IC IC MOSFET SMD Type Product specification KDS5670 Features 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) 20 V 10 A 50 A 2.5 PD 1.2 TJ, TSTG -55 to 175 W 1 Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W http://www.twtysemi.com [email protected] 4008-318-123 1of 2 IC IC MOSFET SMD Type Product specification KDS5670 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = 250 ID = 250 Min Typ Max 60 A Unit V 58 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4 V Gate Threshold Voltage Temperature Coefficient ID = 250 2 A 6.8 A, Referenced to 25 VGS = 10 V, ID = 10 A Static Drain-Source On-Resistance RDS(on) On-State Drain Current ID(on) Forward Transconductance gFS Input Capacitance Ciss 2.4 A mV/ 0.012 0.014 VGS = 10 V, ID =10 A,TJ = 125 0.019 0.027 VGS = 6 V, ID =9 A 0.014 0.017 VGS = 10 V, VDS = 5V 25 A VDS =5V, ID =10 A 39 S 2900 pF VDS = 15 V, VGS = 0 V,f = 1.0 MHz Output Capacitance Coss 685 pF Reverse Transfer Capacitance Crss 180 pF Turn-On Delay Time td(on) 16 29 ns 10 20 ns 50 80 ns 23 42 ns 49 70 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage http://www.twtysemi.com VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) VDS = 20 V, ID = 10 A,VGS = 10 V (Note 2) nC 10.4 nC IS VSD VGS = 0 V, IS = 2.1 A (Not 2) [email protected] nC 9 0.72 4008-318-123 2.1 A 1.2 V 2 of 2