STL160N3LLH6 N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS(on) max ID STL160N3LLH6 30 V 0.0013 Ω 35 A (1) 1. The value is rated according Rthj-pcb 1 2 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 3 4 PowerFLAT™ 5x6 Applications ■ Figure 1. Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Internal schematic diagram $ $ $ $ ' 3 3 3 "OTTOM6IEW 4OP6IEW !-6 Table 1. Device summary Order code Marking Package Packaging STL160N3LLH6 160N3LLH6 PowerFLAT™ 5x6 Tape and reel November 2011 Doc ID 18223 Rev 2 1/16 www.st.com 16 Contents STL160N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 Doc ID 18223 Rev 2 STL160N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 160 A ID (1) Drain current (continuous) at TC = 100 °C 100 A ID (2) Drain current (continuous) at Tpcb = 25 °C 35 A ID (2) Drain current (continuous) at Tpcb=100 °C 21.8 A (3) Drain current (pulsed) 140 A Total dissipation at TC = 25 °C 80 W Total dissipation at Tpcb = 25 °C 4 W 0.03 W/°C -55 to 150 °C Value Unit Thermal resistance junction-case (drain, steady state) 1.56 °C/W Thermal resistance junction-ambient 31.3 °C/W Value Unit ID (1) IDM PTOT (1) PTOT (3) Derating factor Tj Operating junction temperature Storage temperature Tstg 1. The value is rated according to Rthj-c . 2. The value is rated according to Rthj-pcb. 3. Pulse width limited by safe operating area. Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj max) 35 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV ) 900 mJ Doc ID 18223 Rev 2 3/16 Electrical characteristics 2 STL160N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 5. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V, VDS = 30 V at TC = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 17.5 A VGS= 4.5 V, ID= 17.5 A V(BR)DSS Table 6. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V Ω Ω 0.0011 0.0016 0.0013 0.0020 Min. Typ. Max. Unit - pF pF pF Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 - 6375 1230 675 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 35 A VGS =4.5 V (see Figure 14) - 61.5 20 24 - nC nC nC Gate input resistance f=1 MHz gate DC bias = 0 test signal level = 20 mV open drain - 1.4 - Ω RG 4/16 On/off states Doc ID 18223 Rev 2 STL160N3LLH6 Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 17.5 A, RG=4.7 Ω, VGS=10 V (see Figure 13) Min. Typ. Max. Unit - 18.5 32 107.5 54 - ns ns ns ns Min. Typ. Max. Unit Source drain diode Parameter Test conditions Source-drain current - 35 A ISDM(1) Source-drain current (pulsed) - 140 A VSD(2) Forward on voltage ISD = 35 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs, VDD=25 V - trr Qrr IRRM 37.2 36 1.9 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5%. Doc ID 18223 Rev 2 5/16 Electrical characteristics STL160N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Thermal impedance Figure 5. Transfer characteristics AM08599v1 ID (A) 100 Figure 3. Tj=150°C Tc=25°C Single pulse is ea ar (on) is th RDS in x on ma y ati er d b p O ite Lim 10 10ms 1 100ms 1s 0.1 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM08600v1 ID (A) VGS=10V 180 AM08601v1 ID (A) 140 VDS=2V 160 120 140 100 120 4V 100 80 3V 80 60 60 40 40 20 20 0 0 Figure 6. 0.5 1.0 1.5 2.0 Normalized BVDSS vs temperature AM08602v1 BVDSS (norm) Figure 7. 1.15 1.05 1.10 1.00 1.05 0.95 1.00 -25 25 75 125 175 TJ(°C) 1 2 3 4 0.95 0 Doc ID 18223 Rev 2 5 6 7 8 9 10 VGS(V) Static drain-source on resistance AM08603v1 RDS(on) (Ω) 1.10 0.90 -75 6/16 0 0 VDS(V) 2.5 VGS=10V 5 10 15 20 25 30 35 ID(A) STL160N3LLH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations AM08604v1 VGS (V) AM08605v1 C (pF) 9000 VDD=15V ID=35A 12 8000 10 7000 Ciss 6000 8 5000 6 4000 3000 4 2000 Coss 2 0 0 20 40 60 80 100 120 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM08606v1 VGS(th) (norm) 1000 0 0 Crss 5 10 15 20 25 30 VDS(V) Figure 11. Normalized on resistance vs temperature AM08607v1 RDS(on) (norm) 1.8 1.2 1.6 1.0 1.4 0.8 1.2 1.0 0.6 0.8 0.4 0.2 -75 0.6 25 -25 75 125 175 TJ(°C) 0.4 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM08608v1 VSD (V) TJ=-55°C 1.0 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0 5 10 15 20 25 30 35 ISD(A) Doc ID 18223 Rev 2 7/16 Test circuits 3 STL160N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 Doc ID 18223 Rev 2 10% AM01473v1 STL160N3LLH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 18223 Rev 2 9/16 Package mechanical data Table 9. STL160N3LLH6 PowerFLAT™ 5x6 type C-B mechanical data mm Dim. Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 b 0.20 0.35 0.40 D 5.00 D1 4.75 D2 4.15 4.20 E 6.00 E1 5.75 4.25 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e L 10/16 0.47 1.27 0.70 0.80 Doc ID 18223 Rev 2 0.90 STL160N3LLH6 Package mechanical data Figure 19. PowerFLAT™ 5x6 type C-B drawing Bottom View e/2 e 1 PIN 1 IDENTIFICATION EXPOSED PAD E2 E4 b 8x D2/2 D2 Top View D/2 E/2 E1 PIN 1 IDENTIFICATION E 1 D1 D C 0.1 A3 SEATING PLANE A 0.08 A1 C C 7286463_Rev_H Doc ID 18223 Rev 2 11/16 Package mechanical data Table 10. STL160N3LLH6 PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. A 0.80 1.00 A1 0.02 0.05 A2 b 12/16 Max. 0.25 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 Doc ID 18223 Rev 2 STL160N3LLH6 Package mechanical data Figure 20. PowerFLAT™ 5x6 type S-C mechanical data 4OPVIEW "OTTOMVIEW 3IDEVIEW ?$?TYPE# Doc ID 18223 Rev 2 13/16 Package mechanical data STL160N3LLH6 Figure 21. PowerFLAT™ 5x6 recommended footprint (dimensions in mm) 5.35 0.95 0.98 6.26 3.86 4.33 4.41 1.27 0.62 Footprint 14/16 Doc ID 18223 Rev 2 STL160N3LLH6 5 Revision history Revision history Table 11. Document revision history Date Revision Changes 10-Nov-2010 1 First release. 10-Nov-2011 2 Section 4: Package mechanical data has been updated. Minor text changes. Doc ID 18223 Rev 2 15/16 STL160N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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