ATF-53189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF‑53189 is a single-voltage high linearity, low noise E‑pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, m edium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. • Single voltage operation ATF-53189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general-purpose discrete E‑pHEMT amplifiers that require medium power and high linearity. All devices are 100% RF and DC tested. • SOT 89 standard package • High Linearity and Gain • Low Noise Figure • Excellent uniformity in product specifications • Point MTTF > 300 years[2] • MSL-1 and lead-free • Tape-and-Reel packaging option available Specifications Pin Connections and Package Marking 2 GHz, 4.0V, 135 mA (Typ.) • 40.0 dBm Output IP3 • 23.0 dBm Output Power at 1dB gain compression 3GX #1 #2 RFin GND Top View • 0.85 dB Noise Figure • 15.5 dB Gain #3 RFout #3 #2 RFout GND Bottom View Notes: Package marking provides orientation and identification: “3G” = Device Code “x” = Month code indicates the month of manufacture. D = Drain S = Source G = Gate #1 RFin • 46% PAE at P1dB • LFOM[3] 12.7 dB Applications • Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure • Driver Amplifier for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power. ATF-53189 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum Vds Drain–Source Voltage[2]V 7 Vgs Gate–Source Voltage V -5 to 1.0 Vgd Gate Drain Voltage[2] V -5 to 1.0 I Drain Current mA300 Igs Gate Current mA P Total Power Dissipation W 1.0 Pin max. RF Input Power dBm +24 Tch Channel Temperature °C 150 Tstg Storage Temperature °C -65 to 150 [2] ds [2] diss Thermal Resistance[2,4] θch-b = 70°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature TB is 25°C. Derate 14.30 mW/°C for TB > 80°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. 20 [3] ATF-53189 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified. Symbol Parameters and Test Conditions Units Vgs Min. Typ. Max. Operational Gate Voltage Vds = 4.0V, Ids = 135 mA V— 0.65— Vth Threshold Voltage Vds = 4.0V, Ids = 8 mA V — 0.30 — Ids Drain to Source Current Vds = 4.0V, Vgs = 0V µA — 3.70 — Gm Transconductance Vds = 4.0V, Gm = ∆Ids/∆Vgs; mmho— ∆Vgs = Vgs1 – Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V 650 — Igss Gate Leakage Current NF Noise Figure Vds = 0V, Vgs = -4V µA -10.0 -0.34— f=900 MHz f=2.0 GHz f=2.4 GHz dB dB dB — — — 0.80 0.85 1.00 — 1.3 — GGain [1] f=900 MHz f=2.0 GHz f=2.4 GHz dB — 17.2 — dB 14.015.517.0 dB — 15.0 — OIP3 Output 3rd Order Intercept Point[1] f=900 MHz f=2.0 GHz f=2.4 GHz dBm — 42.0 — dBm 36.040.0— dBm — 38.6 — P1dB Output 1dB Compressed [1] f=900 MHz f=2.0 GHz f=2.4 GHz dBm dBm dBm — — — 21.7 23.0 23.2 — — PAE Power Added Efficiency f=900 MHz f=2.0 GHz f=2.4 GHz % % % — — — 33.8 46.0 49.0 — — dBc dBc — — -54.0 -64.0 — — ACLR Notes: Adjacent Channel Leakage Offset BW = 5 MHz Power Ratio [1,2] Offset BW = 10 MHz 1. Measurements at 2 GHz obtained using production test board described in Figure 1. 2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -8 dBm - Channel Integrate Bandwidth = 3.84 MHz 2 Input Matching Circuit Γ_mag=0.74 Γ_ang=-112.4° Input Output Matching Circuit Γ_mag=0.40 Γ_ang=120.0° DUT Output Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. Product Consistency Distribution Charts [1,2] 150 150 Stdev=0.08 Stdev=0.86 120 90 –3 Std FREQUENCY FREQUENCY 120 +3 Std 60 –3 Std +3 Std 60 30 30 0 90 0 36 37 38 39 40 41 42 43 44 45 .5 .6 .7 .8 1.1 150 150 Stdev=1.14 Stdev=0.22 120 90 –3 Std +3 Std 60 FREQUENCY 120 FREQUENCY 1 Figure 3. NF @ 2 GHz, 4V, 135 mA. USL = 1.30 dBm, Nominal = 0.84 dBm. Figure 2. OIP3 @ 2 GHz, 4V, 135 mA. LSL = 36 dBm, Nominal = 40 dBm. 90 –3 Std +3 Std 60 30 30 0 .9 NF (dB) OIP3 (dBm) 0 14.5 15 15.5 16 16.5 Gain (dB) Figure 4. Gain @ 2 GHz, 4V, 135 mA. LSL = 14 dBm, Nominal = 15.5 dBm, USL = 17 dBm. 19 20 21 22 23 24 25 26 P1dB (dBm) Figure 5. P1dB @ 2 GHz, 4V, 135 mA. Nominal = 23 dBm. Notes: 1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de‑embedded from actual measurements. 3 Gamma Load and Source at Optimum OIP3 Tuning Conditions The device’s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent bias. Typical Gammas at Optimum OIP3 [1] Freq (GHz) Gamma Source Mag Ang (deg) Gamma Load Mag Ang (deg) OIP3 (dBm) 0.9 0.8179 -143.28 0.0721 124.08 42.017.221.733.8 2.0 0.7411 -112.36 0.4080 119.91 41.615.623.444.2 3.9 0.6875 -94.23 0.4478 174.74 41.311.223.141.4 5.8 0.5204 -75.91 0.3525 -120.13 36.95.6 22.425.7 Note: Gain (dB) 1. Typical describes additional product performance information that is not covered by the product warranty. 400 0.9V 350 Ids (mA) 300 0.8V 250 0.7V 200 150 0.6V 100 0.5V 50 0 0 1 2 3 4 Vds (V) Figure 6. Typical IV Curve. 4 5 6 7 P1dB (dBm) PAE (%) 45 45 40 40 35 35 OIP3 (dBm) OIP3 (dBm) ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 30 30 3V 4V 5V 25 20 75 90 105 120 135 150 Ids (mA) Figure 7. OIP3 vs. Ids and Vds at 900 MHz 165 180 20 120 135 Ids (mA) Figure 8. OIP3 vs. Ids and Vds at 2 GHz 105 35 30 165 180 75 90 105 120 135 150 Ids (mA) Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz 165 180 165 180 16 15 14 3V 4V 5V 25 165 180 12 120 135 150 Ids (mA) Figure 10. Small Signal Gain vs. Ids and Vds at 900 MHz 18 12 17 10 16 8 GAIN (dB) 14 15 12 75 90 105 120 135 150 Ids (mA) Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz 75 90 105 6 4 3V 4V 5V 13 3V 4V 5V 13 19 14 3V 4V 5V 2 165 180 0 75 90 105 120 135 150 Ids (mA) Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz Note: Bias current for these charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 5 150 17 GAIN (dB) OIP3 (dBm) 90 18 40 GAIN (dB) 75 19 45 20 3V 4V 5V 25 8 35 6 GAIN (dB) 40 30 3V 4V 5V 105 120 135 Ids (mA) 150 165 Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz 30 50 30 10 20 5 10 0 -2 2 6 10 Pin (dBm) Figure 15. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=900 MHz -6 30 20 50 40 15 30 10 20 5 10 0 -14 0 10 -2 2 6 Pin (dBm) Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=900MHz -10 -6 165 180 50 40 30 10 20 5 10 0 10 -2 2 6 Pin (dBm) Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=900MHz -14 -10 -6 60 Gain_4V Pout_4V PAE_4V 25 20 50 40 15 30 10 20 5 10 0 0 2 6 10 14 Pin (dBm) Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 2 GHz -10 -6 -2 Note: Bias current for these charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 6 150 15 30 PAE (%) GAIN (dB) & Pout (dBm) 25 20 0 60 Gain_5V Pout_5V PAE_5V 120 135 Ids (mA) Gain_4V Pout_4V PAE_4V 25 40 15 -10 105 60 30 PAE (%) GAIN (dB) & Pout (dBm) 20 90 Figure 14. Small Signal Gain vs. Ids and Vds at 5.8 GHz 60 Gain_3V Pout_3V PAE_3V 25 0 -14 0 75 180 PAE (%) 90 3V 4V 5V 2 GAIN (dB) & Pout (dBm) 20 75 4 PAE (%) 25 GAIN (dB) & Pout (dBm) OIP3 (dBm) ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 15 30 10 20 5 -6 -2 2 Pin (dBm) 6 10 14 20 10 5 10 0 0 -10 50 40 15 30 10 20 5 10 0 -10 -6 -2 2 6 Pin (dBm) 10 14 18 0 20 50 40 14 18 30 10 20 5 10 -10 -6 -2 60 Gain_3V Pout_3V PAE_3V 25 20 50 40 10 5 10 0 0 5 10 15 20 20 2 6 Pin (dBm) 40 10 10 -2 20 50 30 30 -6 Figure 23. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=3.9 GHz -6 -2 2 6 10 Pin (dBm) 14 18 22 0 Figure 24. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=5.8 GHz Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 7 0 14 15 15 0 -10 10 60 30 PAE (%) GAIN (dB) & Pout (dBm) 25 6 0 2 6 10 14 18 Pin (dBm) Figure 22. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=3.9 GHz 60 Gain_5V Pout_5V PAE_5V 2 Pin (dBm) Gain_4V Pout_4V PAE_4V 25 0 Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=3.9 GHz 30 -2 30 PAE (%) GAIN (dB) & Pout (dBm) 20 -6 Figure 20. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 2 GHz 60 Gain_3V Pout_3V PAE_3V 25 40 10 Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 2 GHz 30 20 50 30 GAIN (dB) & Pout (dBm) -10 25 15 GAIN (dB) & Pout (dBm) 0 60 Gain_3V Pout_3V PAE_3V PAE (%) 40 GAIN (dB) & Pout (dBm) 20 50 PAE (%) GAIN (dB) & Pout (dBm) 25 30 PAE (%) 60 Gain_5V Pout_5V PAE_5V PAE (%) 30 ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 20 30 50 25 40 15 30 10 20 5 10 0 -6 -2 2 6 10 Pin (dBm) 14 18 20 Figure 25. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=5.8 GHz 50 40 15 30 10 20 5 10 0 0 22 60 Gain_5V Pout_5V PAE_5V -6 -2 2 6 10 Pin (dBm) 14 PAE (%) GAIN (dB) & Pout (dBm) 25 60 GAIN (dB) & Pout (dBm) Gain_4V Pout_4V PAE_4V PAE (%) 30 0 22 18 Figure 26. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=5.8 GHz ATF-53189 Typical Performance Curves, continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA, Over Temperature and Frequency 46 18 16 44 14 GAIN (dB) OIP3 (dBm) 42 40 38 -40C 25C 80C 36 34 0.5 1.5 10 10 6 2.5 4 0.5 6.5 25 45 24 P1dB (dBm) 40 35 -40C 25C 80C 25 20 0.5 1.5 1.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 29. PAE vs. Temperature and Frequency at optimum OIP3 3.5 4.5 FREQUENCY (GHz) 6.5 22 -40C 25C 80C 6.5 20 0.5 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 30. P1dB vs. Temperature and Frequency at optimum OIP3 Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 8 5.5 23 21 2.5 2.5 Figure 28. Gain vs. Temperature and Frequency at optimum OIP3 50 30 -40C 25C 80C 8 3.5 4.5 5.5 FREQUENCY (GHz) Figure 27. OIP3 vs. Temperature and Frequency at optimum OIP3 PAE (%) 12 6.5 ATF-53189 Typical Performance Curves (at 25°C unless specified otherwie), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA 20 10 -2 Pin (dBm) 2 6 GAIN (dB) & Pout (dBm) 30 Gain_4V Pout_4V PAE_4V 25 20 30 30 20 5 10 -10 -6 -2 2 Pin (dBm) 6 10 30 Gain_3V Pout_3V PAE_3V 25 20 20 0 -10 -6 -2 2 Pin (dBm) 6 10 0 14 6 0 10 60 Gain_5V Pout_5V PAE_5V 50 40 20 5 10 25 10 2 30 50 5 -2 Pin (dBm) 10 30 10 -6 15 60 30 -10 20 0 0 14 40 15 10 25 10 0 20 5 60 15 30 10 50 40 40 15 0 -14 0 10 GAIN (dB) & Pout (dBm) -6 GAIN (dB) & Pout (dBm) -10 PAE (%) -14 50 PAE (%) 10 20 -10 -6 -2 2 Pin (dBm) 6 10 14 0 60 Gain_3V Pout_3V PAE_3V 20 50 40 30 15 10 20 5 10 0 -10 PAE (%) 30 GAIN (dB) & Pout (dBm) 15 PAE (%) 40 5 GAIN (dB) & Pout (dBm) 25 50 PAE (%) GAIN (dB) & Pout (dBm) 20 60 Gain_5V Pout_5V PAE_5V -6 -2 2 6 Pin (dBm) 10 14 18 PAE (%) Gain_4V Pout_4V PAE_4V 25 0 30 60 30 0 Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 9 ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 180 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.776 0.798 0.818 0.832 0.835 0.84 0.842 0.843 0.844 0.847 0.847 0.847 0.843 0.841 0.851 0.862 0.882 0.903 0.939 0.956 0.94 0.948 0.942 0.92 0.959 0.952 0.943 0.956 0.959 0.918 S11 Ang. -48.1 -84.7 -110.2 -128.2 -151.9 -160.3 -166.9 -172.2 -176.9 178.8 161.9 147.6 133.8 119.8 110 100.1 80.4 60.7 44 31.8 23.2 13.6 2.6 -4.3 -15.4 -20.1 -21 -24.2 -31.9 -43.5 dB S21 Mag. Ang. 32.2 30.7 29.0 27.3 24.8 23.4 22.2 21.1 20.2 19.3 16.0 13.7 11.9 10.6 9.6 8.6 6.2 2.7 0.2 -2.1 -4.6 -6.8 -8.7 -10.3 -12.3 -14.3 -15.5 -16.2 -16.0 -15.7 40.839 34.138 28.059 23.278 17.424 14.811 12.876 11.394 10.225 9.256 6.316 4.818 3.928 3.369 3.036 2.702 2.034 1.367 1.027 0.786 0.586 0.459 0.368 0.305 0.244 0.193 0.168 0.155 0.159 0.164 154.1 135.6 121.7 111.2 100.1 94.8 90.2 86.3 82.7 79.3 64.7 51.4 38.4 25.2 14.5 3.7 -17.9 -39.4 -59.4 -77.8 -94.2 -110 -126.9 -141.2 -161.1 -171.7 179.4 169.6 155.5 137.8 dB S12 Mag. Ang. Mag. -38.4 -34.0 -32.0 -31.4 -31.7 -31.7 -31.4 -31.4 -31.1 -31.1 -30.2 -29.4 -28.6 -28.0 -27.5 -27.3 -26.9 -26.4 -27.1 -27.7 -29.1 -30.8 -34.0 -38.4 -35.4 -35.4 -35.9 -34.0 -31.4 -28.4 0.012 0.02 0.025 0.027 0.026 0.026 0.027 0.027 0.028 0.028 0.031 0.034 0.037 0.04 0.042 0.043 0.045 0.048 0.044 0.041 0.035 0.029 0.02 0.012 0.017 0.017 0.016 0.02 0.027 0.038 65.5 50.5 39.4 31.7 23.3 20.5 18.6 17.5 16.5 15.7 13.4 11 7.6 2.5 -2.4 -7.3 -17.2 -27 -37.6 -48.7 -61.5 -79 -117 -172.6 104.4 73.2 82.9 81.5 87 78.1 0.428 0.411 0.396 0.384 0.397 0.401 0.403 0.402 0.4 0.398 0.389 0.377 0.367 0.365 0.385 0.405 0.446 0.486 0.544 0.607 0.669 0.721 0.756 0.784 0.794 0.812 0.847 0.852 0.865 0.847 Freq GHz Fmin dB Gamma Opt Mag Ang Rn/50 Ga dB 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.65 0.76 0.79 0.86 0.94 1.00 1.10 1.17 1.41 1.53 1.56 1.72 1.87 2.03 2.18 0.394 0.417 0.423 0.465 0.509 0.545 0.600 0.645 0.777 0.840 0.855 0.920 0.970 0.993 0.997 0.11 0.09 0.08 0.08 0.06 0.08 0.16 0.28 0.35 0.41 0.42 0.51 0.97 1.88 2.54 25.82 21.83 21.71 18.70 17.63 16.45 14.90 13.53 11.35 10.31 10.38 9.79 7.91 6.11 4.56 163.6 172.4 175.3 -165.4 -147.7 -134.6 -116.7 -103.3 -70.0 -56.1 -52.9 -39.0 -27.5 -19.1 -7.5 S22 Ang. MSG/MAG dB -39.3 -71.3 -94.8 -111.6 -146.6 -153.7 -159 -163.3 -166.8 -169.8 178.4 169.3 160.5 152.5 143.8 135.2 117.8 100.5 87.1 72.6 57.9 45.5 35.1 24.8 15.1 7.6 1.3 -2.9 -7.8 -14.7 35.3 32.3 30.5 29.4 28.3 27.6 26.8 26.3 25.6 25.2 23.1 21.5 18.9 17.0 16.3 15.5 13.5 10.8 10.5 10.0 6.7 6.1 4.8 2.3 3.7 0.8 -0.3 0.3 1.5 -2.0 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq. GHz Mag. 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 36. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/180 mA. Notes: 1.Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 10 ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 135 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.916 0.897 0.885 0.878 0.859 0.857 0.855 0.854 0.852 0.854 0.851 0.85 0.846 0.844 0.854 0.863 0.883 0.902 0.939 0.956 0.94 0.948 0.942 0.92 0.959 0.951 0.942 0.956 0.958 0.92 S11 Ang. dB S21 Mag. -47.6 -83.9 -109.5 -127.5 -151.3 -159.9 -166.5 -171.9 -176.6 179.1 162.1 147.7 133.9 119.8 110 100.2 80.5 60.8 44.1 31.8 23.2 13.6 2.6 -4.2 -15.4 -20 -21.1 -24.2 -31.8 -43.5 32.6 30.9 29.1 27.4 24.8 23.3 22.1 21.0 20.1 19.2 15.8 13.5 11.7 10.4 9.4 8.4 5.9 2.3 0.0 -2.3 -4.8 -7.0 -8.9 -10.5 -12.4 -14.5 -15.7 -16.5 -16.2 -15.9 42.775 35.086 28.4 23.322 17.286 14.647 12.703 11.225 10.065 9.101 6.197 4.726 3.851 3.301 2.968 2.636 1.972 1.308 1.005 0.769 0.573 0.448 0.36 0.297 0.239 0.188 0.164 0.149 0.155 0.161 Ang. 152.6 133.4 119.5 109.2 98.2 93.1 88.7 84.9 81.5 78.2 63.9 50.7 37.7 24.6 13.9 3.1 -18.5 -40 -60 -78.3 -95 -110.5 -127.7 -141.8 -161.9 -172.9 178.7 167.8 154.1 136.9 dB S12 Mag. Ang. Mag. -37.7 -33.2 -31.4 -30.8 -31.4 -31.1 -31.1 -30.8 -30.8 -30.8 -29.9 -29.4 -28.4 -28.0 -27.7 -27.5 -26.9 -26.6 -27.1 -27.7 -29.1 -30.8 -34.0 -38.4 -34.9 -35.4 -35.4 -34.0 -31.4 -28.4 0.013 0.022 0.027 0.029 0.027 0.028 0.028 0.029 0.029 0.029 0.032 0.034 0.038 0.04 0.041 0.042 0.045 0.047 0.044 0.041 0.035 0.029 0.02 0.012 0.018 0.017 0.017 0.02 0.027 0.038 66.7 49.5 37.8 29.9 21.3 18.6 16.9 15.6 14.6 13.9 11.3 9 5.7 0.8 -4 -8.7 -18.1 -27.6 -38.6 -49.6 -62.1 -80 -118.6 -173.3 105 74 84.5 82.4 87.3 78.5 0.458 0.43 0.407 0.39 0.399 0.401 0.402 0.4 0.398 0.396 0.386 0.374 0.364 0.362 0.382 0.401 0.441 0.48 0.542 0.605 0.668 0.721 0.757 0.784 0.794 0.812 0.847 0.853 0.866 0.848 Freq GHz Fmin dB Gamma Opt Mag Ang Rn/50 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.30 0.41 0.44 0.53 0.62 0.69 0.80 0.89 1.16 1.31 1.34 1.52 1.71 1.89 2.07 0.162 0.291 0.302 0.369 0.433 0.484 0.556 0.613 0.764 0.832 0.848 0.914 0.963 0.991 0.998 0.05 0.05 0.05 0.04 0.04 0.05 0.10 0.19 0.26 0.30 0.30 0.39 0.77 0.96 1.58 150.8 161.3 164.2 -174.2 -154.6 -140.2 -120.6 -106.1 -71.0 -56.6 -53.4 -39.3 -27.9 -18.2 -9.2 26.27 22.12 22.02 18.95 17.05 15.87 14.63 13.21 11.19 10.26 10.04 9.64 8.68 6.57 4.51 S22 Ang. MSG/MAG dB -40.7 -73.3 -96.8 -113.4 -148.1 -155 -160.1 -164.3 -167.7 -170.6 178 169 160.4 152.4 143.7 135 117.6 100.2 87.3 72.8 58.1 45.6 35.2 24.8 15.1 7.7 1.4 -2.9 -7.8 -14.7 35.2 32.0 30.2 29.1 28.1 27.2 26.6 25.9 25.4 25.0 22.9 21.4 19.3 17.0 16.2 15.3 13.3 10.3 10.3 9.8 6.6 5.9 4.6 2.1 3.5 0.4 -0.6 0.0 1.2 -2.1 40 Ga dB MSG 30 MSG/MAG & |S21|2 (dB) Freq. GHz Mag. 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 37. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/135 mA. Notes: 1.Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11 ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 75 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.926 0.891 0.882 0.879 0.885 0.886 0.886 0.886 0.885 0.887 0.884 0.884 0.88 0.875 0.882 0.889 0.903 0.917 0.947 0.959 0.941 0.946 0.936 0.914 0.951 0.948 0.937 0.949 0.947 0.906 S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. -80.9 -121.5 -142.5 -155.4 -169.7 -175.4 -180 176.1 172.5 169.3 155.1 142.1 129.1 115.5 106.2 96.8 78.1 59.4 43.5 31.7 23.4 14.1 3.1 -3.7 -14.9 -19.8 -21.1 -24.5 -32.9 -45.1 33.5 29.9 27.0 24.8 21.7 20.1 18.8 17.7 16.8 15.9 12.5 10.1 8.4 7.0 6.1 5.1 2.5 -1.1 -3.6 -6.0 -8.6 -10.7 -12.5 -14.2 -16.2 -18.3 -19.0 -19.7 -18.6 -17.8 47.17 31.192 22.457 17.36 12.12 10.145 8.743 7.695 6.883 6.209 4.212 3.21 2.618 2.246 2.018 1.791 1.337 0.882 0.658 0.501 0.37 0.292 0.236 0.194 0.154 0.121 0.112 0.104 0.118 0.129 135.8 114.3 102.7 94.8 88.9 85 81.6 78.4 75.3 72.4 58.8 45.7 32.5 18.9 8.1 -2.8 -24.5 -46.2 -65.5 -83.3 -98.9 -114.3 -131.4 -146 -166.9 -175.3 176.1 167.9 154.7 138.1 -35.9 -33.2 -32.0 -31.7 -32.8 -32.4 -32.4 -32.0 -31.7 -31.7 -30.5 -29.1 -28.0 -27.1 -26.7 -26.6 -26.0 -25.5 -26.2 -26.7 -28.4 -29.6 -33.2 -37.7 -37.7 -39.2 -40.9 -43.1 -37.7 -33.6 0.016 0.022 0.025 0.026 0.023 0.024 0.024 0.025 0.026 0.026 0.03 0.035 0.04 0.044 0.046 0.047 0.05 0.053 0.049 0.046 0.038 0.033 0.022 0.013 0.013 0.011 0.009 0.007 0.013 0.021 51.6 34.6 26.7 22.2 19.7 19 18.6 18.5 18.4 18.3 17.8 15.6 11.2 4.9 -1.1 -7.1 -19 -31 -42.2 -53.9 -65.8 -82.9 -116.4 -159.1 104.3 56.9 79.5 74.4 117.9 111.8 0.389 0.447 0.471 0.482 0.551 0.555 0.557 0.557 0.555 0.554 0.548 0.538 0.532 0.532 0.549 0.567 0.603 0.638 0.681 0.725 0.77 0.805 0.826 0.843 0.843 0.85 0.877 0.878 0.887 0.862 Freq GHz Fmin dB Gamma Opt Mag Ang Rn/50 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.32 0.41 0.43 0.49 0.56 0.61 0.69 0.75 0.95 1.05 1.08 1.21 1.34 1.47 1.60 0.175 0.224 0.235 0.306 0.375 0.428 0.507 0.569 0.738 0.814 0.831 0.907 0.961 0.992 0.996 0.05 0.04 0.03 0.03 0.03 0.04 0.08 0.14 0.20 0.24 0.24 0.30 0.60 0.71 1.01 127.6 143.8 148.3 173.6 -163.6 -147.2 -125.3 -109.3 -72.0 -57.4 -54.2 -40.5 -29.3 -19.3 -8.9 26.45 21.98 21.50 18.55 16.33 15.18 13.86 12.68 10.81 10.64 9.97 9.25 7.78 6.96 4.46 S22 Ang. MSG/MAG dB -96 -131.4 -147.6 -157 -172.5 -176 -178.8 178.7 176.5 174.4 165.1 156.3 147.4 139 130.5 122 105.1 88.1 75.1 61.6 48.2 36.9 27.2 17.2 8 1.2 -4.2 -8.2 -13.1 -21.1 34.7 31.5 29.5 28.2 27.2 26.3 25.6 24.9 24.2 23.8 21.5 19.2 16.2 14.4 13.8 13.0 11.1 8.2 7.9 7.2 4.0 3.3 1.7 -0.7 -0.3 -2.9 -3.5 -3.2 -1.6 -4.1 40 Ga dB MSG 30 MSG/MAG & |S21|2 (dB) Freq. GHz Mag. 20 MAG 10 0 S21 -10 -20 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 38. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/75 mA. Notes: 1.Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 5.0V, IDS = 135 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.903 0.889 0.879 0.874 0.857 0.856 0.854 0.853 0.852 0.854 0.852 0.851 0.846 0.844 0.854 0.864 0.883 0.903 0.939 0.957 0.941 0.948 0.941 0.919 0.958 0.951 0.942 0.956 0.957 0.917 S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. -47.8 -84.2 -109.8 -127.8 -151.5 -160 -166.6 -172 -176.7 179.1 162 147.6 133.8 119.8 110 100.1 80.3 60.6 44 31.7 23 13.6 2.5 -4.4 -15.5 -20.1 -21.1 -24.2 -31.9 -43.6 32.5 30.8 28.9 27.2 24.6 23.2 22.0 20.9 19.9 19.1 15.7 13.4 11.6 10.3 9.3 8.3 5.9 2.4 -0.1 -2.4 -5.0 -7.1 -9.0 -10.8 -12.7 -14.8 -15.9 -16.7 -16.5 -16.1 42.048 34.523 27.96 22.97 17.06 14.454 12.541 11.079 9.935 8.984 6.117 4.662 3.798 3.257 2.934 2.611 1.965 1.319 0.989 0.756 0.562 0.441 0.353 0.29 0.231 0.183 0.16 0.147 0.149 0.156 152.7 133.5 119.5 109.2 98.2 93.1 88.7 84.9 81.4 78.1 63.7 50.4 37.4 24.2 13.4 2.5 -19.1 -40.8 -60.9 -79.4 -96.1 -112 -129.2 -143.9 -163.8 -174.6 175.9 166 152.8 134.6 -37.7 -33.2 -31.4 -30.8 -31.4 -31.1 -31.1 -30.8 -30.8 -30.5 -29.9 -29.4 -28.6 -28.0 -27.7 -27.5 -26.9 -26.6 -27.1 -27.7 -29.1 -30.8 -34.0 -38.4 -34.9 -35.4 -35.4 -34.0 -31.4 -28.4 0.013 0.022 0.027 0.029 0.027 0.028 0.028 0.029 0.029 0.03 0.032 0.034 0.037 0.04 0.041 0.042 0.045 0.047 0.044 0.041 0.035 0.029 0.02 0.012 0.018 0.017 0.017 0.02 0.027 0.038 66.6 49.3 37.6 29.8 21.2 18.5 16.7 15.4 14.3 13.6 11 8.7 5.3 0.6 -4.1 -8.8 -18.3 -27.7 -37.9 -49 -61.5 -79.3 -117.6 -172.8 105.3 74.4 84 81.8 87 77.6 0.466 0.432 0.404 0.385 0.388 0.389 0.39 0.388 0.386 0.383 0.373 0.361 0.352 0.35 0.371 0.392 0.433 0.475 0.536 0.601 0.666 0.72 0.757 0.785 0.796 0.814 0.849 0.855 0.868 0.851 Freq GHz Fmin dB Gamma Opt Mag Ang Rn/50 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.36 0.46 0.49 0.59 0.69 0.77 0.88 0.98 1.28 1.44 1.48 1.68 1.88 2.08 2.28 0.266 0.315 0.327 0.388 0.448 0.495 0.563 0.617 0.764 0.830 0.845 0.912 0.960 0.988 0.994 0.05 0.04 0.04 0.04 0.04 0.06 0.12 0.21 0.31 0.37 0.38 0.42 0.84 1.24 1.78 149.9 162.4 165.6 -172.7 -153.0 -138.6 -116.3 -104.9 -70.5 -56.5 -53.4 -39.7 -28.3 -18.3 -8.5 26.51 22.79 22.09 18.92 17.04 15.87 14.50 13.11 11.19 10.10 10.08 9.39 8.78 8.05 4.74 S22 Ang. MSG/MAG dB -39.6 -71.6 -94.7 -111.3 -146.6 -153.7 -158.9 -163.2 -166.6 -169.5 179.1 170.2 161.7 153.9 145.2 136.6 119.2 101.9 88.4 73.8 58.9 46.2 35.7 25.2 15.4 7.9 1.6 -2.7 -7.7 -14.6 35.1 32.0 30.2 29.0 28.0 27.1 26.5 25.8 25.3 24.8 22.8 21.4 18.8 16.8 16.1 15.3 13.3 10.5 10.2 9.8 6.5 5.8 4.4 1.9 3.1 0.2 -0.8 -0.2 0.7 -2.5 40 Ga dB MSG 30 MSG/MAG & |S21|2 (dB) Freq. GHz Mag. 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 39. MSG/MAG & |S21|2 vs. and Frequency at 5.0V/135 mA. Notes: 1.Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 13 ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 3.0V, IDS = 135 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.925 0.904 0.889 0.882 0.861 0.859 0.856 0.855 0.853 0.855 0.851 0.851 0.845 0.843 0.853 0.862 0.882 0.901 0.938 0.955 0.938 0.946 0.94 0.92 0.958 0.952 0.943 0.955 0.958 0.918 S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. -47.5 -83.8 -109.3 -127.4 -151.3 -159.8 -166.5 -171.8 -176.7 179.1 162.1 147.6 133.8 119.8 110 100.1 80.4 60.7 44.1 31.8 23.1 13.6 2.6 -4.2 -15.5 -20.1 -21.2 -24.2 -31.9 -43.5 32.6 30.9 29.1 27.4 24.7 23.3 22.0 21.0 20.0 19.1 15.8 13.5 11.7 10.4 9.5 8.4 6.0 2.5 0.1 -2.3 -4.8 -6.9 -8.8 -10.4 -12.4 -14.4 -15.5 -16.2 -16.0 -15.7 42.873 35.157 28.44 23.35 17.223 14.586 12.655 11.183 10.027 9.067 6.179 4.713 3.846 3.299 2.972 2.645 1.99 1.336 1.006 0.771 0.576 0.453 0.364 0.302 0.241 0.191 0.167 0.154 0.159 0.165 152.7 133.4 119.5 109.2 98.3 93.2 88.9 85.2 81.7 78.4 64.3 51.2 38.4 25.4 14.8 4.1 -17.1 -38.4 -58 -76 -92.2 -107.4 -124.6 -138.3 -157.7 -167.9 -177 173.2 159.5 141.4 -37.7 -33.2 -31.4 -30.5 -31.1 -31.1 -30.8 -30.8 -30.5 -30.5 -29.6 -29.1 -28.2 -27.5 -27.3 -27.1 -26.7 -26.4 -27.1 -27.7 -29.4 -30.8 -34.0 -37.7 -34.9 -35.4 -35.4 -34.0 -31.4 -28.4 0.013 0.022 0.027 0.03 0.028 0.028 0.029 0.029 0.03 0.03 0.033 0.035 0.039 0.042 0.043 0.044 0.046 0.048 0.044 0.041 0.034 0.029 0.02 0.013 0.018 0.017 0.017 0.02 0.027 0.038 66.6 49.4 37.7 29.8 21.4 18.7 17 15.7 14.8 14 11.4 8.9 5 -0.1 -5.1 -10.2 -20.2 -30.3 -40.8 -51.6 -64 -82 -121.6 -176.6 105.2 74.2 85.1 83.1 89 79.5 0.435 0.425 0.416 0.41 0.433 0.437 0.439 0.438 0.436 0.435 0.425 0.413 0.403 0.401 0.419 0.438 0.475 0.512 0.565 0.622 0.681 0.729 0.76 0.785 0.794 0.81 0.844 0.849 0.861 0.843 Freq GHz Fmin dB Gamma Opt Mag Ang Rn/50 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.34 0.43 0.45 0.53 0.61 0.68 0.78 0.86 1.10 1.24 1.27 1.43 1.60 1.76 1.93 0.225 0.282 0.296 0.362 0.427 0.478 0.551 0.608 0.763 0.832 0.848 0.915 0.964 0.991 0.995 0.05 0.04 0.04 0.03 0.03 0.05 0.09 0.17 0.24 0.28 0.30 0.38 0.74 0.95 1.55 146.2 157.0 160.2 -177.0 -156.3 -141.3 -121.1 -106.2 -70.8 -56.6 -53.5 -39.7 -28.4 -18.5 -8.6 26.30 22.19 22.07 19.00 17.13 15.89 14.59 13.17 11.22 10.16 9.93 9.57 8.78 7.27 3.39 S22 Ang. MSG/MAG dB -44 -78.6 -102.6 -119.1 -151.6 -158.2 -163 -167.1 -170.4 -173.3 175.3 166 157.1 148.8 140.2 131.6 114.3 97.1 84 70 55.7 43.6 33.5 23.3 13.8 6.6 0.5 -3.7 -8.5 -15.5 35.2 32.0 30.2 28.9 27.9 27.2 26.4 25.9 25.2 24.8 22.7 21.3 19.6 17.0 16.3 15.4 13.4 10.5 10.3 9.7 6.5 5.8 4.6 2.3 3.6 0.7 -0.3 0.1 1.5 -2.0 40 Ga dB MSG 30 MSG/MAG & |S21|2 (dB) Freq. GHz Mag. 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 40. MSG/MAG & |S21|2 vs. and Frequency at 3.0V/135 mA. Notes: 1.Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 14 Device Models, PCB Layout and Stencil Device Refer to Avago’s Web Site: http://www.avagotech.com/pages/en/rf_microwave Ordering Information Part Number No. of Devices Container ATF-53189-TR1 3000 13” Reel ATF-53189-BLK 100 Anti-static bag SOT89 Package Dimensions D D D1 D1 E1 POLISH E1 OR E L L e e S S e1 C e1 1.625 D2 MATTE FINISH HALF ETCHING DEPTH 0.100 1.23 2.35 0.77 0.2 D1 E b b1 b POLISH 1.24 E A OR b1 Dimensions in mm 15 Dimensions in inches Symbols Minimum Nominal Maximum Minimum Nominal A 1.40 1.50 1.60 0.055 0.059 Maximum 0.063 L 0.89 1.04 1.20 0.0350 0.041 0.047 0.018 b 0.36 0.42 0.48 0.014 0.016 b1 0.41 0.47 0.53 0.016 0.018 0.030 C 0.38 0.40 0.43 0.014 0.015 0.017 D 4.40 4.50 4.60 0.173 0.177 0.181 D1 1.40 1.60 1.75 0.055 0.062 0.069 D2 1.45 1.65 1.80 0.055 0.062 0.069 E 3.94 - 4.25 0.155 - 0.167 E1 2.40 2.50 2.60 0.094 0.098 0.102 e1 2.90 3.00 3.10 0.114 0.118 0.122 S 0.65 0.75 0.85 0.026 0.030 0.034 e 1.40 1.50 1.60 0.054 0.059 0.063 Device Orientation USER FEED DIRECTION 3GX 3GX 3GX CARRIER TAPE 3GX REEL COVER TAPE Tape Dimensions Ø 1.5 +0.1/-0.0 8.00 0.30 ± .05 Ø 1.50 MIN. 2.00 ± .05 SEE NOTE 3 4.00 SEE NOTE 1 A R 0.3 MAX. 1.75 ± .10 5.50 ± .05 SEE NOTE 3 Bo 12.0 ± .3 Ko SECTION A - A 16 Ao Ao = 4.60 Bo = 4.90 Ko = 1.90 R 0.3 TYP. A DIMENSIONS IN MM NOTES: 1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±0.2 2. CAMBER IN COMPLIANCE WITH EIA 481 3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE Reel Dimensions – 13” Reel R LOKREEL R MINNEAPOLIS USA U.S PAT 4726534 102.0 REF 1.5 ATTENTION Electrostatic Sensitive Devices Safe Handling Required 88 REF 330.0 REF "A" 96.5 6 PS Detail "B" 6 PS Detail "A" +0.3 (MEASURED AT HUB) 8.4 - 0.2 (MEASURED AT HUB) 11.1 MAX. Ø 20.2 Dimensions in mm M IN +0.5 Ø 13.0 -0.2 2.0 ± 0.5 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes 5989-3893EN AV02-0051EN - May 23, 2013