IRF IRFR540ZPBF

PD - 96141B
IRFR540ZPbF
IRFU540ZPbF
Features
l
l
l
l
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 28.5mΩ
G
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
ID = 35A
S
D-Pak
IRFR540ZPbF
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
35
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
140
P D @T C = 25°C Power Dissipation
V GS
Linear Derating Factor
Gate-to-Source Voltage
d
E AS (Thermally limited) Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E AS (Tested )
c
IAR
Avalanche Current
E AR
TJ
Repetitive Avalanche Energy
T STG
Storage Temperature Range
h
Parameter
RθJA
Junction-to-Ambient
j
mJ
A
°C
Mounting Torque, 6-32 or M3 screw
Junction-to-Ambient (PCB mount)
39
-55 to + 175
y
ij
300
y
10 lbf in (1.1N m)
Thermal Resistance
RθJA
W
W/°C
V
mJ
Reflow Soldering Temperature, for 10 seconds
j
91
0.61
± 20
75
Operating Junction and
Junction-to-Case
A
See Fig.12a, 12b, 15, 16
g
RθJC
Units
25
c
IDM
I-Pak
IRFU540ZPbF
Typ.
Max.
–––
1.64
–––
40
–––
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
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1
09/30/10
IRFR/U540ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
100
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.092
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
22.5
28.5
mΩ
VGS = 10V, ID = 21A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 50µA
gfs
Forward Transconductance
28
–––
–––
S
VDS = 25V, ID = 21A
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
39
59
Qgs
Gate-to-Source Charge
–––
11
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 50V
tr
Rise Time
–––
42
–––
ID = 21A
td(off)
Turn-Off Delay Time
–––
43
–––
tf
Fall Time
–––
34
–––
VGS = 10V
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
IGSS
–––
V
Conditions
V(BR)DSS
Internal Source Inductance
–––
7.5
e
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
ID = 21A
nC
ns
nH
LS
VGS = 0V, ID = 250µA
VDS = 50V
RG = 13 Ω
e
e
D
–––
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
G
S
Ciss
Input Capacitance
–––
1690
–––
Coss
Output Capacitance
–––
180
–––
Crss
Reverse Transfer Capacitance
–––
100
–––
Coss
Output Capacitance
–––
720
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
110
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
190
–––
VGS = 0V, VDS = 0V to 80V
VDS = 25V
pF
ƒ = 1.0MHz
f
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
35
ISM
(Body Diode)
Pulsed Source Current
–––
–––
140
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 21A, VGS = 0V
trr
Reverse Recovery Time
–––
32
48
ns
TJ = 25°C, IF = 21A, VDD = 50V
Qrr
Reverse Recovery Charge
–––
40
60
nC
di/dt = 100A/µs
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
showing the
integral reverse
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFR/U540ZPbF
1000
100
BOTTOM
1000
≤60µs PULSE WIDTH
TOP
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
≤60µs PULSE WIDTH
Tj = 175°C
4.5V
1
1
0.1
1
10
100
0.1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
70
Gfs , Forward Transconductance (S)
ID, Drain-to-Source Current(Α)
1
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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TJ = 25°C
60
50
40
TJ = 175°C
30
20
VDS = 10V
380µs PULSE WIDTH
10
0
8
0
10
20
30
40
50
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3
IRFR/U540ZPbF
3000
20
2500
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
2000
Ciss
1500
1000
500
Coss
Crss
0
ID= 21A
VDS = 80V
VDS= 50V
VDS= 20V
16
12
8
4
0
1
10
0
100
1000.0
ID, Drain-to-Source Current (A)
1000
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
30
40
50
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
1.4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U540ZPbF
2.5
ID = 21A
VGS = 10V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain Current (A)
40
30
20
10
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
TC , CaseTemperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
2.626
0.000052
0.6611
0.001297
0.7154
0.01832
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
DRIVER
L
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
IRFR/U540ZPbF
160
I D
6.5A
9.4A
BOTTOM 21A
TOP
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
4.5
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
VGS(th) Gate threshold Voltage (V)
10 V
ID = 1.0mA
ID = 250µA
ID = 50µA
4.0
3.5
3.0
2.5
2.0
1.5
VCC
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage vs. Temperature
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IRFR/U540ZPbF
100
Avalanche Current (A)
Duty Cycle = Single Pulse
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
40
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 21A
30
20
10
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
IRFR/U540ZPbF
D.U.T
Driver Gate Drive
ƒ
+
‚
„
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
8
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IRFR/U540ZPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH AS SEMBLY
LOT CODE 1234
AS SEMBLED ON WW 16, 2001
IN THE ASS EMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line position
indicates "Lead-Free"
IRFR120
12
116A
34
AS SEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 16
LINE A
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
OR
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFR120
12
ASS EMBLY
LOT CODE
34
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
YEAR 1 = 2001
WEEK 16
A = AS SEMBLY S ITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRFR/U540ZPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WIT H AS SEMBLY
LOT CODE 5678
AS SEMBLED ON WW 19, 2001
IN THE ASS EMB LY LINE "A"
INT ERNATIONAL
RECTIF IER
LOGO
PART NUMBER
IRFU120
119A
56
78
ASS EMBLY
LOT CODE
Note: "P" in ass embly line pos ition
indicates Lead-Free"
DAT E CODE
YEAR 1 = 2001
WEEK 19
LINE A
OR
INT ERNATIONAL
RECTIFIER
LOGO
PART NUMB ER
IRFU120
56
ASSEMBLY
LOT CODE
78
DAT E CODE
P = DESIGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
YEAR 1 = 2001
WEEK 19
A = ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFR/U540ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
„ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.17mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 21A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
tested to this value in production.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
ˆ Rθ is measured at TJ approximately 90°C
 Repetitive rating; pulse width limited by
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
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11