IRF IRF7910PBF_08

PD - 95336A
IRF7910PbF
HEXFET® Power MOSFET
Applications
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High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for
Netcom and Computing Applications
Power Management for Netcom,
Computing and Portable Applications
Lead-Free
Benefits
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Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
12V
15mΩ @VGS = 4.5V
10A
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
12
± 12
10
7.9
79
2.0
1.3
16
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Typ.
Max.
Units
–––
–––
42
62.5
°C/W
Notes  through „ are on page 8
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07/21/08
IRF7910PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
12
–––
–––
–––
0.6
–––
–––
–––
–––
Typ.
–––
0.01
11.5
20
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
15
VGS = 4.5V, ID = 8.0A ƒ
mΩ
50
VGS = 2.8V, ID = 5.0A
2.0
V
VDS = VGS, ID = 250µA
100
VDS = 9.6V, VGS = 0V
µA
250
VDS = 9.6V, VGS = 0V, TJ = 125°C
200
VGS = 12V
nA
-200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
18
––– –––
S
VDS = 6.0V, ID = 8.0A
–––
17
26
ID = 8.0A
–––
4.4 –––
nC
VDS = 6.0V
–––
5.2 –––
VGS = 4.5V
–––
16 –––
VGS = 0V, VDS = 10V
–––
9.4 –––
VDD = 6.0V
–––
22 –––
ID = 8.0A
ns
–––
16 –––
RG = 1.8Ω
–––
6.3 –––
VGS = 4.5V ƒ
––– 1730 –––
VGS = 0V
––– 1340 –––
VDS = 6.0V
––– 330 –––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
100
8.0
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
1.8
–––
–––
79
–––
–––
–––
–––
–––
–––
0.85
0.70
50
60
51
60
1.3
–––
75
90
77
90
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 8.0A, VGS = 0V ƒ
TJ = 125°C, IS = 8.0A, VGS = 0V ƒ
TJ = 25°C, IF = 8.0A, VR =12V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 8.0A, VR =12V
di/dt = 100A/µs ƒ
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IRF7910PbF
1000
10
VGS
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
1000
VGS
1
1.5V
0.1
20µs PULSE WIDTH
Tj = 25°C
100
10
1.5V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.01
0.1
1
0.1
10
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
T J = 150°C
10
TJ = 25°C
VDS = 10V
20µs PULSE WIDTH
1.0
2.0
3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0
I D = 10A
1.5
(Normalized)
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
100
1
10
1.0
0.5
V GS = 4.5V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7910PbF
10000
12
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
C, Capacitance (pF)
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
ID= 8.0A
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
1
10
0
100
10
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
T J = 150°C
10
1
0.1
0.5
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
VGS = 0V
0.0
40
100
T J = 25°C
1.0
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10.0
20
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 9.6V
VDS= 6.0V
10
2.0
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0
10msec
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7910PbF
10.0
VDS
VGS
8.0
D.U.T.
RG
ID , Drain Current (A)
RD
+
-V DD
6.0
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC, Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
(Z thJA)
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
1
+T A
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.0145
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
IRF7910PbF
0.0140
0.0135
VGS = 4.5V
0.0130
0.0125
0.0120
0
20
40
60
80
0.020
0.018
0.015
ID = 8.0A
0.013
0.010
2.5
100
3.5
4.5
5.5
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
250
ID
VG
TOP
VGS
3mA
Charge
200
ID
EAS , Single Pulse Avalanche Energy (mJ)
IG
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
BOTTOM
3.6A
6.4A
8.0A
150
100
50
0
25
50
75
100
Starting T , Junction
Temperature
J
125
150
( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7910PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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'$7(&2'(<::
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRF7910PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 3.2mH
RG = 25Ω, IAS = 8.0A.
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2008
8
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