MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors http://onsemi.com D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM Features • Low Collector−Emitter Saturation Voltage − • • • • • • VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol Value Unit VCEO 80 Vdc VEB 5 Vdc IC 10 20 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg 50 0.4 W W/°C 2.0 0.016 W W/°C −55 to 150 °C THERMAL CHARACTERISTICS Characteristic x A Y WW G B4xH11G AYWW = 4 or 5 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION MAXIMUM RATINGS Rating D2PAK CASE 418B STYLE 1 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W Device MJB44H11G Package Shipping† D2PAK 50 Units/Rail (Pb−Free) MJB44H11T4G D2PAK (Pb−Free) 800/Tape & Reel NJVMJB44H11T4G D2PAK (Pb−Free) 800/Tape & Reel MJB45H11G D2PAK (Pb−Free) 50 Units/Rail MJB45H11T4G D2PAK (Pb−Free) 800/Tape & Reel NJVMJB45H11T4G D2PAK (Pb−Free) 800/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 5 1 Publication Order Number: MJB44H11/D MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 80 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 mA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc hFE 60 − − − 40 − − − − 130 230 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Ccb MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 pF fT MHz SWITCHING TIMES Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc) Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) 1.0 0.7 0.5 tf MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 ns 0.1 0.1 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.03 0.01 0.01 ns 0.2 0.2 0.02 ts MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 ns D = 0.5 0.3 0.07 0.05 td + tr MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 Figure 1. Thermal Response http://onsemi.com 2 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50 30 20 1.0 ms 100 ms 10 5.0 3.0 2.0 1.0 10 ms TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.0 ms 0.5 0.3 0.2 0.1 1.0 5.0 7.0 10 2.0 3.0 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMPS) 100 TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 140 160 MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25°C 10 0.1 1 VCE = 4 V 100 1V TJ = 25°C 10 0.1 10 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. MJB44H11 DC Current Gain Figure 5. MJB45H11 DC Current Gain 1000 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C TJ = 125°C 25°C 100 -40°C VCE = 1 V 10 0.1 1 1 10 Figure 6. MJB44H11 Current Gain versus Temperature Figure 7. MJB45H11 Current Gain versus Temperature 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 0.1 IC, COLLECTOR CURRENT (AMPS) VBE(sat) 0.8 0.6 0 0.1 VCE = 1 V IC, COLLECTOR CURRENT (AMPS) 1 0.2 100 10 10 1.2 0.4 25°C -40°C IC/IB = 10 TJ = 25°C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 1 0.8 0.6 0.4 IC/IB = 10 TJ = 25°C VCE(sat) 0.2 0 0.1 10 VBE(sat) Figure 8. MJB44H11 On−Voltages 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJB45H11 On−Voltages http://onsemi.com 4 10 MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) M T B M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR VARIABLE CONFIGURATION ZONE N R P U L M DIM A B C D E F G H J K L M N P R S V L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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