IC MOSFET e SMD Type SMDType DIP Type IC MOSFET Product specification KX020N06 SOT- 89 Unit:mm 1.50 ±0.1 4.50±0.1 ■ Features 1.80±0.1 2.50±0.1 4.00±0.1 ● V DS (V) = 60V ● ID = 2 A (VGS = 10V) 0.53±0.1 ● RDS(ON) ＜ 340mΩ (VGS = 4V) 3.00±0.1 DRAIN 3 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 ● RDS(ON) ＜ 280mΩ (VGS = 4.5V) 0.40±0.1 ● RDS(ON) ＜ 200mΩ (VGS = 10V) 1 Gate 2 Drain 3 Source ∗2 GATE ∗1 SOURCE ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VD S 60 Gate-Source Voltage VGS ±２０ ID ±2 Pulsed Drain Current I DM ±8 Power Dissipation PD Continuous Drain Current 500 Unit V A W 2 Thermal Resistance.Junction- to-Ambient RthJA 250 Thermal Resistance.Junction- to-Case Rthc 62.5 TJ , TSTG -55 to 150 Junction and Storage Temperature Range http://www.twtysemi.com [email protected] ℃/W ℃ 4008-318-123 1 of 2 IC MOSFET MOSFET IC IC MOSFET e SMD Type SMD Type DIP Type Product specification KX020N06 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Testconditons VDSS ID=1mA, V GS=0V IDSS VDS =60V, V GS =0V IGSS VDS =0V, VGS(th) RDS(On) Min Typ 60 VGS =±20V VDS =10V ID=1mA 1.0 2.5 V 200 VGS=4.5V, ID=2A 200 280 VGS=4V, I D=2A 240 340 Cos s Reverse Transfer Capacitance C rs s 40 Total Gate Charge Qg 7.0 Gate Source Charge Q gs mΩ 140 VGS=0V, V DS =10V, f=1MHz pF 50 VGS=10V, VDS =30V, ID=2A 14 nC 1 Gate Drain Charge Q gd 2 Turn-On DelayTime td(on) 7.0 Turn-On Rise Time tr Turn-Off DelayTime td(off) http://www.twtysemi.com μA μA 150 Output Capacitance VGS=10V, VDS =30V, RL =30Ω,RGEN=10Ω , I D=1A tf VSD 1 ± 10 VGS=10V, ID=2A Ciss Diode Forward Voltage Unit V Input Capacitance Turn-Off Fall Time Max 10 ns 22 18 IS=2A,V GS =0V [email protected] 1.2 4008-318-123 V 2 of 2