IRF IRLR6225PBF

PD - 97594
IRLR6225PbF
HEXFET® Power MOSFET
VDS
20
V
RDS(on) max
4.0
mΩ
5.2
mΩ
Qg (typical)
48
nC
RG (typical)
2.2
ID
42h
Ω
A
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
D
D
S
G
Applications
G
S
D-Pak
IRLR6225PbF
G
D
S
Gate
Drain
Source
• Battery Protection Switch
Features and Benefits
Features
Industry-Standard Pinout
results in
Compatible with Existing Surface Mount Techniques
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRLR6225PbF
IRLR6225TRPbF
D-PAK
D-PAK
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
75
2000
Tape and Reel
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @ TC = 100°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
Soldering Temperature, for 10 seconds
Max.
20
±12
100
63
h
h
400
63
25
0.5
-55 to + 150
Units
V
A
W
W/°C
°C
300 (1.6mm from case)
Notes  through † are on page 8
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1
11/15/2010
IRLR6225PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Output Charge
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
205
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.6
3.2
4.2
0.8
-4.0
–––
–––
–––
–––
–––
48
2.6
3.6
19
23
23
21
Max. Units
Conditions
–––
V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
4.0
VGS = 4.5V, ID = 21A
mΩ
5.2
VGS = 2.5V, ID = 17A
1.1
V
VDS = VGS, ID = 50µA
––– mV/°C
1.0
VDS = 16V, VGS = 0V
µA
150
VDS = 16V, VGS = 0V, TJ = 125°C
100
VGS = 12V
nA
-100
VGS = -12V
–––
S VDS = 10V, ID = 21A
72
–––
VDS = 10V
–––
VGS = 4.5V
nC
ID = 17A
–––
–––
See Fig.17 & 18
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
2.2
9.7
37
63
52
3770
915
650
–––
–––
–––
–––
–––
–––
–––
–––
e
e
Ω
ns
pF
VDD = 10V, VGS = 4.5V
ID = 17A
RG=1.8Ω
See Fig.15
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
Typ.
–––
–––
–––
d
c
Max.
170
17
6.3
Units
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
Typ.
Max. Units
h
–––
–––
100
c
–––
–––
h
400
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 17A, VGS = 0V
TJ = 25°C, IF = 17A, VDD = 10V
di/dt = 200A/µs
–––
–––
1.2
V
–––
35
53
ns
–––
57
86
nC
Time is dominated by parasitic Inductance
e
e
Thermal Resistance
RθJC
RθJA
RθJA
2
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
f
g
g
Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
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IRLR6225PbF
1000
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
100
100
1.5V
BOTTOM
1.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
10
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
T J = 150°C
10
T J = 25°C
1
VDS = 10V
≤60µs PULSE WIDTH
0.1
0.0
1.0
2.0
3.0
4.0
ID = 42A
VGS = 4.5V
1.4
1.2
1.0
0.8
0.6
5.0
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
100000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 17A
C oss = C ds + C gd
10000
Ciss
Coss
Crss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
12.0
VDS= 16V
VDS= 10V
10.0
VDS= 4.0V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
25
50
75
100
125
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRLR6225PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 150°C
100
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
Limited by
Package
10
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
DC
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
VSD, Source-to-Drain Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1.1
VGS(th) , Gate threshold Voltage (V)
100
Limited By Package
80
ID, Drain Current (A)
1msec
60
40
20
0
1.0
0.9
0.8
ID = 50µA
0.7
0.6
0.5
0.4
0.3
0.2
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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700
8
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to -Source On Resistance (mΩ)
IRLR6225PbF
ID = 17A
7
6
5
TJ = 125°C
4
3
TJ = 25°C
2
ID
5.9A
8.6A
BOTTOM 17A
600
TOP
500
400
300
200
100
0
1
0
2
4
6
8
10
12
14
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
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I AS
0.01Ω
tp
10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
5
IRLR6225PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 18. Gate Charge Waveform
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IRLR6225PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRLR6225PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
Indus trial
(per JE DE C JE S D47F
D-PAK
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.2mH, RG = 50Ω, IAS = 17A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continouous current based on maximum allowable junction temperature. Package is limited to 42A by
production test capability.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/2010
8
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