WILLAS FM120-M 8050SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reverse leakage current and thermal resistance. TRANSISTORbetter (NPN) • Low profile surface mounted application in order to SOD-123H optimize board space. SOT-23 0.146(3.7) FEATURES • Low power loss, high efficiency. current z Pb-Free• High package iscapability, availablelow forward voltage drop. • High surge capability. RoHS product for packing code suffix ”G” for overvoltage protection. • Guardring Halogen• Ultra free product forswitching. packing code suffix “H” high-speed • Silicon epitaxial planar chip, metal silicon junction. Collector Current:parts IC=0.5A z meet environmental standards of • Lead-free MARKING: 0.130(3.3) 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. EMITTER 3. COLLECTOR MIL-STD-19500 /228 RoHS product for packing code suffix "G" •J3Y Halogen free product for packing code suffix "H" Mechanical data MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol• Epoxy : UL94-V0 rated flame retardant Parameter • Case : Molded plastic, SOD-123H Collector-Base Voltage VCBO , • Terminals :Plated terminals, solderable per MIL-STD-750 Value Unit 40 V 25 V 0.031(0.8) Typ. Collector-Emitter Voltage VCEO Method 2026 Emitter-Base • Polarity : Indicated Voltage by cathode band Collector Current Position : Any-Continuous • Mounting • Weight : Approximated 0.011 gram Collector Dissipation VEBO IC PC 0.031(0.8) Typ. 5 V Dimensions in inches and (millimeters) 0.5 A 0.3 W 150 ℃ -55-150 ℃ Junction Temperature Tj 0.040(1.0) 0.024(0.6) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tstg Ratings at 25℃Storage ambientTemperature temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) For capacitive load, derate current by 20% MarkingParameter Code RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Symbol VRRM Maximum Recurrent Peak Reverse Voltage V(BR)CBO VRMS Collector-base breakdown voltage Maximum RMS Voltage Maximum DC Blocking Voltage VDC Test conditions 12 13 14 20 30 40 15 Min 16 50 60 Typ 18 Max10 Unit115 28 35 40 42 56 70 V 105 40 50 60 80 100 IC14 = 100μA,21IE=0 20 30 IC=1mA, IB 0 V(BR)CEO = Collector-emitter breakdown voltage IO V(BR)EBO Emitter-base breakdown Peak Forward Surge Currentvoltage 8.3 ms single half sine-wave IFSM IE=100μA, IC=0 ICBO RΘJA V= CB=40 V , IE 0 Maximum Average Forward Rectified Current 25 CJ Typical Junction Capacitance (Note 1) ICEOTJ Collector cut-off currentRange Operating Temperature 5 Storage Temperature Range - 65 to +175 TSTG = VEB= 5V , IC 0 IEBO Emitter cut-off current CHARACTERISTICS 150 V 150 120 200 140 200 V 0.1 μA -550.1 to +150 μA 0.1 μA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- VF HFE(1) Maximum Forward Voltage at 1.0A DC Maximumgain Average Reverse Current at @T A=25℃ DC current Rated DC Blocking Voltage 40 120 -55, to = VCB= 20V I E+125 0 100 1.0 30 superimposed on rated load (JEDEC method) Collector Typicalcut-off Thermalcurrent Resistance (Note 2) 80 IR @T A=125℃ HFE(2) 0.50 VCE= 1V, I C= 50mA VCE= 1V, I C= 500mA 0.70 120 50 0.5 0.9 0.85 350 0.92 10 NOTES: Collector-emitter saturation voltage VCE(sat) I=500 mA, IB= 50mA 0.6 V VBE(sat) IC=500 mA, IB= 50mA 1.2 V 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Base-emitter saturation voltage fT Transition frequency VCE= 6V, I C= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank 2012-06 Range 2012-0 L 120-200 H WILLAS ELECTRONIC CO 200-350 WILLAS ELECTRONIC CORP. WILLAS FM120-M 8050SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Typical Characterisitics Features 100 Static Characteristic Mechanical data COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR-EMITTER VOLTAGE VCE COMMON EMITTER V =1V Method 2026 a hFE 0.071(1.8) 0.056(1.4) 10 3 1 a 3 30 10 VBEsat 1.2 0.040(1.0) 0.024(0.6) IC —— 0.031(0.8) Typ. a Dimensions in inches and (millimeters) Ta=100℃ 0.4 IC (mA) β=10 0.0 3 1 14 40 Cob/ Cib VRMS 14 21 28 35 100 DC Blocking Voltage Maximum VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Ta=25℃ Peak Forward Surge Current 8.3 ms single half sine-wave 10 Ta=100 ℃ superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 1 Storage 0.3 Temperature Range 0.1 0.2 500 18 80 10 100 115 150 120 200 42 56 105 140 C60 ib 80 f=1MHz IC=0 IE=0/70 150 200 30 RΘJA Typical Thermal Resistance (Note 2) 3 16 60 —— (pF) 30 15 50 C (mA) CE CAPACITANCE COMMON EMITTER 100 FM150-MH FM160-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH FM140-MH COLLECTOR CURRENT FM180-MH IC (mA) 13 30 100 Maximum RMS Voltage V =1V 30 10 12 20 Cob 10 VCB/ VEB Ta=25 ℃ 100 1.0 30 40 120 -55 to3 +125 -55 to +150 - 65 to +175 TSTG 1 0.4 0.6 CHARACTERISTICS 0.8 BASE-EMMITER Maximum Forward Voltage at 1.0A DCVOLTAGE VBE (V) Maximum Average Reverse Current at @T A=25℃ fT —— IC 1000 @T A=125℃ Rated DC Blocking Voltage 0.1 10 0.3 FM150-MH1 FM160-MH 3 20 FM1150-MH FM1200-M FM140-MH FM180-MH FM1100-MH SYMBOL1.0FM120-MH FM130-MH VF 0.50 IR REVERSE VOLTAGE 0.70 PC 400 VCE=6V V (V) 0.9 0.85 0.5 —— Ta 10 0.92 (MHz) Ta=25℃ NOTES: COLLECTOR POWER DISSIPATION PC (mW) IC (mA) T =25℃ 0.8 VRRM COLLECTOR CURRENT 500 100 IC 0.031(0.8) Typ. 500 100 IC —— VBE Maximum 500 Recurrent Peak Reverse Voltage fT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient TRANSITION FREQUENCY 30 10 T =25℃ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS AND 30 Marking Code 100 2012-06 10 10 300 200 100 WILLAS ELECTRONIC CO 0 100 30 COLLECTOR CURRENT 2012-0 0.012(0.3) Typ. 100 COLLECTOR CURRENT • Polarity : Indicated by cathode band 100 • Mounting Position : Any • Weight : Approximated 0.011 gram T =100℃ 1 0.146(3.7) 0.130(3.3) Ta=25℃ (V) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. β=10 For capacitive load, derate current by 20% 10 C Ta=100℃ flame • Epoxy : UL94-V0 Vrated —— retardant IC CEsat 500 • Case : Molded plastic, SOD-123H , 300 • Terminals :Plated terminals, solderable per MIL-STD-750 RATINGS COLLECTOR CURRENT FE CE SOD-123H DC CURRENT GAIN better reverse leakage current and thermal resistance. 400uA EMITTER =25℃ mounted applicationTain order to •80 Low profile surface 350uA optimize board space. 300uA • Low power loss, high efficiency. 60 forward voltage drop. • High current capability, low250uA • High surge capability. 200uA •40 Guardring for overvoltage protection. 150uA • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon 100uA •20 Lead-free parts meet environmental standards of MIL-STD-19500 /228 IB=50uA •0RoHS product for packing code suffix "G" 0 4 8 12 16 Halogen free product for packing code suffix "H" 20 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) offers • Batch process design, excellent power dissipation COMMON Packagehoutline —— I 1000 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M 8050SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .122(3.10) .063(1.60) .047(1.20) 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .106(2.70) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 VDC 20 30 40 50 60 .080(2.04) Maximum DC Blocking Voltage .070(1.78) IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range IFSM RΘJA Typical Thermal Resistance (Note 2) VF Maximum Average Reverse Current at @T A=25℃ 115 150 120 200 56 70 105 140 150 200 .003(0.08) 80 100 40 120 -55 to +125 -55 to +150 - 65 to +175 @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .020(0.50) .012(0.30) 2- Thermal Resistance From Junction to Ambient 0.50 0.70 0.85 0.9 0.5 IR 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage TSTG .004(0.10)MAX. CHARACTERISTICS 18 .008(0.20) 80 100 1.0 30 0.92 10 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) Dimensions in inches and (millimeters) 2012-06 WILLAS ELECTRONIC COR Rev.D 2012-0 WILLAS ELECTRONIC CORP.