Monolithic PIN SP4T Diode Switch MASW-004100-1193 Rev. 2 Features • • • • Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction Description The MASW-004100-1193 is a SP4T series-shunt broad band switch made with M/A-COM’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeterwave frequencies. Applications These high performance switches are suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved. Absolute Maximum Ratings TAMB = +25°C ( Unless Otherwise Specified ) Parameter Operating Temperature Value -65°C to +125°C Storage Temperature RF C.W. Incident Power (± 20mA) Bias Current ( Forward ) Applied Voltage ( Reverse ) -65°C to +150°C +33dBm ± 20mA -25 Volts J4 J3 J2 J5 J1 Notes: Exceeding these limits may cause permanent damage. 1 Monolithic Pin Diode Series-Shunt Switch MASW-004100-1193 Rev 2 Electrical Specifications @ TAMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements) Parameter Frequency Insertion Loss 20 GHz Isolation 20 GHz Minimum 28 Nominal Maximum 0.9 1.3 34 Units dB dB Input Return Loss 20 GHz 15 dB Output Return Loss 20 GHz 15 dB 10 GHz 50 nS 1 Switching Speed Notes: 1.) Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS rise and fall times. Typical Driver Connections Condition of RF Output Condition of RF Output Condition of RF Output Condition of RF Output J5 J1-J2 J1-J3 J1-J4 J1-J5 Control Level ( DC Current ) at Port J2 J3 J4 -20mA +20mA +20mA +20mA Low Loss Isolation Isolation Isolation +20mA -20mA +20mA +20mA Isolation Low Loss Isolation Isolation +20mA +20mA -20mA +20mA Isolation Isolation Low Loss Isolation +20mA +20mA +20mA -20mA Isolation Isolation Isolation Low Loss Assembly Considerations Cleanliness Chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-004100-1193 PIN switch is ESD, Class 1A procedures should be used. sensitive (HBM). Proper ESD handling equipment and Die Wire Bonding Thermosonic wedge wire bonding using ¼ x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible. Die Mounting These chips have a Ti-Pt-Au back metal stack that can be die mounted using a gold-tin eutectic solder preform or conductive Ag epoxy. Mounting surface must be clean and flat. Eutectic Die Attachment An 80/20 Gold-Tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be ~290°C. The chip should not be exposed to temperatures greater than 320°C for more than 20 seconds. No more than three seconds should be required for the attachment. Electrical Epoxy Die Attachment Assembly should be preheated to 125-150°C. A controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s schedule. 2 Typical Microwave Performance MASW-004100-1193 INSERTION LOSS Loss (dB) 0.0 -0.5 J1-J2 J1-J3 -1.0 J1-J4 J1-J5 -1.5 -2.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Frequency (GHz) MASW-004100-1193 INPUT RETURN LOSS 0 R. Loss (dB) -10 -20 J1-J2 J1-J3 -30 J1-J4 -40 J1-J5 -50 -60 0 5 10 15 20 25 30 Frequency (GHz) 3 Typical Microwave Performance MASW-004100-1193 OUTPUT RETURN LOSS 0 R. Loss(dB) -5 -10 J2 -15 J3 -20 J4 -25 J5 -30 -35 0 5 10 15 20 25 30 Frequency (GHz) MASW-004100-1193 ISOLATION 0 -10 Isolation (dB) -20 -30 J1-J2 -40 J1-J3 -50 J1-J4 -60 J1-J5 -70 -80 -90 0 5 10 15 20 25 30 Frequency (GHz) 4 Operation of the MASW-004100-1193 PIN Switch Operation of the MASW-004100-1193 PIN switch is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated switching ports as shown in Figure 1. The backside area of the die is the RF and DC return ground plane. The DC return is achieved on the common port, J1. The DC control currents should be supplied by constant current source. The voltages at these points will not exceed ±1.5 volts (1.2 volts typical) for supply currents up to ±20 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. The bias network design should yield > 30 dB RF to DC isolation. Best insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return path, (J1 ). A minimum value of |-2V| is recommended at this return node, which is achievable with a standard, ±5V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz Operation is shown in Figure 1. 2 – 18 GHz Bias Network J1 39 pF 22 pF DC Bias 39 pF 22nH 100 Ω 22nH HMIC Switch Die J5 22 pF J4 J2 J3 Fig. 1 5 MASW-004100-1193 Chip Dimensions INCHES MM NOMINAL NOMINAL A .066 1.67 B .047 1.19 C .054 1.37 D .012 0.31 E .043 1.08 F .009 0.22 G .004 0.11 H .004 0.11 I .033 0.84 J .061 1.56 Thickness .005 .120 Bond Pads .005X.005 0.120X.0120 DIM Ordering Information Part Number Package MASW-004100-11930W Waffle Pack 6