DYNEX DIM800DCS12-A000

DIM800DCS12-A000
IGBT Chopper Module
DS5839- 1.1 June 2005
FEATURES
•
10µs Short Circuit Withstand
•
Non Punch Through Silicon
•
Isolated Copper Baseplate
•
Lead Free construction
KEY PARAMETERS
VCES
VCE (sat)*
(typ)
IC
(max)
IC(PK)
(max)
(LN24042)
1200V
2.2V
800A
1600A
*
(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
•
Chopper
•
DC Motor Drives
•
Power Supplies
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800DCS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
Fig. 1 Chopper circuit diagram
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DCS12-A000
Note: When ordering, please use the whole part number.
Outline type code: D
(See package details for further information)
.
Fig. 2 Electrical connections (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
VGE = 0V
Max.
Units
1200
V
±20
V
Continuous collector current
Tcase = 85° C
800
A
IC(PK)
Peak collector current
1ms, Tcase =115° C
1600
A
Pmax
Max. transistor power dissipation
Tcase = 25° C, Tj = 150° C
6940
W
Diode I t value (IGBT arm)
2
Diode I t value (Diode arm)
VR = 0, tP = 10ms, Tvj = 125° C
100
225
kA S
Isolation voltage – per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
2
It
Visol
2
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Parameter
Symbol
Rth(j-c)
Al2O3
Copper
20mm
10mm
175
Thermal resistance – transistor
Test Conditions
Continuous dissipation –
Min.
Typ.
Max.
Units
-
-
18
° C/kW
-
-
40
° C/kW
27
° C/kW
junction to case
Thermal resistance – diode (IGBT
Rth(j-c)
arm)
Thermal resistance- diode ( Diode
arm)
Rth(c-h)
Tj
Tstg
-
Continuous dissipation –
junction to case
Thermal resistance – case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Storage temperature range
Screw torque
-
-
8
° C/kW
Transistor
-
-
150
°C
Diode
-
-
125
°C
-40
-
125
°C
Mounting – M6
-
-
5
Nm
Electrical connections – M4
-
-
2
Nm
Electrical connections – M8
-
-
10
Nm
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Min.
Typ.
Max.
Units
VGE = OV, VCE = VCES
-
-
1
mA
VGE = OV, VCE = VCES, Tcase = 125° C
-
-
25
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 800A
-
2.2
2.8
V
VGE = 15V, IC = 800A, Tcase = 125° C
-
2.6
3.2
V
Ices
Ices
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
800
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1600
A
IF = 800A
-
IF = 800A, Tcase = 125° C
-
2.1
1.8
2.1
1.7
2.4
2.1
2.4
2.0
VCE = 25V, VGE = 0V, f = 1MHz
-
90
-
nF
VF
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
V
V
Cies
Input capacitance
LM
Module inductance – per arm
-
-
20
-
nH
RINT
Internal resistance – per arm
-
-
0.27
-
mΩ
SCData
Short circuit. Isc
Tj = 125° C, Vcc = 900V,
I1
-
5500
-
A
tp ≤ 10µs,
VCE(max) = VCES - L* ×di/dt
I2
-
4500
-
A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IC = 800A
-
1250
-
ns
Fall time
VGE = ±15V
-
170
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
130
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.7Ω
-
250
-
ns
L ∼ 100nH
-
250
-
ns
td(off)
tf
tr
Parameter
Turn-off delay time
Rise time
EO
Turn-on energy loss
-
80
-
mJ
Qg
Gate charge
-
9
-
µC
Qrr
Diode reverse recovery charge
IF = 800A, VR = 600V,
-
12
-
µC
Irr
Diode reverse current
dlF/dt = 4200A/µs
-
570
-
A
Diode arm
-
60
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
IC = 800A
-
1500
-
ns
Fall time
VGE = ±15V
-
200
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
160
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.7Ω
-
400
-
ns
L ∼ 100nH
-
220
-
ns
-
120
-
mJ
IF = 800A, VR = 600V,
-
240
-
µC
dlF/dt = 4000A/µs
-
680
-
A
Diode arm
-
110
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125° C unless stated otherwise.
Symbol
td(off)
tf
tr
Parameter
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
Fig.7 Diode typical forward characteristics
Fig.8 Reverse bias safe operating area
Fig.9 Diode reverse bias safe operating area
Fig.10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1600 gms
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DCS12-A000
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
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follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
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subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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