A-POWER AP4002P

AP4002S/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
BVDSS
600V
RDS(ON)
5Ω
ID
2A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for power applications.The
through-hole version (AP4002P) are available for low-profile applications.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Rating
Units
VDS
Symbol
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
2
A
8
A
20
W
0.16
W/℃
20
mJ
2
A
Parameter
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
6.25
℃/W
62
℃/W
201019072-1/4
AP4002S/P
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
600
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.0A
-
-
5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.0A
-
1.5
-
S
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
-
±1
uA
ID=2A
-
12
19
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
52
-
ns
tf
Fall Time
RD=200Ω
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
IS=2A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.2
-
µC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP4002S/P
2
2
o
10V
7.0V
6.0V
ID , Drain Current (A)
1.6
o
10V
7.0V
6.0V
5.0V
T C =150 C
1.6
ID , Drain Current (A)
T C =25 C
1.2
5.0V
0.8
V G =4.5V
0.4
1.2
0.8
V G =4.0V
0.4
0
0
0
2
4
6
8
10
0
10
20
30
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I D =1.0A
V G =10V
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
-50
150
T j , Junction Temperature ( o C)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
1.4
Normalized VGS(th) (V)
IS (A)
8
6
T j = 150 o C
T j = 25 o C
4
1.2
1
0.8
2
0.6
0
0.4
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP4002S/P
f=1.0MHz
10000
12
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
14
I D =2A
V DS =480V
100
C oss
6
C rss
4
2
0
1
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
100us
ID (A)
1
1ms
10ms
100ms
1s
DC
0
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
4002S
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
φ
L2
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
e
----
2.54
----
L1
L5
c1
D
L4
b1
L3
Millimeters
SYMBOLS
L
c
b
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
4002P
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence