ONSEMI NUP2115L

NUP2115L, SZNUP2115L
Dual Line FlexRay
Bus Protector
The SZ/NUP2115L has been designed to protect the FlexRay
transceiver from ESD and other harmful transient voltage events. This
device provides bidirectional protection for each data line with a
single compact SOT−23 package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
Features
•
•
•
•
•
•
•
•
•
•
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Diode Capacitance Matching
Low Reverse Leakage Current (< 100 nA)
Low Capacitance High−Speed FlexRay Data Rates
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
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SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
200 W PEAK POWER
SOT−23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
Applications
• Automotive Networks
♦
FlexRay Bus
MARKING DIAGRAM
25WMG
G
1
25W
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 0
1
Publication Order Number:
NUP2115L/D
NUP2115L, SZNUP2115L
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
PPK
Rating
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
Value
Unit
200
W
TJ
Operating Junction Temperature Range
−55 to 150
°C
TJ
Storage Temperature Range
−55 to 150
°C
TL
Lead Solder Temperature (10 s)
260
°C
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
8.0
400
23
kV
V
kV
ESD
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol
VRWM
Parameter
Test Conditions
Min
Typ
Max
Unit
24
−
−
V
26.2
−
32
V
Reverse Working Voltage
(Note 2)
Breakdown Voltage
IT = 1 mA (Note 3)
IR
Reverse Leakage Current
VRWM = 24 V
−
15
100
nA
VC
Clamping Voltage
IPP = 1 A (8 x 20 ms Waveform)
(Note 4)
−
33.4
36.6
V
VC
Clamping Voltage
IPP = 3 A (8 x 20 ms Waveform)
(Note 4)
−
44
50
V
IPP
Maximum Peak Pulse Current
8 x 20 ms Waveform (Note 4)
−
−
3.0
A
CJ
Capacitance
VR = 0 V, f = 1 MHz (Line to GND)
−
−
10
pF
DC
Diode Capacitance Matching
VR = 0 V, 5 MHz (Note 5)
−
0.26
2
%
VBR
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Package
Shipping†
NUP2115LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZNUP2115LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
NUP2115LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZNUP2115LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NUP2115L, SZNUP2115L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
90
80
c−t
70
IPP, PEAK PULSE CURRENT (A)
3.5
110
100
60
td = IPP/2
50
40
30
20
10
0
0
10
5
20
15
2.5
2.0
1.5
1.0
0.5
0.0
30
30
25
3.0
35
Figure 2. Clamping Voltage vs Peak Pulse Current
Figure 1. Pulse Waveform, 8 × 20 ms
50
9
45
40
125°C
7
35
25°C
6
IT, (mA)
C, CAPACITANCE (pF)
8
5
30
25
20
15
4
25°C
10
3
0
10
5
15
20
0
20
25
TA = −55°C
22
24
26
28
30
32
34
VBR, VOLTAGE (V)
Figure 4. VBR versus IT Characteristics
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
120
25
−55°C
+25°C
TA = +150°C
100
PERCENT DERATING (%)
20
15
10
5
0
65°C
125°C
5
VR, REVERSE VOLTAGE (V)
VR, REVERSE BIAS VOLTAGE (V)
50
VC, CLAMPING VOLTAGE (V)
t, TIME (ms)
2
45
40
0
1
2
3
IL, LEAKAGE CURRENT (nA)
4
80
60
40
20
0
−60
5
Figure 5. IR versus Temperature Characteristics
−30
0
30
60
90
TEMPERATURE (°C)
120
150 180
Figure 6. Temperature Power Dissipation Derating
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3
NUP2115L, SZNUP2115L
APPLICATIONS
Figure 7 provides an example of a dual bidirectional
TVS diode array that can be used for protection with the
FlexRay network. The bidirectional array is created from
four identical Zener TVS diodes. The clamping voltage of
the composite device is equal to the breakdown voltage of
the diode that is reversed biased, plus the diode drop of the
second diode that is forwarded biased.
TVS diodes provide a low cost solution to conducted and
radiated Electromagnetic Interference (EMI) and
Electrostatic Discharge (ESD) noise problems. The noise
immunity level and reliability of FlexRay transceivers can
be easily increased by adding external TVS diodes to
prevent transient voltage failures.
The NUP2115L provides a transient voltage suppression
solution for FlexRay data communication lines. The
NUP2115L is a dual bidirectional TVS device in a compact
SOT−23 package. This device is based on Zener technology
that optimizes the active area of a PN junction to provide
robust protection against transient EMI surge voltage and
ESD.
TVS Diode Protection Circuit
TVS diodes provide protection to a transceiver by
clamping a surge voltage to a safe level. TVS diodes have
high impedance below and low impedance above their
breakdown voltage. A TVS Zener diode has its junction
optimized to absorb the high peak energy of a transient
event, while a standard Zener diode is designed and
specified to clamp a steady state voltage.
Figure 7. FlexRay TVS Protection Circuit
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4
NUP2115L, SZNUP2115L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5817−1050
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NUP2115L/D