BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series Zener Voltage Regulators http://onsemi.com 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. 3 Cathode Features • • • • • • • • SOT−23 CASE 318 STYLE 8 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Tight Tolerance Series Available (See Page 4) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 1 Anode MARKING DIAGRAM xxx M G G 1 xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BZX84CxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZBZX84CxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BZX84CxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZBZX84CxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BZX84BxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZBZX84BxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BZX84BxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 17 1 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Publication Order Number: BZX84C2V4LT1/D BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series MAXIMUM RATINGS Rating Symbol Total Power Dissipation on FR−5 Board, (Note 1) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA PD Max Unit 225 1.8 556 mW mW/°C °C/W mW mW/°C °C/W °C Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient RqJA 300 2.4 417 Junction and Storage Temperature Range TJ, Tstg −65 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF Parameter Symbol QVZ I VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz http://onsemi.com 2 V BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4LT1G Z11 2.2 2.4 2.6 BZX84C2V7LT1G Z12 2.5 2.7 2.9 BZX84C3V0LT1G Z13 2.8 3 BZX84C3V3LT1G Z14 3.1 BZX84C3V6LT1G Z15 3.4 BZX84C3V9LT1G Z16 BZX84C4V3LT1G BZX84C4V7LT1/T3G VZ2 (V) @ IZT2 = 1 mA (Note 3) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.6 3.8 90 3.7 3.9 4.1 W9 4 4.3 Z1 4.4 4.7 BZX84C5V1LT1/T3G Z2 4.8 BZX84C5V6LT1/T3G Z3 5.2 BZX84C6V2LT1/T3G Z4 BZX84C6V8LT1/T3G BZX84C7V5LT1G VZ3 (V) @ IZT3 = 20 mA (Note 3) Min Max ZZT3 (W) @ IZT3 = 20 mA 600 2.6 3.2 50 600 3 3.6 50 2.7 600 3.3 3.9 2.3 2.9 600 3.6 2.7 3.3 600 3.9 90 2.9 3.5 600 4.6 90 3.3 4 5 80 3.7 4.7 5.1 5.4 60 4.2 5.3 5.6 6 40 4.8 6 5.8 6.2 6.6 10 5.6 Z5 6.4 6.8 7.2 15 Z6 7 7.5 7.9 15 BZX84C8V2LT1G Z7 7.7 8.2 8.7 BZX84C9V1LT1/T3G Z8 8.5 9.1 BZX84C10LT1G Z9 9.4 10 BZX84C11LT1G Y1 10.4 11 BZX84C12LT1G Y2 11.4 BZX84C13LT1G Y3 12.4 BZX84C15LT1/T3G Y4 BZX84C16LT1G BZX84C18LT1/T3G Max Reverse Leakage Current qVZ (mV/k) @ IZT1 = 5 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 50 1 −3.5 0 450 20 1 −3.5 0 450 50 10 1 −3.5 0 450 4.2 40 5 1 −3.5 0 450 4.5 40 5 1 −3.5 0 450 4.1 4.7 30 3 1 −3.5 −2.5 450 600 4.4 5.1 30 3 1 −3.5 0 450 500 4.5 5.4 15 3 2 −3.5 0.2 260 480 5 5.9 15 2 2 −2.7 1.2 225 400 5.2 6.3 10 1 2 −2.0 2.5 200 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device* VZ1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 mA VZ3 Below @ IZT3 = 10 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 BZX84C47LT1G Y16 44 47 50 170 43.7 50 BZX84C51LT1G Y17 48 51 54 180 47.6 BZX84C56LT1G Y18 52 56 60 200 51.5 BZX84C62LT1G Y19 58 62 66 215 BZX84C68LT1G Y20 64 68 72 BZX84C75LT1G Y21 70 75 79 Device* IR mA @ Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 37.1 41.5 70 0.05 27.3 33.4 41.2 45 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Include SZ-prefix devices where applicable. http://onsemi.com 3 IR mA @ BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Device Device Marking VZ (Volts) @ IZT = 5 mA (Note 4) Max Reverse Leakage Current ZZT (W) @ IZT = 5 mA (Note 4) IR mA Min Nom Max Max @ qVZ (mV/k) @ IZT = 5 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz VR BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260 BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225 BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200 BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185 BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155 BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140 BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 BZX84B9V1LT1G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130 BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130 BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110 BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85 BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Device* BZX84B27LT1G Device Marking T27 VZ (Volts) @ IZT = 2 mA (Note 4) ZZT (W) @ IZT = 2 mA (Note 4) Min Nom Max Max 26.5 27 27.5 80 *Include SZ-prefix devices where applicable. http://onsemi.com 4 Max Reverse Leakage Current IR mA 0.05 @ qVZ (mV/k) @ IZT = 2 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz 18.9 21.4 25.3 70 VR BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 5 1.1 1.2 BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (μA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25°C 0.0001 -55°C 0.00001 0 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 6 90 BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BZX84C2V4LT1/D