IC IC SMD Type Product specification KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25 *1 PD 2.5 W Power Dissipation Ta = 70 *1 PD 1.6 W Linear Derating Factor Gate-to-Source Voltage VGS Drain-Source Voltage 0.02 W/ 20 V VDS 30 Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 Junction-to-Ambient R JA 50 Junction-to-Drain Lead R JL 20 V /W /W Single Pulse Avalanche Energy*3 EAS 72 mJ Avalanche Current *2 IAR 12 A *1 Pulse width 400 s; duty cycle 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. *3 Starting TJ = 25 , L = 0.94mH,RG = 25 , IAS = 12A. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7805Z Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Min Max 30 VGS = 0V, ID = 250 A TJ Typ V 0.023 ID = 1mA,Reference to 25 Unit VGS = 10V, ID = 16A*1 5.5 VGS =4.5V, ID = 13A*1 7.0 V/ 44 m VGS(th) 1.35 2.25 V VDS = VGS, ID = 250 A Gate Threshold Voltage Coefficient -4.7 VGS(th) Forward Transconductance gfs Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage VDS = 15V, ID = 12A*1 64 S VDS = 24V, VGS = 0V 1.0 VDS = 24V, VGS = 0V, TJ = 125 150 VGS = 20V 100 VGS = -20V -100 Qg 18 Gate-to-Source Charge Qgs1 4.7 Gate-to-Source Charge Qgs2 Gate-to-Drain ("Miller") Charge Qgd 6.2 Qgodr 5.5 Total Gate Charge Gate Charge Overdrive ID = 12A,VDS = 15V,VGS = 4.5V,*1 Qsw Output Charge Qoss VDS = 16V, VGS = 0V 10 Turn-On Delay Time td(on) VDD = 15V 11 tr Turn-Off Delay Time td(off) Fall Time tf ID = 12A 10 VGS=4.5V 14 Clamped Inductive Load 3.7 Input Capacitance Ciss VGS = 0V 2080 Coss VDS = 15V 480 Reverse Transfer Capacitance Crss f= 1.0MHz 220 Body Diode) nA 27 nC 7.8 Output Capacitance Continuous Source Current A 1.6 Switch Charge (Qgs2 + Qgd) Rise Time mV/ ns pF IS 3.1 ISM 120 A Pulsed Source Current Body Diode) *2 1.0 V TJ = 25 , IF = 12A.VDD=15V 29 440 ns di/dt = 100A/ 20 30 nC Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *1 Pulse width 400 s; duty cycle TJ = 25 , IS = 12A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2of 2