AP6925GY
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL MOSFET WITH SCHOTTKY
DIODE
D
▼ Low Gate Charge
NC
K
▼ Surface Mount Package
G
▼ RoHS Compliant
SOT-26
BVDSS
-16V
RDS(ON)
150mΩ
ID
S
- 1.6A
A
D
A
S
K
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra lower on-resistance and
cost-effectiveness.
G
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-16
V
VKA
Reverse Voltage (Schottky)
20
V
Gate-Source Voltage
VGS
o
ID@TA=25 C
o
ID@TA=70 C
+8
V
3
-1.6
A
3
-1.2
A
-6
A
0.55
W
W/℃
o
C
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
o
PD@TA=25 C
Total Power Dissipation
TSTG
Linear Derating Factor
Storage Temperature Range
0.005
-55 to125
TJ
Operating Junction Temperature Range
-55 to 125
o
C
Thermal Data
Symbol
Rthj-a
Parameter
Value
Maximum Thermal Resistance, Junction-ambient
3
3
Maximum Thermal Resistance, Junction-ambient (Schottky)
Data and specifications subject to change without notice
Unit
180
o
C/W
180
o
C/W
1
200808072
AP6925GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-16
-
-
V
-
-0.03
-
V/℃
VGS=-4.5V, ID=-1.6A
-
-
150
mΩ
VGS=-2.5V, ID=-1.2A
-
-
200
mΩ
-0.3
-
-1
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-1.6A
-
1.6
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-12V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+8V
-
-
+100
nA
ID=-1.6A
-
6
10
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-12V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-10V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
19
-
ns
tf
Fall Time
RD=10Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=-10V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
9.5
15
Ω
Min.
Typ.
-
-
Min.
Typ.
IF=500mA
-
-
0.45
V
IF=1A
-
-
0.5
V
Vr=16V
-
-
400
uA
Source-Drain Diode
Symbol
Parameter
2
VSD
Forward On Voltage
Test Conditions
IS=-1.6A, VGS=0V
Max. Units
-1.2
V
Schottky Characteristics@Tj=25oC
Symbol
VF
Ir
Parameter
Forward Voltage Drop
Reverse Leakage Current
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<10sec ; 240oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6925GY
6
6
-50V
- 4 .0V
- 3 .0V
- 2.5 V
V G = - 2.0 V
-ID , Drain Current (A)
T A = 25 C
4
T A =125 o C
5
-ID , Drain Current (A)
o
2
4
- 5.0 V
- 4 .0V
- 3 .0V
- 2 .5V
V G = - 2.0 V
3
2
1
0
0
0
0.5
1
1.5
0
2
1
2
2
3
3
4
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
1.4
I D =- 1.6 A
V G = -4.5 V
I D = - 1. 2 A
o
T A =25 C
1.2
Normalized RDS(ON)
175
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
150
125
1.0
0.8
0.6
100
0
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
-25
0
25
50
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
180
2.0
1.6
160
o
o
-IS(A)
1.2
T j =25 C
RDS(ON) (mΩ)
T j =125 C
0.8
V GS =-2.5V
140
V GS =-4.5V
120
0.4
0.0
100
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
2
4
6
-I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP6925GY
f=1.0MHz
10
1000
-VGS , Gate to Source Voltage (V)
C iss
8
C (pF)
V DS = -12V
I D = -1.6A
6
100
C oss
4
C rss
2
0
10
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
10
1ms
-ID (A)
1
10ms
0.1
100ms
T A =25 o C
Single Pulse
1s
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 240℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
1
1
20V
0.1
IF , Forward Current (A)
IR , Reverse Current (mA)
10
16V
0.01
T j = 1 25 o C
T j = 25 o C
0.1
0.001
25
50
75
100
125
o
T j , Junction Temperature ( C)
Fig 1. Reverse Leakage Current
v.s. Junction Temperature
0
0.2
0.4
0.6
0.8
V F , Forward Voltage Drop (V)
Fig 2. Forward Voltage Drop
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SOT-26
G
L
L
Millimeters
C
A
SYMBOLS
MIN
NOM
MAX
A
2.70
2.90
3.10
B
2.60
2.80
3.00
C
1.40
1.60
1.80
D
0.30
0.43
0.55
E
0.00
0.05
0.10
B
D
H
1.20REF
G
1.90REF
I
0.12REF
J
0.37REF
L
0.95REF
H
E
I
1.All Dimension Are In Millimeters.
J
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SOT-26
Part Number : YD
YDYY
Date Code
YY:2004,2008,2012…
YY:2003,2007,2011…
YY:2002,2006,2010…
YY:2001,2005,2009…
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