IC IC SMD Type Product specification KI4920DY Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 ID 6.9 Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current 5.5 IDM Continuous Source Current (Diode Conduction) * TA = 25 Maximum Power Dissipation * IS PD Maximum Junction-to-Ambient* * Surface Mounted on FR4 Board, t http://www.twtysemi.com V A 40 1.7 2 A W 1.3 TA = 70 Operating Junction and Storage Temperature Range Unit TJ, Tstg -55 to 150 RthJA 62.5 /W 10 sec. [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KI4920DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS IDSS Zero Gate Voltage Drain Current On-State Drain Current * ID(on) Drain-Source On-State Resistance* rDS(on) Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = Min Typ Max 1 V 20 V 100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 25 VDS 20 5 V, VGS = 10 V nA A A VGS = 10 V, ID =6.9 A 0.02 0.025 0.035 VGS = 4.5 V, ID = 5.8 A 0.026 Forward Transconductance* gfs VDS = 15 V, ID = 6.9 A 25 Schottky Diode Forward Voltage* VSD IS = 1.7 A, VGS = 0 V Total Gate Charge Qg VDS = 15 V, VGS = 5V, ID = 6.9 A Total Gate Charge Qgt Gate-Source Charge Qgs S 1.2 VDS = 15 V, VGS = 10 V, ID = 6.9 A Unit V 15 23 nC 30 50 nC 7.5 nC Gate-Drain Charge Qgd 3.5 Turn-On Delay Time td(on) 12 20 ns VDD = 15 V, RL = 15 Ù 10 20 ns ID = 1 A, VGEN = 10 V, RG = 6 Ù 60 90 ns 15 30 ns 50 90 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 300 http://www.twtysemi.com s, duty cycle IF = 1.7 A, di/dt = 100 A/ s nC 2 %. [email protected] 4008-318-123 2 of 2