SHENZHENFREESCALE SUD30N04-10

SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
ID (A)
0.010 @ VGS = 10 V
30a
0.014 @ VGS = 4.5 V
30a
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Order Number:
SUD30N04-10
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
40
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 175_C)
TC = 25_C
TC = 100_C
Pulsed Drain Current
V
30a
ID
30a
IDM
Avalanche Current
Unit
A
120
IAR
50
Repetitive Avalanche Energyb
L = 0.1 mH
EAR
125
Power Dissipation
TC = 25_C
PD
97c
W
TJ, Tstg
- 55 to 175
_C
Operating Junction and Storage Temperature Range
mJ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
PCB Mountd
J
Junction-to-Ambient
ti t A bi t
Junction-to-Case
Free Air
RthJA
RthJC
Typical
Maximum
45
55
110
125
1.5
1.8
Notes:
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
1/4
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Unit
_C/W
C/W
SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
VGS(th)
VDS = VGS, IDS = 250 mA
1
IGSS
VDS = 0 V, VGS = 20 V
100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125_C
50
VDS = 40 V, VGS = 0 V, TJ = 175_C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currenta
Drain Source On-State
Drain-Source
On State Resistancea
Forward
Transconductancea
IDSS
ID(on)
rDS(on)
DS( )
VDS = 5 V, VGS = 10 V
3
30
VGS = 10 V, ID = 30 A
0.085
0.010
0.014
0.017
VGS = 10 V, ID = 30 A, TJ = 175_C
0.0185
0.022
VGS = 4.5 V, ID = 10 A
0.0115
0.014
VGS = 4.5 V, ID = 10 A, TJ = 125_C
0.0195
0.024
VGS = 4.5 V, ID = 10 A, TJ = 175_C
0.025
0.031
VDS = 15 V, ID = 30 A
20
nA
mA
m
A
VGS = 10 V, ID = 30 A, TJ = 125_C
gfs
V
57
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
160
Total Gate Chargec
Qg
50
Gate-Source Chargec
Qgs
9
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
2700
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V,, VGS = 10 V,, ID = 30 A
pF
100
nC
11
Rg
1
td(on)
3.6
14
30
tr
VDD = 15 V, RL = 0.5 W
13
30
td(off)
ID 30 A, VGEN = 10 V, RG = 2.5 W
45
90
25
50
tf
Source-Drain Ciode Ratings and Characteristics (TC =
Continuous Current
600
W
ns
25_C)b
Is
30
Pulsed Current
ISM
120
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
0.90
1.50
V
trr
IF = 30 A, di/dt = 100 A/ms
50
100
ns
Reverse Recovery Time
Notes:
a. Pulse test; pulse width 300 ms, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2/4
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A
SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
120
120
VGS = 10, 9, 8, 7, 6 V
5V
90
I D - Drain Current (A)
I D - Drain Current (A)
90
60
4V
30
60
TC = 125_C
30
25_C
3V
0
0
2
4
6
8
10
0
VDS - Drain-to-Source Voltage (V)
Transconductance
2
3
4
5
6
On-Resistance vs. Drain Current
0.030
TC = - 55_C
0.025
r DS(on) - On-Resistance ( Ω )
25_C
80
g fs - Transconductance (S)
1
VGS - Gate-to-Source Voltage (V)
100
125_C
60
40
20
0
0.020
0.015
VGS = 4.5 V
VGS = 10 V
0.010
0.005
0.000
0
30
60
90
120
0
20
40
VGS - Gate-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
2400
1600
Coss
800
80
100
40
50
Gate Charge
10
Ciss
3200
60
ID - Drain Current (A)
Capacitance
4000
C - Capacitance (pF)
- 55_C
0
Crss
0
VGS = 15 V
ID = 30 A
8
6
4
2
0
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
3/4
40
0
10
20
30
Qg - Total Gate Charge (nC)
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SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
100
Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A
2.0
TJ = 150_C
I S - Source Current (A)
r DS(on) - On-Resistance ( Ω )
(Normalized)
2.5
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ = 25_C
10
1
175
0.3
TJ - Junction Temperature (_C)
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
200
40
100
10 ms
Limited
by rDS(on)
100 ms
I D - Drain Current (A)
I D - Drain Current (A)
30
20
10
10
1 ms
10 ms
100 ms
dc
1
TC = 25_C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
50
VDS - Drain-to-Source Voltage (V)
TA - Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -5
10 -4
10 -3
10 -2
10 -1
1
3
Square Wave Pulse Duration (sec)
4/4
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