KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Collector Absolute Maximum Ratings 3.Emitter Ta=25°C unless otherwise noted Symbol Value Units VCBO Collector-Base Voltage Parameter 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A A IB Base Current (DC) 2 IBP *Base Current (Pulse) 4 A PC Power Dissipation (TC=25°C) 75 W TJ Junction Temperature 150 °C - 55 to 150 °C Rating Units Junction to Case 1.65 °C/W Junction to Ambient 62.5 °C/W 270 °C TSTG Storage Temperature * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics Symbol Rθjc Rθja TL Parameter Thermal Resistance Maximum Lead Temperature for Soldering © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 www.fairchildsemi.com 1 KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor May 2010 Symbol Ta=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0 1000 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 Emitter-Base Breakdown Voltage IE=1mA, IC=0 450 V 12 V BVEBO ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA ICES Collector Cut-off Current VCES=1000V, IEB=0 Ta=25°C 100 µA ICEO Collector Cut-off Current VCE=450V, IB=0 IEBO Emitter Cut-off Current VEB=10V, IC=0 hFE DC Current Gain VCE=1V, IC=0.8A VCE(sat) Collector-Emitter Saturation Voltage Ta=125°C 500 µA Ta=25°C 100 µA Ta=125°C 500 µA 10 µA 0.5 V Ta=25°C 15 25 Ta=125°C 10 14 VCE=1V, IC=2A Ta=25°C 6 9 Ta=125°C 4 6 VCE=2.5V, IC=1A Ta=25°C 18 25 Ta=125°C 14 IC=0.8A, IB=0.08A Ta=25°C IC=2A, IB=0.4A Ta=125°C 0.55 0.75 V Ta=25°C 0.47 0.75 V Ta=125°C 0.9 1.1 V 0.9 1.5 V IC=0.8A, IB=0.04A Ta=25°C IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage Ta=125°C 1.8 2.5 V Ta=25°C 0.22 0.5 V Ta=125°C 0.3 0.6 V IC=0.8A, IB=0.08A Ta=25°C IC=2A, IB=0.4A 18 0.35 0.8 1.0 V Ta=125°C 0.65 0.9 V Ta=25°C 0.9 1.0 V Ta=125°C 0.8 0.9 V Cib Input Capacitance VEB=10V, IC=0.5A, f=1MHz 550 750 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 60 100 pF fT Current Gain Bandwidth Product IC=0.5A,VCE=10V VF Diode Forward Voltage IF=1A, IC=1mA, IE=0 Ta=25°C 0.86 Ta=125°C 0.79 IF=2A Ta=25°C 0.95 Ta=125°C 0.88 V 460 360 325 ns ns ns tfr VCE(DSAT) 11 MHz 1.3 V V 1.5 V Diode Forward Recovery Time (di/dt=10A/µs) IF=0.4A IF=1A IF=2A Dynamic Saturation Voltage IC=1A, IB1=100mA VCC=300V at 1 µs Ta=25°C 8 V Ta=125°C 15 V IC=1A, IB1=100mA VCC=300V at 3 µs Ta=25°C 2.9 V Ta=125°C 8 V IC=2A, IB1=400mA VCC=300V at 1 µs Ta=25°C 9 V Ta=125°C 17 V IC=2A, IB1=400mA VCC=300V at 3 µs Ta=25°C 1.9 V Ta=125°C 8.5 V © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 www.fairchildsemi.com 2 KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics Symbol Parameter Test Condition Min Typ. Max. Units 500 750 ns 1.5 µs 100 200 ns 150 ns 2.2 µs RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs) tON Turn On Time tSTG Storage Time tF tON tSTG tF 1.2 Fall Time Turn On Time Storage Time Fall Time tON Turn On Time tSTG Storage Time tF IC=2.5A, IB1=500mA, IB2=-1A, VCC=250V, RL = 100Ω Fall Time IC=2A, IB1=400mA, IB2=-1A, VCC=300V, RL = 150Ω IC=2.5A, IB1=500mA, IB2=-5mA, VCC=300V, RL = 120Ω Ta=25°C 100 Ta=125°C 150 Ta=25°C 1.4 Ta=125°C 1.7 Ta=25°C 90 Ta=125°C 150 Ta=25°C 120 Ta=125°C Ta=25°C ns µs 150 ns 150 ns 2.1 µs ns 150 1.8 Ta=125°C 2.6 Ta=25°C 110 Ta=125°C 160 Ta=25°C 1.9 ns µs 150 ns ns INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG Storage Time tF Fall Time tC Cross-over Time IC=2.5A, IB1=500mA, IB2=-0.5A, VZ=350V, LC=300µH Ta=125°C 2.4 Ta=25°C 160 Ta=125°C 330 Ta=25°C 350 Ta=125°C tSTG tF tC tSTG tF tC Storage Time Fall Time Cross-over Time Storage Time Fall Time Cross-over Time IC=2A, IB1=400mA, IB2=-0.4A, VZ=300V, LC=200µH IC=1A, IB1=100mA, IB2=-0.5A, VZ=300V, LC=200µH © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 Ta=25°C 2.2 µs 200 ns 500 ns 2.25 µs ns 750 1.95 Ta=125°C 2.9 Ta=25°C 120 Ta=125°C 270 Ta=25°C 300 Ta=125°C 700 Ta=25°C 0.6 Ta=125°C 1.0 µs ns µs 150 ns ns 450 ns ns 0.8 µs µs Ta=25°C 70 ns Ta=125°C 110 ns Ta=25°C 80 Ta=125°C 170 130 ns ns www.fairchildsemi.com 3 KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics (Continued) Ta=25°C unless otherwise noted 100 IB = 1A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 4 0.3A 3 0.2A 2 IB = 0.1A o TJ = -25 C 10 o TJ = 125 C 1 0 IB = 0 0 2 4 6 8 1 0.01 10 0.1 VCE = 5V o hFE, DC CURRENT GAIN TJ = +25 C o TJ = -25 C 10 o TJ = 125 C 1 0.01 0.1 1 10 IC = 5IB o TJ = 125 C 1 O TJ = +25 C o TJ = -25 C 0.1 1E-3 10 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage 10 10 VBE(sat)[V], BASE-EMITTER VOLTAGE IC = 10IB o TJ = 125 C 1 o TJ = +25 C o TJ = -25 C 0.1 1E-3 10 Figure 2. DC current Gain VCE(sat)[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 100 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VCE(sat)[V], COLLECTOR-EMITTER VOLTAGE VCE = 1V o TJ = +25 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 0.01 0.1 1 1 o TJ = -25 C o TJ = 125 C o TJ = +25 C 0.1 1E-3 10 IC[A], COLLECTOR CURRENT 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 IC = 5IB www.fairchildsemi.com 4 KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Typical Characteristics (Continued) 2000 IC = 10IB f = 1MHz 1000 1 Cob, Cib[pF], CAPACITANCE VBE(sat)[V], BASE-EMITTER VOLTAGE 10 o TJ = -25 C o TJ = 125 C o TJ = +25 C 0.1 1E-3 0.01 0.1 1 Cib 100 Cob 10 10 1 10 IC[A], COLLECTOR CURRENT REVERSE VOLTAGE [V] Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance 10 di/dt = 10A/µS VCC = 250V IC = 5IB1 = 2.5IB2 o TC = 25 C 450 tSTG, tF[ns], SWITCHING TIME tfr,[ns], FORWARD RECOVERY TIME 500 400 350 300 250 0.25 0.50 0.75 1.00 1.25 1.50 1.75 tSTG 1 0.1 0.01 2.00 tF 1 0.2 IF[A], FORWARD CURRENT 10 IC[A], COLLECTOR CURRENT Figure 9. Forward Recovery Time Figure 10. Switching Time 5 2000 tC[ns], CROSSOVER TIME IBon = IBoff VCC = 15V VZ = 300V LC = 200µH tSTG[µs], STORAGE TIME 100 o IC = 2A @ TJ=125 C 4 o IC = 1A @ TJ=125 C 3 o IC = 2A @ TJ=25 C IBon = IBoff VCC = 15V VZ = 300V LC = 200µH o IC = 2A @ TJ=125 C 1500 1000 o IC = 1A @ TJ=125 C o IC = 2A @ TJ=25 C 500 o IC = 1A @ TJ=25 C 2 0 5 10 o IC = 1A @ TJ=25 C 15 0 20 hFE, FORCED GAIN 4 6 8 10 12 14 16 18 20 hFE, FORCED GAIN Figure 11. Induction Storage Time Figure 12. Inductive Crossover Time © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 2 www.fairchildsemi.com 5 KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Typical Characteristics (Continued) 1000 o IC = 2A @ TJ=125 C IC[A], COLLECTOR CURRENT 800 tF[ns], FALL TIME 100 IBon = IBoff VCC = 15V VZ = 300V LC = 200µH 600 o IC = 1A @ TJ=125 C 400 o IC = 2A @ TJ=25 C 200 10 1µs 10µS 5ms 1ms 1 DC 0.1 o IC = 1A @ TJ=25 C 0 2 4 6 8 10 12 14 16 18 0.01 10 20 100 hFE, FORCED GAIN VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 13. Inductive Fall Time Figure 14. Safe Operating Area 8 100 6 PC[W], POWER DISSIPATION Vcc = 50V VBE(off) = -5V LC = 1mH Ic = 4 Ib 7 IC[A], COLLECTOR CURRENT 1000 5 4 -5V 3 2 75 50 25 1 0 200 300 400 500 600 700 800 900 1000 0 1100 25 50 75 100 125 150 175 O TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 15. Reverse Bias Safe Operating VCE[V], COLLECTOR-EMITTER VOLTAGE 0 Figure 16. Power Derating 6 Vcc = 50V VBE(off) = -5V LC = 1mH 5 4 Ic = 5 Ib Ic = 4 Ib 3 Ic = 3.3 Ib 2 Ic = 2.2 Ib 1 0 0 1 2 3 4 5 6 7 8 9 10 ICE[A], COLLECTOR CURRENT Figure 17. RBSOA Saturation © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 www.fairchildsemi.com 6 KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Typical Characteristics KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Physical Dimensions TO-220 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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