IC IC SMD Type Product specification KRF7555 Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating VDS -20 ID -4.3 Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID -3.4 Pulsed Drain Current *1 IDM -34 Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Power Dissipation *2 @TA= 25 Power Dissipation *2 @TA= 70 PD 1.25 0.8 Linear Derating Factor 10 Gate-to-Source Voltage VGS 12 Unit A W W m W/ V Single Pulse Avalanche Energy*2 EAS 36 Mj Peak Diode Recovery dv/dt *3 dv/dt 1.1 V/ns TJ, TSTG -55 to + 150 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 R JA 100 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -2.0A, di/dt -140A/ http://www.twtysemi.com s, VDD 10sec V(BR)DSS,TJ 150 [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7555 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS = 0V, ID = -250 A Min V/ 0.055 VGS = -2.5V, ID = -3.4A*1 0.105 -0.6 VDS = -10V, ID = -0.8A*1 2.5 -1.2 VDS = -16V, VGS = 0V -1.0 VDS = -16V, VGS = 0V, TJ = 125 -25 VGS = -12V -100 VGS = 12V 100 Qg ID = -3.0A 10 15 Gate-to-Source Charge Qgs VDS = -10V 2.1 3.1 Gate-to-Drain ("Miller") Charge Qgd VGS = -5.0V 2.5 3.7 Turn-On Delay Time td(on) VDD = -10V 10 tr ID = -2.0A 46 td(off) RD = 5.0 60 tf Rg = 6.0 64 Input Capacitance Ciss VGS = 0V 1066 Output Capacitance Coss VDS = -10V 402 Reverse Transfer Capacitance Crss f = 1.0MHz 126 Turn-Off Delay Time Fall Time Continuous Source Current Body Diode) V S Total Gate Charge Rise Time Unit V VGS = -4.5V, ID = -4.3A*1 VDS = VGS, ID = -250 A Gate-to-Source Reverse Leakage Max -0.005 TJ ID = -1mA,Reference to 25 gfs IGSS Typ -20 VGS(th) IDSS Gate-to-Source Forward Leakage Testconditons A nA nC ns pF IS -1.3 ISM -34 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD -1.2 V Reverse Recovery Time trr TJ = 25 , IF =-2.5A 54 82 ns Reverse RecoveryCharge Qrr di/dt = -100A/ 41 61 nC *1 Pulse width 300 s; duty cycle TJ = 25 , IS = -1.6A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2