IB= -2.5 mA IC= -3 A VCE= -4 V VBE(on) Base-Emitter Voltage (*) IC= -10 A VCE= -4 V VCE= -4 V IC= -1 A hFE DC Current Gain (*) VCE= -4 V IC= -3 A TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C TIP34 TIP34A TIP34B TIP34C Min Typ Max Unit - - -0.4 Ma - - -0.7 - - -0.7 - - -1 mA -40 -60 -80 -100 - - V - - -1 V - - -4 V - - -1.6 V - - -3 V 40 - - mA 20 - 100 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 02/10/2012 COMSET SEMICONDUCTORS 3|4 SEMICONDUCTORS PNP TIP34-A-B-C Symbol Ratings Test Condition(s) Current Gain-Bandwidth Product fT VCE= -10 V IC= -0.5 A f= 1kHz Min Typ Max Unit 3 - - MHz TIP34 TIP34A TIP34B TIP34C MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Case : Max. 15.20 1.90 4.60 3.10 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 0.35 5.35 20.00 19.60 0.95 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 4.80 Base Collector Emitter Collector September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 02/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4