IRF IRF5803TRPBF

PD-95262B
IRF5803PbF
HEXFET® Power MOSFET
l
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Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
VDSS
RDS(on) max (mW)
ID
-40V
[email protected] = -10V
[email protected] = -4.5V
-3.4A
-2.7A
A
D
D
1
6
D
2
5
D
G
3
4
S
TSOP-6
Top View
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-40
-3.4
-2.7
-27
2.0
1.3
16
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
04/20/10
IRF5803PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
–––
25
4.5
3.5
43
550
88
50
1110
93
73
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
112
VGS = -10V, ID = -3.4 ‚
mΩ
190
VGS = -4.5V, ID = -2.7A ‚
-3.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -3.4A
-10
VDS = -32V, VGS = 0V
µA
-25
VDS = -32V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
37
ID = -3.4A
6.8
nC
VDS = -20V
5.3
VGS = -10V
–––
VDD = -20V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -10V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 100kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-27
–––
–––
–––
–––
27
34
-1.2
40
50
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ Surface mounted on 1 in square Cu board
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5803PbF
100
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
100
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
10
1
0.1
20µs PULSE WIDTH
Tj = 25°C
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
1
-2.7V
0.1
20µs PULSE WIDTH
Tj = 125°C
-2.7V
0.01
0.01
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
10
TJ = 150° C
1
V DS = -25V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
100
Fig 2. Typical Output Characteristics
100
3.0
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
2.0
1
8.0
2.0
ID = -3.4A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF5803PbF
VGS = 0V,
f = 100 KHZ
C iss
= Cgs + Cgd ,
SHORTED
Cds
Crss = Cgd
Coss = Cds + Cgd
1500
C, Capacitance(pF)
12
-VGS , Gate-to-Source Voltage (V)
2000
Ciss
1000
500
Coss
ID = -3.4A
10
8
6
4
2
Crss
0
0
1
10
-
100
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
V DS=-32V
V DS=-20V
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
-VSD ,Source-to-Drain Voltage (V)
1.6
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1
1msec
TA = 25°C
TJ = 150°C
Single Pulse
10msec
0.1
1
10
100
-VDS , Drain-toSource Voltage (V)
4
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF5803PbF
3.5
3.0
-ID , Drain Current (A)
RD
VDS
VGS
D.U.T.
RG
2.5
-
+
2.0
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
10%
150
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.20
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
IRF5803PbF
0.15
ID = -3.4A
0.10
0.05
0.00
4.0
8.0
12.0
16.0
0.40
VGS = -4.5V
0.30
0.20
VGS = -10V
0.10
0.00
0.0
5.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10.0
15.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF5803PbF
30
2.8
25
20
Power (W)
-VGS(th) ( V )
ID = -250µA
2.4
15
10
2.0
5
0
1.6
-75
-50
-25
0
25
50
75
100
125
TJ , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF5803PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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8
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF5803PbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010
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9