MICROSS LS358_SOT-23

LS358
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Log Conformance Monolithic Dual PNP
The LS358 is a monolithic pair of PNP transistors
mounted in a single SOT-23 package. The monolithic
dual chip design reduces parasitics and is ideal for use
in logging applications. See LS318 for NPN.
FEATURES LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) The 6 Pin SOT-23 provides ease of manufacturing, and
a lower cost assembly option.
Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current (See Packaging Information).
LS358 Features:
ƒ
ƒ
Tight matching
Low Output Capacitance
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/°C Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential ∆re = 1.5Ω
‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA MIN ‐‐ ‐‐ TYP 0.4 1 MAX 1 10 UNITS mV µV/°C ‐‐ ‐‐ ‐‐ ‐‐ 10 0.5 nA nA/°C ‐‐ 5 ‐‐ % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V Click To Buy
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. ∆re Log Conformance ‐‐ BVCBO Collector to Base Voltage 20 BVCEO Collector to Emitter Voltage 20 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 45 100 hFE DC Current Gain 100 100 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 200 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. 1.5 ‐‐ ‐‐ ‐‐ ‐‐ 600 600 ‐‐ 0.5 0.2 0.2 2 2 0.5 ‐‐ 3 UNITS Ω V V V V V nA nA pF pF nA MHz dB CONDITIONS IC = 10‐100‐1000µA, VCE = 5V IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 1mA, IB = 0.1mA IC = 0, VEB = 3V IE = 0, VCB = 15V IE = 0, VCB = 5V VCC = 0V VCC = ±45V IC = 1mA, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. SOT-23 (Top View)
Available Packages:
LS358 in SOT-23
LS358 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
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