A-POWER AP01L60J-HF

AP01L60H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
600V
RDS(ON)
12Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
1A
S
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
G
D
S
TO-252(H)
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
1
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
0.8
A
3
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
29
W
Linear Derating Factor
0.232
W/℃
0.5
mJ
1
A
EAS
Single Pulse Avalanche Energy2
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
0.5
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
4.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
201010134
AP01L60H/J-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
600
-
-
V
-
0.8
-
V/℃
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.5A
-
-
12
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.5A
-
0.8
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
IGSS
VGS=0V, ID=1mA
Min.
3
3
Qg
Total Gate Charge
ID=1A
-
4.0
-
nC
Qgs
Gate-Source Charge
VDS=480V
-
1.0
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.1
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
6.6
-
ns
tr
Rise Time
ID=1A
-
5.0
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.7
-
ns
tf
Fall Time
RD=300Ω
-
9.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
-
pF
Coss
Output Capacitance
VDS=25V
-
30.7
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Min.
Typ.
-
-
1
A
-
-
5
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
Tj=25℃, IS=1A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A.
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP01L60H/J-HF
1.0
1.5
o
o
T C =150 C
10V
6.0V
5.5V
5.0V
1.0
0.5
10V
5.0V
0.8
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
V G =4.5V
0.0
4.5V
0.5
V G =4.0V
0.3
0.0
0
12
24
36
0
10
V DS , Drain-to-Source Voltage (V)
20
30
40
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.5
I D =0.5A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.3
1.1
0.9
2
1
0.7
0.5
0
-50
0
50
100
-50
150
0
o
Fig 3. Normalized BVDSS v.s. Junction
150
v.s. Junction Temperature
3.5
1
3.0
VGS(th) (V)
10
IS (A)
100
Fig 4. Normalized On-Resistance
Temperature
T j = 25 o C
T j = 150 o C
50
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
0.1
2.5
0.01
2.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP01L60H/J-HF
f=1.0MHz
1000
I D =1A
V DS =480V
12
C iss
100
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
10
4
C rss
1
0
0
1.5
3
4.5
1
6
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
ID (A)
100us
1ms
0.1
10ms
100ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
10
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4