AO4420 30V N-Channel MOSFET General Description Product Summary The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V ID 9.7 IDM 60 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 13.7 Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 28 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W AO4420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=13.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance 1 Units V 5 VGS=4.5V, ID=12.7A Output Capacitance 0.004 TJ=55°C VGS=10V, ID=13.7A Coss Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ 30 100 nA 1.1 2 V 8.3 10.5 12.5 15 9.7 12 mΩ 1 V 5 A A VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=4.5V, VDS=15V, ID=13.7A S 4050 pF 256 pF 168 pF 0.86 1.1 Ω 30.5 36 nC Qgs Gate Source Charge Qgd Gate Drain Charge 8.6 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω mΩ 37 0.76 3656 VGS=0V, VDS=15V, f=1MHz µA 4.6 nC nC 9 ns ns 3.4 7 49.8 75 ns 5.9 11 ns IF=13.7A, dI/dt=100A/µs 22.5 28 Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs 12.5 16 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 8 : Nov 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 10V VGS=5V 4.5V 50 25 VGS =2.5V 20 ID(A) ID(A) 40 30 125°C 15 10 20 25°C VGS =2.0V 5 10 0 0 0.0 0 1 2 3 4 0.5 5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS(Volts) Figure 1: On-Regions Characteristics 1.8 Normalize ON-Resistance 12 11 RDS(ON)(mΩ ) VGS =4.5V 10 9 8 VGS =10V 7 ID=13.7A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1.0 0.8 0 6 0 5 10 15 20 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+01 30 1E+00 ID=13.7A 25 125°C IS(A) RDS(ON)(mΩ ) 1E-01 125°C 20 15 1E-02 1E-03 10 25°C 25°C 1E-04 5 1E-05 0 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO4420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10000 VDS=15V ID=13.7A Ciss Capacitance (pF) VGS(Volts) 4 3 2 1000 Coss 1 Crss 100 0 0 10 20 30 0 40 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 50 100 10µs RDS(ON) limited 40 100µs ID(A) 0.1s 1s 1 1ms Power (W) 10ms 10 10s 20 DC 0.1 0.1 30 10 TJ(Max) =150°C TA =25°C 1 10 100 0 0.01 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. 100 1000