KSC2331 NPN Epitaxial Silicon Transistor Features • • • • • Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V 700 mA IC Collector Current PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO BVEBO Min. Typ. Max. Units IC=100μA, IE=0 80 V Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V Emitter-Base Breakdown Voltage IE=10μA, IC=0 8 V ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 μA IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 μA hFE DC Current Gain VCE=2V, IC=50mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 40 0.2 240 0.7 V VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.20 V hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 © 2011 Fairchild Semiconductor Corporation KSC2331 Rev. B0 www.fairchildsemi.com 1 KSC2331 — NPN Epitaxial Silicon Transistor December 2011 240 200 VCE = 2V 200 160 IB = 1.4mA 140 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 180 IB = 1.2mA 120 IB = 1.0mA 100 80 IB = 0.8mA 60 IB = 0.6mA 40 IB = 0.4mA 20 IB = 0.2mA 160 120 80 40 0 0 0 5 10 15 20 25 30 35 40 45 50 1 55 10 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 1000 10 VCE = 2V IC = 10 IB 1 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 0.1 VCE(sat) 100 10 1 0.0 0.01 1 10 100 1000 0.2 IC[mA], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10000 1.6 o PC[W], POWER DISSIPATION 1.4 1000 s m 00 *2 IC[mA], COLLECTOR CURRENT 1. Ta = 25 C 2. *Single Pulse DC 100 1.2 1.0 0.8 0.6 0.4 0.2 10 0.0 1 10 100 1000 0 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Power Derating © 2011 Fairchild Semiconductor Corporation KSC2331 Rev. B0 25 www.fairchildsemi.com 2 KSC2331 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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