AO6424 30V N-Channel MOSFET General Description The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Features VDS 30V ID (at VGS=10V) 5A RDS(ON) (at VGS=10V) < 31mΩ RDS(ON) (at VGS =4.5V) < 43mΩ D Top View D D D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.25 W 0.8 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±20 4 IDM TA=25°C Power Dissipation B Units V 5 ID TA=70°C Maximum 30 RθJA RθJL -55 to 150 Typ 82 110 56 °C Max 100 130 70 Units °C/W °C/W °C/W www.freescale.net.cn AO6424 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 25 TJ=55°C 5 ±100 nA 2.4 V 25.5 31 41 50 VGS=4.5V, ID=4A 34 43 mΩ 1 V 1.5 A 310 pF Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 45 1.6 pF 35 50 pF 3.25 4.9 Ω nC 5.2 6.3 Qg(4.5V) 2.55 3.2 Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=5A VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω mΩ S SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 1.8 VGS=10V, ID=5A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 8.5 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 2.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/5 www.freescale.net.cn AO6424 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 30 10V VDS=5V 7V 25 4.5V 10 20 ID(A) ID (A) 4V 15 3.5V 5 10 5 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 40 35 RDS(ON) (mΩ ) 25°C 125°C VGS=4.5V 30 25 VGS=10V 1.8 VGS=10V ID=5A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=4A 1 0.8 20 0 3 6 9 12 0 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 100 1.0E+02 ID=5A 1.0E+01 40 1.0E+00 60 IS (A) RDS(ON) (mΩ ) 80 125°C 1.0E-02 125°C 25°C 1.0E-03 40 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO6424 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=15V ID=5A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 250 200 150 Coss 100 2 50 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 1000 10µs RDS(ON) limited Power (W) ID (Amps) 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=130°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO6424 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/5 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn