AO6804A 20V Dual P-Channel MOSFET General Description The AO6804A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS = 20V ID = 5.0A (VGS = 4.5V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 4.0V) RDS(ON) < 34mΩ (VGS = 3.1V) RDS(ON) < 39mΩ (VGS = 2.5V) D1 11 Top View S1 1 6 G1 D2 11 Rg D1/D2 2 5 D1/D2 S2 3 4 G2 Rg G2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain A Current Pulsed Drain Current Power Dissipation A B TA=25°C Junction and Storage Temperature Range 1/5 C ±12 V ID 4 IDM 25 W 0.8 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A 1.3 PD TA=70°C Maximum Junction-to-Lead Units V 5 TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient 20 Maximum VGS S2 RθJA RθJL -55 to 150 Typ 76 118 54 °C Max 95 150 68 Units °C/W °C/W °C/W www.freescale.net.cn AO6804A 20V Dual P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V TJ = 55°C 5 ±10 υA 1 V 18 23 28 26 33 40 VGS = 4.0V, ID = 4.5A 19 24 30 mΩ VGS = 3.1V, ID = 4.5A 20 27 34 mΩ VGS = 2.5V, ID = 4.0A 21 30 39 mΩ 1 V 1.3 A 225 pF VDS = 0V, VGS = ±10V Gate Threshold Voltage VDS = VGS ID = 250µA 0.5 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 25 VGS = 4.5V, ID = 5.0A TJ=125°C gFS Forward Transconductance VDS = 5V, ID = 5.0A VSD Diode Forward Voltage IS = 1A,VGS = 0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance µA 0.7 Gate-Body leakage current Crss Units V 1 IGSS Static Drain-Source On-Resistance Max 20 VDS = 20V, VGS = 0V VGS(th) RDS(ON) Typ A 18 0.65 180 VGS=0V, VDS=10V, f=1MHz mΩ S 95 pF 18 pF VGS=0V, VDS=0V, f=1MHz 2.7 4 5.6 7.5 VGS= 4.5V, VDS= 10V, ID= 5A 0.85 nC SWITCHING PARAMETERS Total Gate Charge Qg kΩ nC Qgs Gate Source Charge Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 172 ns tr Turn-On Rise Time 368 ns tD(off) Turn-Off DelayTime 2.94 υs tf trr Qrr Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=2.0Ω, RGEN=3Ω IF=5A, dI/dt=100A/µs I Body Diode Reverse Recovery Charge F=5A, dI/dt=100A/µs 2.5 32 3.2 43 υs ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA Rev2: Nov. 2010 2/5 www.freescale.net.cn AO6804A 20V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 25 4.5V 3V 20 VDS= 5V 2.5V 20 1.8V 15 ID(A) ID (A) 15 2V 10 10 5 25°C 5 VGS=1.5V 125°C -40°C 0 0 0 1 2 3 4 5 0 0.5 32 1.5 2 2.5 3 Normalized On-Resistance 1.6 30 VGS= 2.5V RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 28 VGS= 3.1V 26 24 VGS= 4.0V VGS= 4.5V ID= 5A 1.4 1.2 1.0 0.8 VGS= 4.5V 22 0.6 0 2 4 I6F=-6.5A, 8dI/dt=100A/µs 10 -50 80 0 25 50 75 100 125 150 175 1E+01 ID= 5.0A 1E+00 70 1E-01 IS (A) 60 RDS(ON) (mΩ ) -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 125°C 1E-02 1E-03 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 40 125°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 -40°C OUT OF PRODUCT DESIGN, 30 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE 25°C 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 -40°C 10 1 3/5 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO6804A 20V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 5 VDS= 10V ID= 5A Capacitance (pF) VGS (Volts) 4 3 2 Ciss 100 Coss Crss 1 0 10 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs ID (Amps) 100µs 1 RDS(ON) limited 1ms 10ms 100ms 100 Power (W) 10 0.1 1 TJ(Max)=150°C TA=25°C DC 0.01 0.1 10s 0.1 0.00001 dI/dt=100A/µs IF=-6.5A, 10 100 1 VDS (Volts) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT Single Pulse NOTICE. T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4/5 www.freescale.net.cn AO6804A 20V Dual P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn