COMSET TIP112

SEMICONDUCTORS
NPN TIP110-111-112
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are designed for general purpose amplifier and low-speed switching applications.
PNP complements are TIP115-116-117
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
@ Tc < 25°
PT
Power Dissipation
@ Ta < 25°
TJ
Ts
Junction Temperature
Storage Temperature range
05/10/2012
Value
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
COMSET SEMICONDUCTORS
60
80
100
60
80
100
Unit
V
V
5
V
2
A
4
A
50
mA
50
Watts
2
150
°C
-65 to +150
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SEMICONDUCTORS
NPN TIP110-111-112
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-case
From junction-case
RthJ-amb
From junction-ambient
Value
Unit
2.5
°C/W
62.5
°C/W
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector Cutoff Current
IE= 0,VCB = VCBOmax
ICEO
Collector Cutoff Current
IE= 0, VCE = 1/2
VCEOmax
IEBO
Emitter Cutoff Current
VEB= 5 V, IC= 0
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 2 A, IB= 8 mA
VBE(on)
Base-Emitter Voltage
(*)
IC= 2 A, VCE= 4 V
VCE= 4 V, IC= 1 A
hFE
DC Current Gain (*)
VCE= 4 V, IC= 2 A
COB
Output Capacitance
IE= 0, VCB = 10 V
f= 0.1MHz
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Min
Typ
Max
Unit
-
-
1
mA
-
-
2
mA
-
-
2
mA
60
80
100
-
-
V
-
-
2.5
V
-
-
2.8
V
1000
-
-
500
-
-
-
-
100
pF
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
05/10/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
NPN TIP110-111-112
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Min.
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
05/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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