High Dynamic Range GaAs HBT Amplifier, 50 - 450 MHz Advanced MAAMSS0006 V 1A.00 Features n Greater than 40 dBm Output IP3 n Greater than 20 dBm P1dB n GaAs iHBT Technology n Chip Scale Leadless Package n Single Positive Supply Voltage Description M/A-COM’s MAAMSS0006 Amplifier is a high linearity and high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC in a 3mm plastic surface mount package. It is ideal for receiver and transmission applications due to its low noise figure and high OIP3. The MAAMSS0006 is particularly useful in applications requiring high linearity. Electrical Specifications: TA = 25°C, Z0 = 50Ω Parameter Test Conditions Frequency Units Min Typ Max Gain 50 - 450 MHz dB — 13 — Return Loss 50 - 450 MHz dB — 12 — Output IP3 50 - 450 MHz dBm — 40 — Output P1dB 50 - 450 MHz dBm — 24 — Supply Voltage 50 - 450 MHz V — 5 — Supply Current 50 - 450 MHz mA — 100 — 3mm FQFP-N Package This Advanced Data Sheet contains technical information about a product M/A-COM may introduce. Specifications subject to change prior to formal introduction. All measurements in a 50 Ohm System.