IC IC MOSFET SMD Type Product specification KPA1758 Features Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 m (MAX.) (VGS = 2.5 V, ID = 3.0 A) 1 : Source 1 Low Ciss : Ciss = 1100 pF (TYP.) 2 : Gate 1 Built-in G-S protection diode 7, 8 : Drain 1 3 : Source 2 Small and surface mount package 4 : Gate 2 5, 6 : Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage (VGS = 0) VDSS 30 V Gate to Source Voltage (VDS = 0) VGSS 12.0 V Drain Current (DC) ID(DC) 6.0 A ID(pulse) Drain Current (Pulse) *1 24 A Total Power Dissipation (1 unit) *2 PT 1.7 W Total Power Dissipation (2 unit) *2 PT 2.0 W Channel Temperature Tch 150 Tstg -55 to + 150 Storage Temperature *1 PW 10 s, Duty cycle 1% *2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMD Type Product specification KPA1758 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Symbol Testconditons RDS(on)1 VGS = 4.5 V, ID = 3.5 A Min Typ Max 20 30 m m RDS(on)2 VGS = 2.5 V, ID = 3.5 A 25 40 Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 0.8 1.5 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 5.0 13 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 Gate to Source Leakage Current IGSS VGS = Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time tr td(off) Total Gate Charge QG QGS Gate to Drain Charge QGD http://www.twtysemi.com ID = 3.0 A, VGS(on) = 4.0 V, VDD = 15 V,RG = 10 tf Gate to Source Charge Body Diode forward Voltage VDS = 10 V, VGS = 0, f = 1 MHz VF(S-D) ID = 6.0 A, VDD = 24 V, VGS = 4.0 V IF = 6.0 A, VGS = 0 [email protected] V S 10 12.0 V, VDS = 0 Unit 10 A A 1100 pF 370 pF 170 pF 50 ns 190 ns 550 ns 490 ns 15.0 nC 2.0 nC 6.5 nC 0.8 V 4008-318-123 2 of 2