ISOCOM CNY17F

CNY17F-1X, CNY17F-2X, CNY17F-3X, CNY17F-4X
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
Package Code GG
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : - STD
- G form
- SMD approved to CECC 00802
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Dimensions in mm
2.54
7.0
6.0
1
2
6
5
3
4
1.2
7.62
6.62
Certified to EN60950 by
Nemko - Certificate No. P01102464
7.62
4.0
3.0
13°
Max
0.5
DESCRIPTION
TheCNY17F-1,CNY17F-2,CNY17F-3,CNY17F-4
series of optically coupled isolators consist of
infrared light emitting diode and NPN silicon
photo transistor in a standard 6 pin dual in line
plastic package with the base pin unconnected.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High BVCEO (70V min)
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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Base pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION G
OPTION SM
7.62
SURFACE MOUNT
3.0
0.5
3.35
0.26
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
70V
6V
50mA
160mW
POWER DISSIPATION
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England Tel:
(01429)863609 Fax : (01429) 863581 e-mail
[email protected] http://www.isocom.com
26/11/08
DB92179
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
Input
MIN TYP MAX UNITS
Forward Voltage (VF)
1.2
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
( note 2 )
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Input-output Isolation Resistance RISO
Note 1
Note 2
V
IF = 60mA
10
μA
VR = 6V
V
IC = 1mA
50
V
nA
IE = 100μA
VCE = 10V
80
125
200
320
%
%
%
%
10mA IF , 5V VCE
10mA IF , 5V VCE
10mA IF , 5V VCE
10mA IF , 5V VCE
0.4
V
10mA IF , 2.5mA IC
VRMS
VPK
Ω
See note 1
See note 1
VIO = 500V (note 1)
6
40
63
100
160
Collector-emitter SaturationVoltageVCE(SAT)
Input to Output Isolation Voltage VISO
1.65
70
Current Transfer Ratio (CTR) (Note 2)
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
TEST CONDITION
5300
7500
5x1010
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
TYPICAL SWITCHING CHARACTERISTICS
1. Linear Operation (without saturation) Fig 1.
IF = 10mA, VCC = 5V, RL = 75Ω
UNITS
Turn-on Time
Rise Time
Turn-off Time
Fall Time
Cut-off Frequency
ton
tr
toff
tf
FCO
VCC = 5.0V
OUTPUT
FIG 1
VCC = 5V, RL = 1kΩ
-1
-4
-2 and -3
(IF=20mA) (IF=10mA) (IF=5mA)
GROUP
μs
μs
μs
μs
kHz
Turn-on Time ton
tr
Rise Time
Turn-off Time toff
tf
Fall Time
VCESAT
4.2
3.0
23
14
< 0.4
3.0
2.0
18
11
6.0
4.6
25
15
UNITS
μs
μs
μs
μs
V
INPUT
VCC = 5.0V
RL = 75Ω
26/11/08
3.0
2.0
2.3
2.0
250
2. Switching Operation (with saturation) Fig 2
toff
ton
RL = 1kΩ
tr
OUTPUT
tf
OUTPUT
10%
10%
90%
90%
FIG 2
DB92179
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
( normalised to CNY17F-3 )
TA = 25°C
50
Collector current IC (mA)
Collector power dissipation PC (mW)
200
150
100
50
40
50
30
30
20
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
Forward Current vs. Ambient Temperature
80
320
70
280
60
50
40
30
20
10
0
6
8
10
VCE = 5V
TA = 25°C
240
CNY17F-4
200
160
CNY17F-3
120
CNY17F-2
80
40
CNY17F-1
0
-30
0
25
50
75
100
1
125
2
5
Ambient temperature TA ( °C )
IF = 10mA
VCE = 5V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature TA ( °C )
100
Collector-emitter saturation voltage VCE(SAT) (V)
1.5
10
20
50
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
4
Current Transfer Ratio vs. Forward Current
Current transfer ratio CTR (%)
Forward current IF (mA)
2
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
26/11/08
15
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
IF = 10mA
IC = 2.5mA
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
Ambient temperature TA ( °C )
DB92179
100