New Product V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 V30120S 2 3 VF30120S PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. A NC 1 VB30120S NC 3 VI30120S K HEATSINK A 2 PIN 1 PIN 2 PIN 3 K Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 120 V IFSM 300 A VF at IF = 30 A 0.74 V TJ max. 150 °C MECHANICAL DATA MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30120S VF30120S VB30120S VI30120S UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH EAS 180 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG - 40 to + 150 °C Operating junction and storage temperature range Document Number: 88974 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IR = 1.0 mA Breakdown voltage IF = 5 A IF = 15 A IF = 30 A Instantaneous forward voltage (1) SYMBOL TYP. VBR TA = 25 °C MAX. UNIT 120 (minimum) - V 0.50 0.70 0.99 1.10 0.82 TA = 25 °C V VF IF = 5 A IF = 15 A IF = 30 A TA = 125 °C 0.43 0.60 0.74 VR = 90 V TA = 25 °C TA = 125 °C 18 12 - µA mA VR = 120 V TA = 25 °C TA = 125 °C 22 500 35 µA mA Reverse current (2) IR Notes (1) (2) Pulse test: 300 µs pulse width, 1 % duty cycle Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30120S VF30120S VB30120S VI30120S UNIT RθJC 1.6 4 1.6 1.6 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.88 4W 50/tube Tube TO-220AB V30120S-E3/4W ITO-220AB VF30120S-E3/4W 1.76 4W 50/tube Tube TO-263AB VB30120S-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30120S-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30120S-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 Resistive or Inductive Load D = 0.5 35 V(B,I)30120S Average Power Loss (W) Average Forward Rectified Current (A) 40 30 25 VF30120S 20 15 10 D = 0.3 20 D = 0.2 D = 1.0 15 D = 0.1 T 10 5 5 D = 0.8 25 D = tp/T tp Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88974 Revision: 24-Jun-09 New Product V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.2 0.4 0.6 0.8 1.0 1.2 1 V(B,I)30120S 0.1 0.01 0.1 0 Junction to Case 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 VF30120S 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 88974 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 0.250 (6.35) MIN. 30° (TYP.) (REF.) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) PIN 1 PIN 2 PIN 3 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88974 Revision: 24-Jun-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000