IC IC SMD Type Product specification KRF7494 Features High frequency DC-DC converters Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating ID 5.2 Continuous Drain Current, VGS @ 10V,TA = 100 ID 3.7 Pulsed Drain Current*1 IDM 42 PD 3 Continuous Drain Current, VGS @ 10V,Ta = 25 Power Dissipation Ta = 25 *1 Linear Derating Factor Unit A W 0.02 W/ Gate-to-Source Voltage VGS 20 V Drain-Source Voltage VDS 150 V Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 Junction-to-Ambient R JA 50 /W 20 /W Junction-to-Drain Lead R JL Single Pulse Avalanche Energy*3 EAS 370 mJ Avalanche Current *2 IAR 3.1 A *1 Pulse width 400 s; duty cycle 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. *3 Starting TJ = 25 , L = 77mH,RG = 25 , IAS = 3.1A. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7494 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Min Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 3.1A*1 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.5 gfs VDS = 50V, ID = 5.2A*1 12 Forward Transconductance IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage 0.15 ID = 1mA,Reference to 25 35 1.0 250 VGS = 20V 100 VGS = -20V -100 ID = 3.1A 36 VDS = 75V 7.5 Gate-to-Drain ("Miller") Charge Qgd VGS = 10V,*1 13 Turn-On Delay Time td(on) VDD = 100V 15 tr ID = 3.1A 13 td(off) RG =6.5 36 tf VGS=10V 14 Input Capacitance Ciss VGS = 0V 1750 Output Capacitance Coss VDS = 25V 220 Reverse Transfer Capacitance Crss ƒ= 1.0MHz 100 Output Capacitance Coss VGS = 0V, VDS = 1.0V, f = 1.0MHz 870 Coss VGS = 0V, VDS = 120V, f= 1.0MHz 120 VGS = 0V, VDS = 0V to 120V 170 Effective Output Capacitance Continuous Source Current Coss eff. Body Diode) V VDS = 120V, VGS = 0V Qg Output Capacitance m 4.5 VDS = 120V, VGS = 0V, TJ = 125 Qgs Fall Time V/ 44 S Gate-to-Source Charge Turn-Off Delay Time Unit V Total Gate Charge Rise Time Max 150 VGS = 0V, ID = 250 A TJ Typ A nA 54 nC ns pF IS 2.7 ISM 42 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD Reverse Recovery Time trr 1.3 TJ = 25 , IS = 3.1A, VGS = 0V*1 V TJ = 25 , IF = 3.1A.VDD=25V 55 ns 140 nC Reverse RecoveryCharge Qrr di/dt = 100A/ Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *1 Pulse width 400µs; duty cycle s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2of 2