AP40P03GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
-30V
RDS(ON)
28mΩ
ID
G
-30A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is universally preferred for all commercialindustrial through hole applications and suited for low voltage
applications.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-30
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-18
A
1
IDM
Pulsed Drain Current
-120
A
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200731072-1/4
AP40P03GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-18A
-
-
28
mΩ
VGS=-4.5V, ID=-10A
-
-
50
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-18A
-
20
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-18A
-
14
22
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-18A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
30
-
ns
tf
Fall Time
RD=0.8Ω
-
57
-
ns
Ciss
Input Capacitance
VGS=0V
-
915
1465
pF
Coss
Output Capacitance
VDS=-25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Min.
Typ.
IS=-18A, VGS=0V
-
-
-1.2
V
IS=-18A, VGS=0V,
-
30
-
ns
dI/dt=-100A/µs
-
21
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP40P03GP
100
120
T C = 25 C
100
TC=150oC
-7.0V
80
60
-5.0V
-4.5V
40
-7.0V
80
-ID , Drain Current (A)
-ID , Drain Current (A)
-10V
-10V
o
60
-5.0V
40
-4.5V
20
20
V G = -3.0 V
V G = -3.0 V
0
0
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
50
I D =-1 8 A
V G =-10V
I D = -10 A
T C =25 ℃
40
Normalized RDS(ON)
RDS(ON) (mΩ )
1.4
30
1.2
1.0
0.8
0.6
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
18
15
Normalized -VGS(th) (V)
1.2
-IS(A)
12
o
o
T j =150 C
9
T j =25 C
6
1.0
0.8
0.6
3
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40P03GP
f=1.0MHz
10000
V DS =- 24 V
I D =-1 8 A
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
C iss
4
C oss
C rss
2
100
0
0
5
10
15
20
25
1
30
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000.0
100.0
100us
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
1ms
10.0
10ms
100ms
1s
DC
T C =25 o C
Single Pulse
1.0
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
L5
c1
D
L4
b1
L3
L
c
b
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
40P03GP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence