AO3414 20V N-Channel MOSFET General Description Features The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ SOT23 Top View (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev 7: July 2010 ±8 V ID 2.5 IDM 16 W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 3 TA=70°C A Maximum 20 RθJA RθJL www.aosmd.com Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3414 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 16 TJ=55°C 0.7 62 85 VGS=2.5V, ID=2.8A 58 70 mΩ 85 mΩ VGS=1.8V, ID=2.5A 68 Forward Transconductance VDS=5V, ID=3A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance 260 VGS=0V, VDS=10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time mΩ S 1 V 2 A 320 pF 48 pF 27 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs V 51 gFS Rg 1 68 TJ=125°C Static Drain-Source On-Resistance Output Capacitance nA A RDS(ON) Reverse Transfer Capacitance µA 5 100 VGS=4.5V, ID=3A Coss Units 20 VDS=20V, VGS=0V IDSS Crss Max VGS=4.5V, VDS=10V, ID=3A VGS=5V, VDS=10V, RL=3.3Ω, RGEN=6Ω pF 3 4.5 Ω 2.9 3.8 nC 0.4 nC 0.6 nC 2.5 ns 3.2 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 21 ns 3 ns Body Diode Reverse Recovery Time IF=3A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 3.8 19 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 12 curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: July 2010 www.aosmd.com Page 2 of 5 AO3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 16 VDS=5V 4.5V 12 ID(A) ID (A) 2V 2.5V 12 8 8 VGS=1.5V 4 4 125°C 25°C 0 0 0 1 2 3 4 5 0 VDS (Volts) Figure 1: On-Region Characteristics 100 RDS(ON) (mΩ Ω) 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 1.6 Normalized On-Resistance 120 0.5 VGS=1.8V 80 VGS=2.5V 60 VGS=1.8V ID=2.5A 1.4 VGS=2.5V ID=2.8A VGS=4.5V ID=3A 1.2 1 VGS=4.5V 40 0.8 0 3 6 9 12 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 120 1E+01 ID=3A 1E+00 12 125°C 1E-01 IS (A) RDS(ON) (mΩ Ω) 100 80 125°C 1E-02 25° 1E-03 60 1E-04 25° 40 0 2 4 6 8 1E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 7: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 400 VDS=10V ID=3A Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 300 200 Coss 100 Crss 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 20 1000 100.00 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 10.00 Power (W) 100µs ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1ms 1.00 RDS(ON) limited 10ms 0.1s 0.10 DC 100 10 1s 0.01 0.1 1 10 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev 7: July 2010 www.aosmd.com Page 4 of 5 AO3414 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC Qgs Vds Qgd - DUT Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 7: July 2010 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5