PD - 9.1506
PRELIMINARY
IRFR/U9024N
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = -55V
RDS(on) = 0.175Ω
G
ID = -11A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D -P a k
T O -2 52 A A
I-P a k
TO -2 5 1 A A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.3
50
110
°C/W
6/26/97
IRFR/U9024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-55
–––
–––
-2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
55
23
37
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
350
170
92
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.175
Ω
VGS = -10V, ID = -6.6A
-4.0
V
VDS = VGS, I D = -250µA
–––
S
VDS = -25V, ID = -7.2A
-25
VDS = -55V, VGS = 0V
µA
-250
VDS = -44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
19
ID = -7.2A
5.1
nC
VDS = -44V
10
VGS = -10V, See Fig. 6 and 13
–––
VDD = -28V
–––
ID = -7.2A
ns
–––
RG = 24Ω
–––
RD = 3.7Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 2.8mH
RG = 25Ω, IAS = -6.6A. (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ 240A/µs, VDD ≤ V (BR)DSS,
TJ ≤ 150°C
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -11
showing the
A
G
integral reverse
––– ––– -44
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -7.2A, V GS = 0V
––– 47
71
ns
TJ = 25°C, IF = -7.2A
––– 84 130
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9024N
-I D , Drain-to-Source Current (A)
TOP
BOTTOM
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
-I D , Drain-to-Source Current (A)
100
10
-4.5V
1
BOTTOM
10
-4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -25V
20µs PULSE WIDTH
5
6
7
8
9
10
100
Fig 2. Typical Output Characteristics
100
0.1
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
4
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
ID = -11A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFR/U9024N
20
V GS
C is s
C rs s
C os s
C , C a p a c ita n c e (p F )
600
500
C is s
400
C os s
=
=
=
=
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
-V G S , G a te -to -S o u rc e V o lta g e (V )
700
300
C rs s
200
100
0
10
V DS = -44 V
V DS = -28 V
16
12
8
4
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
0
A
1
I D = -7 .2A
0
100
5
10
15
20
A
25
Q G , Total G ate C harge (nC)
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
100
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 25 °C
1
0.1
0.2
VGS = 0 V
0.6
0.9
1.3
-VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1.6
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRFR/U9024N
12.0
RD
VDS
VGS
-I D , Drain Current (A)
D.U.T.
RG
9.0
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0
Fig 10a. Switching Time Test Circuit
3.0
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
T C , Case Temperature
125
150
( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
IRFR/U9024N
L
VDS
- V
V DD
+ DD
D .U .T
RG
IA S
- 20V
tp
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
120
ID
-3.0A
-4.2A
BOTTOM -6.6A
TOP
100
80
60
40
20
0
25
50
75
100
125
Starting T J, Junction Temperature
150
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFR/U9024N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V GS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[ISD ]
IRFR/U9024N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
10.42 (.410)
9.40 (.370)
LEA D AS SIG NME NT S
1 - G AT E
3
0.51 (.020)
MIN.
-B 1.52 (.060)
1.15 (.045)
4 - DRA IN
3X
2X
1.14 (.045)
0.76 (.030)
2 - DRA IN
3 - S OUR CE
0.89 (.035)
0.64 (.025)
0.25 ( .010)
0.58 (.023)
0.46 (.018)
M A M B
NOT ES:
2.28 (.090)
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS ION : INCH.
3 CO NFO RMS T O JEDE C O UTLINE TO -252AA .
4.57 (.180)
4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP ,
SO LDER DIP MA X. +0.16 (.006).
Part Marking Information
TO-252AA (D-Pak)
E X A M P LE : T H IS IS A N IR F R 120
W IT H A S S E MB L Y
LOT C OD E 9U 1P
IN T E R N A T IO N A L
R E CT IF IE R
LO G O
A
IR F R
12 0
9U
A S S E MB L Y
L O T C OD E
F IR S T P O R T ION
OF P A R T N U MB E R
1P
S E C O N D P O R T ION
OF PART NUMBER
IRFR/U9024N
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 ( .050)
0.88 ( .035)
5.46 (.215)
5.21 (.205)
LEAD AS SIG NMENT S
4
1 - G AT E
2 - DRA IN
6.45 (.245)
5.68 (.224)
3 - S OURCE
4 - DRA IN
6.22 ( .245)
5.97 ( .235)
1.52 ( .060)
1.15 ( .045)
1
2
3
-B -
NOT ES :
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982.
2.28 (.090)
1.91 (.075)
2 CO NTRO LLIN G DIMENS ION : INCH.
3 CO NFO RMS TO J EDE C O UT LINE TO -252AA .
9.65 (.380)
8.89 (.350)
4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP ,
SO LDER DIP MA X. +0.16 (.006).
3X
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2X
M A M B
0.58 (.023)
0.46 (.018)
Part Marking Information
TO-251AA (I-Pak)
E X A M P LE : TH IS IS A N IR F U1 20
W IT H A S S E M B LY
LO T C O D E 9U 1P
IN TE RN A T IO N A L
R E C T IF IE R
LO GO
IR F U
120
9U
A S S E M B LY
LO T C O D E
F IR S T P O RT IO N
O F P A R T N UM B E R
1P
S E C O N D P O R T ION
OF PART NUMBER
IRFR/U9024N
Tape & Reel Information
TO-252AA
TR
TRR
16 .3 ( .64 1 )
15 .7 ( .61 9 )
1 2 .1 ( .4 76 )
1 1 .9 ( .4 69 )
F E E D D IR E C TIO N
TRL
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C TIO N
N O T ES :
1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 .
1 3 IN C H
16 m m
NO T ES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
6/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/