ETC ST3414A_V1

ST3414A
N Channel Enhancement Mode MOSFET
3.0A
DESCRIPTION
ST3414A is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density process
is especially tailored to minimize on-state resistance.These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
3
D
G
S
1
2
1.Gate
2.Source
3.Drain
20V/4.2A, RDS(ON) = 45mΩ ( Typ.)
@VGS = 4.5V
20V/3.4A, RDS(ON) = 60 mΩ
@VGS = 2.5V
20V/2.8A, RDS(ON) = 80 mΩ
@VGS = 1.8V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23package design
PART MARKING
SOT-23
3
14YA
1
Y: Year Code
2
A: Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1
ST3414A
N Channel Enhancement Mode MOSFET
3.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
ID
3.0
2.2
A
IDM
30
A
Continuous Source Current (Diode Conduction)
IS
1.2
A
TA=25℃
TA=70℃
PD
1.25
0.8
W
TJ
-55/150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
125
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Operation Junction Temperature
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1
ST3414A
N Channel Enhancement Mode MOSFET
3.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS=0V,ID=-250uA
20
VGS(th)
VDS=VGS,ID=250uA
0.40
IGSS
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
IDSS
V
1.0
V
VDS=0V,VGS=±12V
±100
nA
VDS=20V,VGS=0V
1
VDS=20V,VGS=0V
TJ=55℃
5
uA
Drain-source On-Resistance
RDS(on)
VGS=4.5V,ID=3.2A
VGS=2.5V,ID=2.4A
VGS=1.8V,ID=1.8A
0.045
0.060
0.080
Ω
Forward Transconductance
gfs
VDS=4V,ID=3.6V
10
S
Diode Forward Voltage
VSD
IS=1.6A,VGS=0V
0.8
1.2
4.8
8
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
Turn-On Time
td(on)
Turn-Off Time
Crss
tr
td(off)
tf
VDS=10V
VGS=4.5V
ID=2.8A
VDS=6V
VGS=0V
f=1MHz
VDD=6V
RL=6Ω
ID=1.0A
VGEN=4.5V
RG=6Ω
1.0
nC
1.0
485
85
pF
40
8
14
12
18
30
35
12
16
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1
ST3414A
N Channel Enhancement Mode MOSFET
3.0A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1
ST3414A
N Channel Enhancement Mode MOSFET
3.0A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1
ST3414A
N Channel Enhancement Mode MOSFET
3.0A
SOT-23- PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1