IC IC MOSFET SMD Type Product specification KDS3512 Features 4.0 A, 80 V. RDS(ON) = 70m @ VGS = 10 V RDS(ON) = 80m @ VGS = 6 V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 80 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) 20 V 4 A 30 A 2.5 PD 1.2 W 1 TJ, TSTG Operating and Storage Temperature -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMD Type Product specification KDS3512 Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage W DSS IAR BVDSS Breakdown Voltage Temperature Coefficient Max Unit VDD = 40 V, ID = 4.0A (Not 2) Testconditons 90 mJ ( Not 2) 4.0 A VGS = 0 V, ID = 250 ID = 250 Min Typ 80 A V 80 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 64 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) 4 V Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 ID = 250 Static Drain-Source On-Resistance RDS(on) On-State Drain Current 2 A 2.4 -6 A, Referenced to 25 50 70 VGS = 6 V, ID = 3.7 A 55 80 VGS = 10 V, ID =4.0 A,TJ = 125 91 135 ID(on) VGS = 10 V, VDS = 5 V gFS VDS = 10V, ID = 4.0 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) 7 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Total Gate Charge Qg Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage http://www.twtysemi.com 20 A S 634 pF 58 pF 28 pF VDS = 40 V, VGS = 0 V,f = 1.0 MHz VDD = 40 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) VDS = 40 V, ID = 4.0 A,VGS = 10 V (Note 2) VGS = 0 V, IS = 2.1 A (Not 2) [email protected] ns 3 6 ns 38 ns 4 8 ns 13 18 nC 2.4 nC 2.8 nC 0.8 4008-318-123 14 24 IS VSD m 14 tf Gate-Source Charge mV/ VGS = 10 V, ID = 4.0 A Forward Transconductance A 2.1 A 1.2 V 2 of 2