TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SLVU2.8 Series SLVU2.8 Series 2.8V 40A TVS Array RoHS Pb GREEN The SLVU2.8 series was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in parallel with the low voltage TVS to protect one unidirectional line or a high speed data pair when two devices are paired together. These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per the IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5, tP=8/20μs) with very low clamping voltages. Features Pinout 3 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Low capacitance of 2pF per line (Pin 2 to 1) • EFT, IEC61000-4-4, 40A (5/50ns) • Low leakage current of 1μA (MAX) at 2.8V • Lightning, IEC61000-4-5, 40A (8/20μs) • Small SOT23-3 (JEDEC TO-236) package saves Applications 2 1 • 10/100/1000 Ethernet • Analog Inputs • WAN/LAN Equipment • Base Stations • Switching Systems Functional Block Diagram • Desktops, Servers, and Notebooks 3 Application Example NC 1 RJ-45 Connector 2 J1 Ethernet PHY J8 NC See Application Example Detail section on page 135 for more information ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. 1 Revision: February 15, 2012 SLVU2.8 Series SLVU2.8 Description TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SLVU2.8 Series Electrical Characteristics (TOP = 25°C) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IT=2μA 3.0 V Snap Back Voltage VSB IT=50mA 2.8 V Reverse Leakage Current ILEAK VR=2.8V (Pin 2 or 3 to 1) Reverse Standoff Voltage Clamping Voltage RDYN ESD Withstand Voltage1 VESD V 1 μA V IPP=24A, tP=8/20μs (Pin 3 to 1) 8.3 12.5 V IPP=5A, tP=8/20μs (Pin 2 to 1) 7.0 8.5 V IPP=24A, tP=8/20μs (Pin 2 to 1) 13.9 15.0 V (VC2 - VC1) / (IPP2 - IPP1) (Pin 2 to 1) 0.4 Ω IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV VR=0V, f=1MHz (Pin 2 to 1) CD Diode Capacitance 1 Units 2.8 7.0 Clamping Voltage1 Dynamic Resistance Max 5.7 VC Clamping Voltage1 Typ IPP=5A, tP=8/20μs (Pin 3 to 1) 1 Clamping Voltage1 Min 2.0 2.5 pF Note: 1Parameter is guaranteed by design and/or device characterization. Absolute Maximum Ratings Rating Units Peak Pulse Power (tP=8/20µs) 600 W Peak Pulse Current (tP=8/20µs) 40 A Operating Temperature -40 to 85 ºC Storage Temperature -60 to 150 ºC 4.0 3.5 Capacitance (pF) Parameter Figure 1: Capacitance vs. Reverse Voltage CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 DC Bias (V) Figure 3: Pulse Waveform Figure 2: Clamping Voltage vs. IPP 110% 14 100% 90% 10 Percent of IPP Clamping Voltage-VC (V) 12 8 6 4 80% 70% 60% 50% 40% 30% 20% 2 10% 0% 0.0 0 0 5 10 15 20 25 10.0 15.0 20.0 25.0 30.0 Time (μs) Peak Pulse Current-IPP (A) SLVU2.8 Series 5.0 2 Revision: February 15, 2012 ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SLVU2.8 Series Application Example Detail Product Characteristics Protection of one unidirectional line D1 Protection of one unidirectional data line is realized by connecting pin 3 to the protected NC line, and pins 1 and 2 to GND. In this configuration, the device presents a maximum loading capacitance of tens of picofarads. During positive transients, D2 the internal TVS diode will conduct and steer current fromLow pincapacitance 3 to 1 (GND), the data line at or protectionclamping of one high speed data pair Data Line below the specified voltages for the device (see Electrical Characteristics section). For negative transients, the internal compensating diode is forward biased, steering the current from pin 2 (GND) to 3. Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 SLVU2.8 Data Line Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Soldering Parameters Protection of one unidirectional line D1 Pb – Free assembly Reflow Condition NC Pre Heat D2 Low capacitance protection of one high speed data pair Low capacitance protection of a high-speed data pair is realized by connecting two devices in antiparallel. As shown, pin 1 of the first device is connected to D1 and pin 2 is connected to D2. Additionally, pin 2 of the second device is connected to D1 and pin 1 is connected to D2. Pin 3 must be NC (or not connected) for both devices. When the potential on D1 exceeds the potential on D2 (by the rated standoff voltage), pin 2 on the second device will steer current into pin 1. The compensating diode will conduct in the forward direction steering current into the avalanching TVS diode which is operating in the reverse direction. For the opposite transient, the first device will behave in the same manner. In this two device arrangement, the total loading capacitance is two times the rated capacitance from pin 2 to pin 1 which will typically be much less than 10pF making it suitable for highspeed data pair such as 10/100/1000 Ethernet. - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max - Temperature (TL) (Liquidus) Reflow 60 – 150 seconds - Temperature (tL) Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tP Temperature TP NC RJ-45 Connector J1 217°C Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) Ethernet PHY 25 tS time to peak temperature Time J8 NC ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information. 3 Revision: February 15, 2012 SLVU2.8 Series TVS Diode Arrays (SPA™ Family of Products) Lightning Surge Protection - SLVU2.8 Series Package Dimensions — SOT-23 b Package 3 Pins SOT23-3 3 JEDEC TO-236 Millimetres E1 E 2 1 Recommended Pad Layout e e1 D A M P A1 C N O L1 Inches Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.1 0.0004 0.004 b 0.3 0.5 0.012 0.020 c 0.08 0.2 0.003 0.008 D 2.8 3.04 0.110 0.120 E 2.1 2.64 0.083 0.104 E1 1.2 1.4 0.047 0.055 e 0.95 BSC 0.038 BSC e1 1.90 BSC 0.075 BSC L1 0.54 REF 0.021 REF M 2.29 .90 N 0.95 0.038 O 0.78 0.30 TYP P 0.78 0.30 TYP Part Marking System Part Numbering System U 2.8 SLVU2.8 H T G U2.8 G= Green T= Tape & Reel Package Series Voltage Level Product Series U = SLVU2.8 Ordering Information H = SOT23-3 Part Number Package Marking Min. Order Qty. SLVU2.8HTG SOT23-3 U2.8 3000 Embossed Carrier Tape & Reel Specification — SOT23-3 Package P0 P1 D1 Symbol E D F W P .229 ± .013 [.009 ± .0005] .99 .46 [.039] [.018] 13.5º MAX 8º MAX 9º MAX A0 SLVU2.8 Series 2.06 [.081] .71 [.028] K0 Millimetres Min Max Min Max A0 3.05 3.25 0.12 0.128 B0 2.67 2.87 0.105 0.113 D 3.9 4.1 0.153 0.161 D1 1.95 2.05 0.788 0.792 E 1.65 1.85 0.065 0.073 F 3.45 3.55 0.136 0.14 K0 1.12 1.32 0.476 0.484 P 0.95 1.05 0.037 0.041 P0 3.9 4.1 0.153 1.6 P1 B0 W 4 Revision: February 15, 2012 Inches 7.9 8.3 0.161 0.063 0.311 0.327 ©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com/SPA for current information.